HGTG30N60C3D

SEMICONDUCTOR HGTG30N60C3D 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Package JEDEC STYLE TO-247 E C G August 1995 Features • • • • • 63A, 600V at TC = +25 C Typical Fall Time - 230ns at TJ = +150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode o Description The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. PACKAGING AVAILABILITY PART NUMBER HGTG30N60C3D PACKAGE TO-247 BRAND G30N60C3D E Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G NOTE: When ordering, use the entire part number. Formerly Developmental Type TA49014. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTG30N60C3D 600 63 30 25 252 ±20 ±30 60A at 600V 208 1.67 -40 to +150 260 4 15 UNITS V A A A A V V W W/oC oC oC µs µs Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = +110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Average Diode Forward Current at +110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG) Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = +125oC, RGE = 25Ω. HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1995 File Number 4041 1 Specifications HGTG30N60C3D Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250µA, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES VCE = BVCES Collector-Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15V IC = 250µA, VCE = VGE VGE = ±20V TJ = +150oC, VGE = 15V, RG = 3Ω, L = 100µH VCE(PK) = 480V VCE(PK) = 600V TC = +25oC TC = +150oC TC = +25oC TC = +150oC TC = +25oC MIN 600 15 3.0 TYP 25 1.5 1.7 5.2 MAX 250 3.0 1.8 2.0 6.0 ±100 UNITS V V µA mA V V V Gate-Emitter Threshold Voltage VGE(TH) IGES SSOA Gate-Emitter Leakage Current Switching SOA 200 60 - nA A A Gate-Emitter Plateau Voltage On-State Gate Charge VGEP QG(ON) IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20V - 8.1 162 216 40 45 320 230 1050 2500 1.75 52 42 - 180 250 400 275 2.2 60 50 0.6 1.3 V nC nC ns ns ns ns µJ µJ V ns ns oC/W oC/W Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 1) Diode Forward Voltage Diode Reverse Recovery Time tD(ON)I tRI tD(OFF)I tFI EON EOFF VEC tRR TJ = +150oC, ICE = IC110, VCE(PK) = 0.8 BVCES, VGE = 15V, RG = 3Ω, L = 100µH IEC = 30A IEC = 30A, dIEC/dt = 100A/µs IEC = 1.0A, dIEC/dt = 100A/µs - Thermal Resistance RθJC IGBT Diode NOTE: 1. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTG30N60C3D was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TurnOn losses include diode losses. 2 HGTG30N60C3D Typical Performance Curves ICE, COLLECTOR-EMITTER CURRENT (A) 150 125 100 TC = +150oC 75 TC = +25 C 50 25 0 4 TC = -40oC o ICE, COLLECTOR-EMITTER CURRENT (A) PULSE DURATION = 250µs DUTY CYCLE