510E850C

Hebei I.T. (Shanghai) Co., Ltd. LED SPECIFICATION Part No.：510E850C Ø Features： l Single color l High Power output l Low power consumption l High reliability and long life Ø Descriptions： l Dice material：AlGaAs l Emitting Color：Infrared Emitting diodes l Device Outline：φ5mm Round Type l Lens Type：Black Transparent Ø Directivity: N ote ： ● All dimensions are millimeters. ● Tolerance is +/-0.25mmunless otherivise noted DIRECTIVITY Relative Luminous Intensity 1.0 0° Ta=25° C IF=20mA 30° 0.5 60° 0 90° 60° 30° 0° 0.5 90° 1.0 Radiation Angle www.ledz.com 1/3 Hebei I.T. (Shanghai) Co., Ltd. LED SPECIFICATION Part No.：510E850C Ø Absolute maximum ratings（Ta = 25℃） Characteristics Parameter Symbol Test Conditions Min. Power Dissipation Reverse Voltage Forward Current Operating Temperature Range Storage Temperature Range Soldering Temperature Unit Max. 100 —— 1000 +85 +100 260 mW V mA ℃ ℃ ℃ —— 9 —— -40 -40 Pd VR IFM Topr Tstr Tsd —— IR=10μA Duty=0.01mS 1kHz —— —— t≤5sec,2mm from case —— Ø Electrical and optical characteristics （Ta = 25℃） Value Parameter Forward Voltage Reverse Current Peak Wavelength Spectrum Width of Half Value Radiant Intensity Viewing Angle Symbol VF IR λp Δλ Test Condition Min. IF = 50mA VR = 9V IF = 50mA IF = 50mA IF=50mA IF = 50mA ---------—— —— ---Typ. 1.55 ---850 45 160 13 Max. 1.8 10 ---—— —— ---V μA nm nm mW/Sr Deg. Unit Ie 2θ1/2 www.ledz.com 2/3 Hebei I.T. (Shanghai) Co., Ltd. LED SPECIFICATION Part No.：510E850C Ø Typical electrical/optical characteristic curves： 100 80 60 40 20 0 1.3 Radiant Intensity(mW/sr) Relative Value at IF=50mA 1.4 1.5 1.6 1.7 Forward Voltage(V) 1.8 Forward Current(mA) 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 IF-Forward Current (mA) 100 100 Forward Current(mA) 80 60 40 20 0 0 20 40 60 80 100 Radiant Intensity 2.5 2.0 1.5 1.0 0.5 0 -40 -20 0 20 40 60 80 Ambient Temperature T A (℃) 100 Ambient Temperature T A (℃) Relative Luminous Intensity 100 75 50 25 0 500 600 700 800 900 Wavelength λ(nm) 1000 1100 www.ledz.com 3/3