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HA3-2839-5

HA3-2839-5

  • 厂商:

    HARRIS

  • 封装:

  • 描述:

    HA3-2839-5 - 600MHz, Very High Slew Rate Operational Amplifier - Harris Corporation

  • 数据手册
  • 价格&库存
HA3-2839-5 数据手册
Semiconductor DUC PRO 9 ETE 53 SOL e HA-2 OB Se T HA-2839 600MHz, Very High Slew Rate Operational Amplifier November 1996 Features • Low Supply Current. . . . . . . . . . . . . . . . . . . . . . . . 13mA • Very High Slew Rate . . . . . . . . . . . . . . . . . . . . . 625V/µs • Open Loop Gain . . . . . . . . . . . . . . . . . . . . . . . . . . 25kV/V • Wide Gain-Bandwidth (AV ≥ 10) . . . . . . . . . . . . 600MHz • Full Power Bandwidth . . . . . . . . . . . . . . . . . . . . . 10MHz • Low Offset Voltage. . . . . . . . . . . . . . . . . . . . . . . . .0.6mV • Differential Gain/Phase . . . . . . . . . 0.03%/0.03 Degrees • Enhanced Replacement for EL2039 Description The HA-2839 is a wideband, very high slew rate, operational amplifier featuring superior speed and bandwidth characteristics. Bipolar construction, coupled with dielectric isolation, delivers outstanding performance in circuits with a closed loop gain of 10 or greater. A 625V/µs slew rate and a 600MHz gain bandwidth product ensure high performance in video and RF amplifier designs. Differential gain and phase are a low 0.03% and 0.03 degrees respectively, making the HA-2839 ideal for video applications. A full ±10V output swing, high open loop gain, and outstanding AC parameters, make the HA-2839 an excellent choice for high speed Data Acquisition Systems. The HA-2839 is available in commercial and industrial temperature ranges, and a choice of packages. For military grade product, refer to the HA-2839/883 data sheet. Applications • Pulse and Video Amplifiers • Wideband Amplifiers • High Speed Sample-Hold Circuits • RF Oscillators Part Number Information PART NUMBER HA1-2839-5 HA3-2839-5 HA3-2839-9 TEMP. RANGE (oC) 0 to 75 0 to 75 -40 to 85 PACKAGE 14 Ld CERDIP 14 Ld PDIP 14 Ld PDIP PKG. NO. F14.3 E14.3 E14.3 Pinout HA-2839 (CERDIP, PDIP) TOP VIEW +IN 1 NC 2 V- 3 NC 4 NC 5 NC 6 NC 7 + 14 -IN - 13 NC 12 NC 11 NC 10 V+ 9 NC 8 OUT NOTE: No Connection (NC) pins may be tied to a ground plane for better isolation and heat dissipation. CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright © Harris Corporation 1996 File Number 2841.3 3-1 HA-2839 Absolute Maximum Ratings Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 35V Differential Input Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Thermal Information Thermal Resistance (Typical, Note 2) θJA (oC/W) θJC (oC/W) CERDIP Package . . . . . . . . . . . . . . . . 95 40 PDIP Package . . . . . . . . . . . . . . . . . . . 80 N/A Maximum Internal Quiescent Power Dissipation (Note 1) Maximum Junction Temperature (Ceramic Package) . . . . . . . . . 175oC Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC Operating Conditions Temperature Range HA-2839-5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to 75oC HA-2839-9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC Recommended Supply Voltage Range. . . . . . . . . . . . . ±7V to ±15V CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Maximum power dissipation with load conditions must be designed to maintain the maximum junction temperature below 175oC for ceramic packages and below 150oC for plastic packages. 2. θJA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications VSUPPLY = ±15V, RL = 1kΩ, CL ≤ 10pF, Unless Otherwise Specified HA-2839-5, -9 PARAMETER INPUT CHARACTERISTICS Offset Voltage (Note 13) TEMP. (oC) MIN TYP MAX UNITS 25 Full ±10 - 0.6 2 20 5 8 1 10 1 6 6 2 6 14.5 20 4 8 - mV mV µV/oC µA µA µA µA kΩ pF V nV ⁄ Hz pA ⁄ Hz Average Offset Voltage Drift Bias Current (Note 13) Full 25 Full Offset Current 25 Full Input Resistance Input Capacitance Common Mode Range Input Noise Voltage (f = 1kHz, RSOURCE = 0Ω, Note 13) Input Noise Current (f = 1kHz, RSOURCE = 10kΩ, Note 13) TRANSFER CHARACTERISTICS Large Signal Voltage Gain (Note 3) 25 25 Full 25 25 25 Full 20 15 75 10 - 25 20 80 600 - kV/V kV/V dB V/V MHz Common-Mode Rejection Ratio (Notes 4, 13) Minimum Stable Gain Gain Bandwidth Product (Notes 5, 12, 13) OUTPUT CHARACTERISTICS Output Voltage Swing (Notes 3, 13) Output Current (Notes 3, 13) Output Resistance Full Power Bandwidth (Notes 3, 7) Differential Gain (Notes 6, 11) Differential Phase (Notes 6, 11) Harmonic Distortion (Notes 6, 13, 14) Full 25 25 Full Full 25 25 25 25 25 ±10 ±10 8.7 - ±20 30 10 0.03 0.03 -79 - V mA Ω MHz % Degrees dBc 3-2 HA-2839 Electrical Specifications VSUPPLY = ±15V, RL = 1kΩ, CL ≤ 10pF, Unless Otherwise Specified (Continued) HA-2839-5, -9 PARAMETER TRANSIENT RESPONSE (Note 8) Rise Time Overshoot Slew Rate (Notes 3, 10, 13) Settling Time: 10V Step to 0.1% POWER REQUIREMENTS Supply Current (Note 13) Power Supply Rejection Ratio (Notes 9, 13) NOTES: 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. RL = 1kΩ, VO = ±10V, 0V to ±10V for slew rate. VCM = ±10V. VO = 90mV. AV = +10. Full Full 75 13 90 15 mA dB 25 25 25 25 550 4 20 625 180 ns % V/µs ns TEMP. (oC) MIN TYP MAX UNITS Slew Rate Full Power Bandwidth guaranteed based on slew rate measurement using: FPBW = --------------------------- , V = 10V . 2 π V PEAK PEAK Refer to Test Circuit section of data sheet. VSUPPLY = ±10V to ±20V. This parameter is not tested. The limits are guaranteed based on lab characterization, and reflect lot-to-lot variation. Differential gain and phase are measured with a VM700A video tester, using a NTC-7 composite VITS. AV = +100. See “Typical Performance Curves” for more information. VO = 2VP-P, f = 1MHz. Test Circuit and Waveforms IN + - OUT 900Ω NOTES: 15. VS = ±15V. 16. AV = +10. 17. CL < 10pF. 100Ω TEST CIRCUIT INPUT INPUT OUTPUT OUTPUT Input = 1V/Div.; Output = 5V/Div., 50ns/Div. LARGE SIGNAL RESPONSE Input = 10mV/Div.; Output = 100mV/Div.; 50ns/Div. SMALL SIGNAL RESPONSE 3-3 HA-2839 Test Circuit and Waveforms V+ 0.001µF (Continued) NOTES: 18. AV = -10. 200Ω INPUT 1µF 19. Load Capacitance should be less than 10pF. OUTPUT + 0.001µF 20. It is recommended that resistors be carbon composition and that feedback and summing network ratios be matched to 0.1%. 21. SETTLING POINT (Summing Node) capacitance should be less than 10pF. For optimum settling time results, it is recommended that the test circuit be constructed directly onto the device pins. A Tektronix 568 Sampling Oscilloscope with S-3A sampling heads is recommended as a settle point monitor. PROBE MONITOR 500Ω V- 1µF 2kΩ SETTLING POINT 5kΩ SETTLING TIME TEST CIRCUIT Typical Performance Curves 100 GAIN (dB) 80 60 40 20 AVCL = 1000 AVCL = 100 OPEN LOOP TA = 25oC, VSUPPLY = ±15V, RL = 1kΩ, CL < 10pF, Unless Otherwise Specified 650 GAIN BANDWIDTH PRODUCT (MHz) 600 AVCL = 10 0 90 PHASE (DEGREES) 0 550 OPEN LOOP 1K 10K 100K 1M 10M 100M 180 500 5 6 7 8 9 10 11 12 13 14 15 SUPPLY VOLTAGE (±V) FREQUENCY (Hz) FIGURE 1. FREQUENCY RESPONSE FOR VARIOUS GAINS FIGURE 2. GAIN BANDWIDTH PRODUCT vs SUPPLY VOLTAGE 750 GAIN BANDWIDTH PRODUCT (MHz) 90 80 70 CMRR (dB) -40 -20 0 20 40 60 80 100 120 140 650 550 60 50 40 450 350 30 250 -60 20 100 TEMPERATURE (oC) 1K 10K 100K 1M 10M FREQUENCY (Hz) FIGURE 3. GAIN BANDWIDTH PRODUCT vs TEMPERATURE FIGURE 4. CMRR vs FREQUENCY 3-4 HA-2839 Typical Performance Curves 110 100 90 80 PSRR (dB) 70 60 50 40 30 20 10 0 100 1K 10K 100K 1M 10M 30 NOISE VOLTAGE (nV/√Hz) 37.5 NOISE CURRENT (pA/√Hz) 15 15 ±PSRR TA = 25oC, VSUPPLY = ±15V, RL = 1kΩ, CL < 10pF, Unless Otherwise Specified (Continued) 50 20 NOISE CURRENT NOISE VOLTAGE 25 10 12.5 0 10 100 1K FREQUENCY (Hz) 10K 0 100K FREQUENCY (Hz) FIGURE 5. PSRR vs FREQUENCY FIGURE 6. INPUT NOISE vs FREQUENCY 750 700 SLEW RATE (V/µs) SLEW RATE (V/µs) 700 650 600 650 550 600 500 550 -60 450 -40 -20 0 20 40 60 80 100 120 140 5 6 7 8 9 10 11 12 13 14 TEMPERATURE (oC) SUPPLY VOLTAGE (±V) FIGURE 7. SLEW RATE vs TEMPERATURE FIGURE 8. SLEW RATE vs SUPPLY VOLTAGE 8.0 3.5 INPUT BIAS CURRENT (µA) 7.0 2.5 6.0 BIAS CURRENT OFFSET VOLTAGE 5.0 0.5 4.0 -0.5 3.0 -60 1.5 INPUT OFFSET VOLTAGE (mV) 14 SUPPLY CURRENT (mA) 12 -55oC 125oC 25oC 10 8 6 -40 -20 0 20 40 60 80 100 120 140 5 6 7 8 9 10 11 12 13 14 TEMPERATURE (oC) SUPPLY VOLTAGE (±V) FIGURE 9. INPUT OFFSET VOLTAGE AND INPUT BIAS CURRENT vs TEMPERATURE FIGURE 10. SUPPLY CURRENT vs SUPPLY VOLTAGE 3-5 HA-2839 Typical Performance Curves 15 POSITIVE OUTPUT SWING (V) ±15V, 1kΩ OUTPUT SWING (V) -5 TA = 25oC, VSUPPLY = ±15V, RL = 1kΩ, CL < 10pF, Unless Otherwise Specified (Continued) -2.5 ±8V, 75Ω ±8V, 150Ω ±8V, 1kΩ ±15V, 75Ω 12.5 10 ±15V, 150Ω ±15V, 75Ω ±8V, 1kΩ 7.5 5 -7.5 ±15V, 150Ω -10 ±15V, 1kΩ 2.5 0 -60 ±8V, 150Ω -40 -20 0 20 40 60 80 100 ±8V, 75Ω 120 140 -12.5 -60 -40 -20 0 20 40 60 80 100 120 140 TEMPERATURE (oC) TEMPERATURE (oC) FIGURE 11. POSITIVE OUTPUT SWING vs TEMPERATURE FIGURE 12. NEGATIVE OUTPUT SWING vs TEMPERATURE 25 OUTPUT VOLTAGE SWING (VP-P) 20 15 10 5 0 VSUPPLY = ±8V THD (dBc) -35 VSUPPLY = ±15V -45 -55 -65 -75 VO = 10VP-P VO = 0.5VP-P VO = 1VP-P 1M FREQUENCY (Hz) 10M -85 VO = 2VP-P 1K 10K 100K 1M 10M 100M 100K FREQUENCY (Hz) FIGURE 13. MAXIMUM UNDISTORTED OUTPUT SWING vs FREQUENCY FIGURE 14. TOTAL HARMONIC DISTORTION vs FREQUENCY -35 THIRD INTERMOD PRODUCT (dBc) VO = 0.5VP-P -45 VO = 2VP-P -55 -65 -75 -85 -95 500K VO = 5VP-P VO = 1VP-P VO = 0.25VP-P 1M FREQUENCY (Hz) 10M FIGURE 15. INTERMODULATION DISTORTION vs FREQUENCY (TWO TONE) 3-6 HA-2839 Die Characteristics DIE DIMENSIONS: 65 mils x 52 mils x 19 mils 1650µm x 1310µm x 483µm METALLIZATION: Type: Aluminum, 1% Copper Thickness: 16kÅ ±2kÅ SUBSTRATE POTENTIAL VPASSIVATION: Type: Nitride over Silox Silox Thickness: 12kÅ ±2kÅ Nitride thickness: 3.5kÅ ±1kÅ TRANSISTOR COUNT: 34 PROCESS: High Frequency Bipolar Dielectric Isolation Metallization Mask Layout HA-2839 V+ OUT -IN +IN V- 3-7
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