HMS2M32M16G-17

HANBit HAN BIT HMS2M32M16G SRAM MODULE 8Mbyte (2M x 32-Bit) Part No. HMS2M32M16G GENERAL DESCRIPTION The HMS2M32M16G is a high-speed static random access memory (SRAM) module containing 2,097,152 words organized in a x32-bit configuration. The module consists of sixteen 1M x 4 SRAMs mounted on a 72-pin, double-sided, FR4-printed circuit board. PD0 to PD3 identify the module’s density allowing interchangeable use of alternate density, industry- standard modules. Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes independently. Output enable (/OE) and write enable(/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW. For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible. FEATURES Š Access times: 10, 12, 15, 17 and 20ns Š High-density 8MByte design Š High-reliability, high-speed design Š Single + 5V ±10% power supply Š Easy memory expansion /CE and /OE functions Š All inputs and outputs are TTL-compatible Š Industry-standard pinout Š FR4-PCB design Š Low profile 72-pin Š Part identification - HMS2M32M16G : SIMM Design, Gold Lead NC NC PD2 PD3 Vss PD0 PD1 DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 Vcc A0 A7 A1 A8 A2 A9 DQ12 DQ4 DQ13 DQ5 DQ14 DQ6 DQ15 DQ7 Vss /WE A15 A14 /CE2 /CE1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 PIN ASSIGNMENT /CE4 /CE3 A17 A16 /OE Vss DQ24 DQ16 DQ25 DQ17 DQ26 DQ18 DQ27 DQ19 A3 A10 A4 A11 A5 A12 Vcc A13 A6 DQ20 DQ28 DQ21 DQ29 DQ22 DQ30 DQ23 DQ31 Vss A18 A19 A20 NC 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 OPTIONS Š Timing 10ns access 12ns access 15ns access 17ns access 20ns access MARKING -10 -12 -15 -17 -20 M Š Packages 72-pin SIMM 72-PIN SIMM TOP VIEW HANBit Electronics Co.,Ltd. HANBit FUNCTIONAL BLOCK DIAGRAM DQ0 – DQ31 A0 – A19 A0-A19 /WE U1 DQ0-3 /OE /CE /CE11 A0-A19 /WE U2 DQ4-7 /OE /CE HMS2M32M16G /CE01 A0-A19 /WE U9 DQ0-3 /OE /CE A0-A19 /WE U10 DQ4-7 /OE /CE A0-A19 /WE U3 DQ8-11 /OE /CE /CE02 A0-A19 /WE U4 DQ12-15 /OE /CE /CE12 A0-A19 /WE U11 DQ8-11 /OE /CE A0-A19 /WE U12 DQ12-15 /OE /CE A-A19 /WE /CE03 /OE U5 DQ16-19 /CE /CE13 A0-A19 /WE U13 DQ16-19 /OE /CE A0-A19 /WE U6 DQ20-23 /OE /CE A0-A19 /WE U14 DQ20-23 /OE /CE A0-A19 /WE U7 DQ24-27 /OE /CE /CE04 A0-A19 /WE U8 DQ28-31 /OE /CE /OE /WE /CE14 A0-A19 /WE U15 DQ24-27 /OE /CE A0-A19 /WE U16 DQ28-31 /OE /CE HANBit Electronics Co.,Ltd. HANBit A(20) HMS2M32M16G 74F04 74F32 74F32 74F32 74F32 74F32 /CE3 74F32 74F32 74F32 /LCE1 /HCE1 /LCE2 /HCE2 /LCE3 /HCE3 /LCE4 /HCE4 /CE1 /CE2 /CE4 TRUTH TABLE MODE STANDBY NOT SELECTED READ WRITE /OE X H L X /CE H L L L /WE X H H L OUTPUT HIGH-Z HIGH-Z DOUT DIN POWER STANDBY ACTIVE ACTIVE ACTIVE HANBit Electronics Co.,Ltd. HANBit ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to Vss Power Dissipation Storage Temperature SYMBOL VIN,OUT VCC PD TSTG HMS2M32M16G RATING -0.5V to +7.0V -0.5V to +7.0V 16W -65oC to +150oC Operating Temperature TA 0oC to +70oC Š Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER Supply Voltage Ground Input High Voltage Input Low Voltage * SYMBOL VCC VSS VIH VIL MIN 4.5V 0 2.2 -0.5* ( TA=0 to 70 o C ) TYP. 5.0V 0 MAX 5.5V 0 Vcc+0.5V** 0.8V VIL(Min.) = -2.0V ac (Pulse Width ≤ 10ns) for I ≤ 20 mA ** VIH(Min.) = Vcc+2.0V ac (Pulse Width ≤ 10ns) for I ≤ 20 mA DC AND OPERATING CHARACTERISTICS (1) (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage * Vcc=5.0V, Temp=25 oC TEST CONDITIONS VIN =Vss =Vcc /CE=VIH or /OE =VIH or /WE=VIL VOUT=Vss to VCC IOH = -4.0Ma IOL = 8.0Ma SYMBO L ILI IL0 VOH VOL MIN -2 -2 2.4 0.4 MAX 2 2 UNITS µA µA V V DC AND OPERATING CHARACTERISTICS (2) MAX DESCRIPTION Power Supply Current: Operating Power Supply Current :Standby TEST CONDITIONS Min. Cycle, 100% Duty /CE=VIL, VIN=VIH or VIL, IOUT=0mA Min. Cycle, /CE=VIH f=0MHZ, /CE≥VCC-0.2V, VIN≥ VCC-0.2V or VIN≤0.2V SYMBOL lCC lSB lSB1 -10 195 50 10 -12 190 50 10 -15 185 50 10 UNIT mA mA mA HANBit Electronics Co.,Ltd. HANBit CAPACITANCE DESCRIPTION Input /Output Capacitance Input Capacitance TEST CONDITIONS VI/O=0V VIN=0V SYMBOL CI/O CIN HMS2M32M16G MAX 8 7 UNIT pF pF * NOTE : Capacitance is sampled and not 100% tested AC CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V, unless otherwise specified) TEST CONDITIONS PARAMETER Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Output Load VALUE 0 to 3V 3ns 1.5V See below Output Load (A) VL=1.5V 50Ω DOUT Z0=50Ω 30pF DOUT 255Ω Output Load (B) for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ +5.0V 480Ω 5pF* READ CYCLE -10 PARAMETER Read Cycle Time Address Access Time Chip Select to Output Output Enable to Output Chip Enable to Low-Z Output Output Enable to Low-Z Output Output Disable to High-Z Output Chip Disable to High-Z Output Output Hold from Address Change Chip Select to Power Up Time Chip Select to Power Down Time SYMBOL MIN MAX MIN MAX MIN MAX -12 -15 UNIT tRC tAA tCO tOE tLZ tOLZ tOHZ tHZ tOH tPU tPD 10 3 0 0 0 3 0 - 10 10 5 5 5 10 12 3 0 0 0 3 0 12 12 6 6 6 12 15 3 0 0 0 3 0 - 15 15 7 7 7 15 ns ns ns ns ns ns ns ns ns ns ns HANBit Electronics Co.,Ltd. HANBit HMS2M32M16G WRITE CYCLE -10 PARAMETER Write Cycle Time Chip Select to End of Write Address Set-up Time Address Valid to End of Write Write Pulse Width (/OE High) Write Recovery Time Write to Output High-Z Data to Write Time Overlap Data Hold from Write Time End of Write to Output Low-Z SYMBOL MIN MAX MIN MAX MIN MAX -12 -15 UNIT tWC tCW tAS tAW tWP tWR tWHZ tDW tDH tOW 10 7 0 7 7 0 0 5 0 3 5 - 12 8 0 8 8 0 0 6 0 3 6 - 15 10 0 10 10 0 0 7 0 3 7 - ns ns ns ns ns ns ns ns ns ns TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE( Address Controlled)( /CE =/OE = VIL , /WE = VIH) tRC Address tAA tOH Data out Previous Data Valid Data Valid HANBit Electronics Co.,Ltd. HANBit TIMING WAVEFORM OF READ CYCLE ( /WE = VIH ) tRC Address tAA /CE tLZ(4,5) /OE tOLZ Data Out Vcc Supply Current High-Z Data Valid HMS2M32M16G tHZ(3,4,5) tCO tOHZ tOE tOH lCC lSB tPU 50% tPD 50% Notes (Read Cycle) 1. /WE is high for read cycle. 2. All read cycle timing is referenced from the last valid address to first transition address. 3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or VOL levels. 4. At any given temperature and voltage condition, tHZ (max.) is less than tLZ (min.) both for a given device and from device to device. 5. Transition is measured ± 200mV from steady state voltage with Load (B). This parameter is sampled and not 100% tested. 6. Device is continuously selected with /CE = VIL. 7. Address valid prior to coincident with /CE transition low. TIMING WAVEFORM OF WRITE CYCLE (/OE = Clock ) tWC Address tAW tWR(5) /OE tCW(3) /CE tAS(4) tWP(2) /WE tDW tDH Data Valid tOHZ tOW High-Z High-Z Data In Data Out HANBit Electronics Co.,Ltd. HANBit TIMING WAVEFORM OF WRITE CYCLE (/OE Low Fixed) tWC HMS2M32M16G Address tAW tCW(3) tWR(5) /CE tAS(4) tOH tWP(2) tDW tDH Data Valid tWHZ(6,7) tOW High-Z(8) (10) (9) /WE Data In High-Z Data Out Notes(Write Cycle) 1. All write cycle timing is referenced from the last valid address to the first transition address. 2. A write occurs during the overlap of a low /CE and a low /WE. A write begins at the latest transition among /CE going low and /WE going low: A write ends at the earliest transition among /CE going high and /WE going high. tWP is measured from the beginning of write to the end of write. 3. tCW is measured from the later of /CE going low to the end of write. 4. tAS is measured from the address valid to the beginning of write. 5. tWR is measured from the end of write to the address change. tWR applied in case a write ends as /CE, or /WE going high. 6. If /OE,/CE and /WE are in the read mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase of the output must not be applied because bus contention can occur. 7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle. 8. If /CE goes low simultaneously with /WE going low or after /WE going low, the outputs remain high impedance state. 9. DOUT is the read data of the new address. 10. When /CE is low: I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be applied. FUNCTIONAL DESCRIPTION /CE H L L L Note: X means Don't /WE X* H H L /OE X H L X MODE Not Select Output Disable Read Write I/O PIN High-Z High-Z DOUT DIN SUPPLY CURRENT I SB, I SB1 ICC ICC ICC HANBit Electronics Co.,Ltd. HANBit HMS2M32M16G PACKAGE DIMMENSIONS SIMM Design 1 07.95 mm .125 (3.18) T YP(2x) 3 .38 mm 27.0 mm 1 0.16 mm 1 10.16 mm 72 2 .0 mm 1 .02 mm 6 .35 mm 1 .27 mm 3.38 mm 6.35 mm 9 5.25 mm 6.35 mm 0.25 mm MAX 2.54 mm M IN Gold: 1.04 ± 0.10 mm 1.27 Solder: 0.914 ± 0.10 mm 1.29 ± 0 .08mm (Solder & Gold Plating Lead) HANBit Electronics Co.,Ltd. HANBit HMS2M32M16G ORDERING INFORMATION 1 2 3 4 5 6 7 8 HMS HANBit Memory Modules SRAM 2M 32 M 16G - 15 15ns Access Time Component, Gold SIMM x32bit 2M 1. - Product Line Identifier HANBit ------------------------------------------------------- H 2. - Memory Modules 3. - SRAM 4. - Depth : 2M 5. - Width : x 32bit 6. - Package Code SIMM ------------------------------------------------------- M 7. - Number of Memory Components –16, Lead finish Gold -- G 8. - Access time 10 ----------------------------------------------------------- 10ns 12 ----------------------------------------------------------- 12ns 15 ----------------------------------------------------------- 15ns 17 ----------------------------------------------------------- 17ns 20 ----------------------------------------------------------- 20ns HANBit Electronics Co.,Ltd.