1SS84

1SS84

  • 厂商:

    HITACHI(日立)

  • 封装:

  • 描述:

    1SS84 - Silicon Epitaxial Planar Diode for High Speed Switching - Hitachi Semiconductor

  • 数据手册
  • 价格&库存
1SS84 数据手册
ADE-208-151A(Z) 1SS84 Silicon Epitaxial Planar Diode for High Speed Switching Rev. 1 Aug. 1995 Features • Low reverse current. • High reliability with glass seal. Outline Ordering Information Type No. Cathode 2nd band 3rd band Package Code 1 3rd band 2nd band Cathode band 2 1SS84 Light Blue Dark Green Dark Green DO-35 1. Cathode 2. Anode Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature * Within 1s forward surge current. Symbol VRM VR IFM IFSM * Io Pd Tj Tstg Value 75 70 450 1 150 250 175 -65 to +175 Unit V V mA A mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Reverse recovery time Symbol Min VF IR1 IR2 IR3 C trr — — — — — — Typ — 0.3 — — — — Max 0.8 3 10 100 5 50 pF ns nA Unit V Test Condition IF = 10 mA VR = 0.3 V VR = 20 V VR = 55 V VR = 1 V, f = 1 MHz IF=IR=10mA, Irr=1mA,RL=100Ω 1SS84 10 -1 10 -5 Ta=125°C -6 10 (A) -2 10 Reverse current I R (A) Ta=75°C 10 -7 Forward current I F 25 °C Ta =75 °C Ta= 25° Ta= C -25 °C 10 -3 Ta =1 10 -4 10 -8 Ta=25°C 10 -5 10 -9 Ta= 0 °C 10 -6 10 0 0.6 0.2 0.8 0.4 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 1.0 -10 0 60 20 40 80 Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage 100 f=1MHz 10 Capacitance C (pF) 1.0 10 -1 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 102 1SS84 Package Dimensions Unit: mm 26.0 Min 4.2 Max 26.0 Min φ 2.0 Max φ 0.5 1 2 3rd band (Dark Green) 2nd band (Dark Green) Cathode band (Light Blue) 1 Cathode 2 Anode HITACHI Code JEDEC Code EIAJ Code Weight (g) DO-35 DO-35 SC-48 0.13
1SS84 价格&库存

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