H650TBXX

PHASE CONTROL THYRISTOR H650TBXX TJ (0C) Symbol Characteristics Conditions Value Unit BLOCKING PARAMETERS VRRM VDRM IRRM IDRM Repetitive Repetitive voltage Repetitive Repetitive peak reverse voltage peak off-stage peak reverse current peak off-state current V = VRRM V = VRRM 125 125 125 125 200-600 200-600 40 40 V V mA mA CONDUCTING PARAMETERS IF(AV) IRMS ITSM I2 t VT V0 R0 Average on-state current RMS on-state current Surge on-state current I2 t Peak on-state voltage drop Threshold voltage On-state slope resistance Sine wave, 10mS without reverse voltage On-state current = 2 kA 125 125 125 125 180 sine, 50H Z, TC = 700C 650 1020 14 980 1.35 1.00 0.12 A A kA kA2S V V mΩ TRIGGERING PARAMETERS IGT VGT IL PG –PEAK di/dt VFGM IFGM Gate trigger current Gate trigger voltage Latching Current Maximum Peak Gate Power Repetitive rate of rise of current Maximum forward gate voltage Maximum forward gate current VD = 5V VD = 5V Pulse width 100μSec 25 25 25 300 2.00 1000 160 120 12 40 mA V mA W A/μSec V A THERMAL & MECHANICAL PARAMETERS R TH (J-C) RTH (C-HK) TJ TSTG F W Thermal impedance, 180 conduction, Sine Thermal impedance Maximum Permissible junction temperature Storage temperature range Mounting Torque Weight Junction to case Case to heatsink 0.070 0.015 125 -40 - 125 18 875 0 C/W C/W 0 0 0 C C NM gms HIND RECTIFIERS LTD 1 of 6 PHASE CONTROL THYRISTOR H650TBXX All dimensions in mm HIND RECTIFIERS LTD 2 of 6 PHASE CONTROL THYRISTOR H650TBXX On State Power Loss 1200 1100 1000 900 800 DC 1800 1200 600 Pt(av) - W 700 600 500 400 300 200 100 0 0 100 200 300 400 500 600 It (av) 700 800 900 1000 1100 1200 M aximum Permissible Case Temp 140 120 100 Tcase (0C) 80 60 40 20 0 0 100 200 300 400 500 600 It(av) A 700 800 900 1000 1100 1200 600 1200 1800 DC HIND RECTIFIERS LTD 3 of 6 PHASE CONTROL THYRISTOR H650TBXX Max non repetitive Surge Current 15000 14000 13000 12000 11000 10000 9000 8000 7000 6000 5000 4000 3000 2000 1000 0 0.01 0.1 Tim e in Sec Itsm (A) 1 10 Transient Thermal Impedance Junction to Case 0.08 0.07 0.06 0.05 Rth(j-c) 0.04 0.03 0.02 0.01 0 0.001 0.01 0.1 Time in Sec 1 10 HIND RECTIFIERS LTD 4 of 6 PHASE CONTROL THYRISTOR H650TBXX On State Characteristics 3000 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 0.5 1 1.5 2 2.5 3 I t(av) A Vt (V) Gate Trigger Characteristics 4 3 250C VG(V) - V 2 1 0 0 100 200 300 400 500 IG (av) - A HIND RECTIFIERS LTD 5 of 6 PHASE CONTROL THYRISTOR H650TBXX Ordering Information: H Hirect make Thyristor 650 IF(AV) = 650A TB TB – with a Pigtail XX VRRM = XX * 100 e.g.12 * 100 =1200V Hind Rectifiers Ltd reserves the right to change the specifications without notice. This datasheet specifies technical information for semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Lake Road Bhandup (West) Mumbai – 400 078 Tel: - +91 22 2596 8027/28/29/31 Fax: - +91 22 2596 4114 E-mail: - marketing@hirect.com Website: - www.hirect.com Hind Rectifiers Ltd June-2008 HIND RECTIFIERS LTD 6 of 6