IRF510

Semiconductor IRF510, IRF511, IRF512, IRF513 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17441. January 1998 Features • 4.9A, and 5.6A, 80V and 100V • rDS(ON) = 0.54Ω and 0.74Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF510 IRF511 IRF512 IRF513 PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB BRAND IRF510 IRF511 IRF512 IRF513 G S NOTE: When ordering, include the entire part number. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 File Number 1573.2 5-1 IRF510, IRF511, IRF512, IRF513 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF510 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS Operating and Storage Temperature Range. . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from 25ase for 10s . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . .Tpkg 100 100 5.6 4 20 ±20 43 0.29 19 -55 to 175 300 260 IRF511 80 80 5.6 4 20 ±20 43 0.29 19 -55 to 175 300 260 IRF512 100 100 4.9 3.4 18 ±20 43 0.29 19 -55 to 175 300 260 IRF513 80 80 4.9 3.4 18 ±20 43 0.29 19 -55 to 175 300 260 UNITS V V A A A V W W/oC mJ oC oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS VGS = 0V, ID = 250µA, (Figure 10) 100 80 VGS(TH) IDSS VGS = VDS, ID = 250µA VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V TJ = 150oC 2.0 4.0 25 250 V V V µA µA MIN TYP MAX UNITS Drain to Source Breakdown Voltage IRF510 IRF512 IRF511, IRF513 Gate to Threshold Voltage Zero-Gate Voltage Drain Current On-State Drain Current (Note 2) IRF510, IRF511 IRF512, IRF513 Gate to Source Leakage Current Drain to Source On Resistance (Note 2) IRF510, IRF511 IRF512, IRF513 Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain “Miller” Charge ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V, (Figure 7) 5.6 4.9 - ±100 A A nA IGSS rDS(ON) VGS = ±20V VGS = 10V, ID = 3.4A, (Figures 8, 9) - gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd VGS = 10V, ID = 5.6A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA (Figures 14, 19, 20) Gate charge is essentially independent of operating temperature VGS = 50V, ID = 3.4A, (Figure 12) ID ≈ 5.6A, RGS = 24Ω , V = 50V, RL = 9Ω DD VDD = 50V, VGS = 10V, (Figures 17, 18) MOSFET switching times are essentially independent of operating temperature 1.3 - 0.4 0.5 2.0 8 25 15 12 5.0 0.54 0.74 11 36 21 21 7.7 Ω Ω S ns ns ns ns nC - 2.0 3.0 - nC nC 5-2 IRF510, IRF511, IRF512, IRF513 Electrical Specifications PARAMETER Input Capacitance Output Capacitance Reverse-Transfer Capacitance Internal Drain Inductance TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL CISS COSS CRSS LD Measured From the Contact Screw On Tab To Center of Die Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die Internal Source Inductance LS Measured From The Source Lead, 6mm (0.25in) From Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances D LD G LS S TEST CONDITIONS VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 11) MIN - TYP 135 80 20 3.5 MAX - UNITS pF pF pF nH - 4.5 - nH - 7.5 - nH Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RθJC RθJA Free air operation - - 3.5 80 oC/W oC/W Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM Test Conditions Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode D MIN - TYP - MAX 5.6 20 UNITS A A G S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge NOTES: VSD trr QRR TJ = 25oC, ISD = 5.6A, VGS = 0V (Figure 13) TJ = 25oC, ISD = 5.6A, dISD/dt = 100A/µs TJ = 25oC, ISD = 5.6A, dISD/dt = 100A/µs 4.6 0.17 96 0.4 2.5 200 0.83 V ns µC 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 25V, start TJ = 25oC, L = 910µH, RG = 25Ω, peak IAS = 5.6A (See Figure 15, 16). 5-3 IRF510, IRF511, IRF512, IRF513 Typical Performance Curves Unless Otherwise Specified 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 10 ID, DRAIN CURRENT (A) 8 6 IRF510, IRF511 4 IRF512, IRF513 2 0 125 50 75 100 TC , CASE TEMPERATURE (oC) 150 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 THERMAL IMPEDANCE (oC/W) ZθJC, TRANSIENT 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE PDM NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 0.01 10-5 10-4 10-3 10-2 0.1 1 10 t1 t2 t1, RECTANGULAR PULSE DURATION (S) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 100 ID, DRAIN CURRENT (A) 10 IRF512, 3 IRF510, 1 IRF512.3 ID, DRAIN CURRENT (A) IRF510, 1 OPERATION IN THIS REGION IS LIMITED BY rDS(ON) 10µs 100µs 1ms 10 VGS = 10V 80µs PULSE TEST 8 VGS = 8V 6 VGS = 7V 4 VGS = 6V 2 VGS = 5V 103 0 VGS = 4V 0 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) 1 TC = 25oC TJ = 175oC SINGLE PULSE 0.1 1 DC IRF511, 3 IRF510, 2 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 102 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 5-4 IRF510, IRF511, IRF512, IRF513 Typical Performance Curves Unless Otherwise Specified ID(ON), ON-STATE DRAIN CURRENT (A) 10 80µs PULSE TEST VGS = 10V ID, DRAIN CURRENT (A) 8 VGS = 8V 6 VGS = 7V 4 VGS = 6V 2 VGS = 5V 0 VGS = 4V 0 2 4 6 8 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 (Continued) 10 VDS ≥ 50V 80µs PULSE TEST 1 TJ = 175oC TJ = 25oC 0.1 10-2 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS 5.0 80µs PULSE TEST NORMALIZED ON RESISTANCE 3.0 ID = 3.4A VGS = 10V rDS(ON), DRAIN TO SOURCE 4.0 ON RESISTANCE (Ω) 2.4 3.0 1.8 2.0 VGS = 10V VGS = 20V 1.0 1.2 0.6 0 0 4 8 12 16 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250µA 500 VGS = 0V, f = 1MHz CISS = CGS + CGD 400 CRSS = CGD COSS ≈ CDS + CGD 300 1.05 0.95 C, CAPACITANCE (pF) 1.15 200 CISS COSS 0.85 100 CRSS 0.75 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0 1 2 TJ, JUNCTION TEMPERATURE (oC) 10 2 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 102 FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 5-5 IRF510, IRF511, IRF512, IRF513 Typical Performance Curves Unless Otherwise Specified 2.5 gfs, TRANSCONDUCTANCE (S) VDS ≥ 50V 80µs PULSE TEST TJ = 25oC (Continued) 100 ISD, SOURCE TO DRAIN CURRENT (A) 2.0 10 1.5 TJ = 175oC 1.0 1 TJ = 175oC 0.5 TJ = 25oC 0.1 0 0 0 2 4 6 ID, DRAIN CURRENT (A) 8 10 0.4 0.8 1.2 1.6 VSD, SOURCE TO DRAIN VOLTAGE (V) 2.0 FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 20 VGS, GATE TO SOURCE VOLTAGE (V) ID = 3.4A 16 VDS = 80V VDS = 50V VDS = 20V 12 8 4 0 0 2 4 6 8 Qg(TOT), TOTAL GATE CHARGE (nC) 10 FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 5-6 IRF510, IRF511, IRF512, IRF513 Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD + 0V IAS 0.01Ω 0 tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 17. SWITCHING TIME TEST CIRCUIT VDS (ISOLATED SUPPLY) FIGURE 18. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS 12V BATTERY 0.2µF 50kΩ 0.3µF G DUT 0 IG(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORM 5-7