2SA1171

2SA1171 Silicon PNP Epitaxial Application Low frequency small signal amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1171 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –90 –90 –5 –50 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min –90 — 1 Typ — — — — — 200 1.6 Max — –0.5 800 –0.75 –0.5 — — Unit V µA Test conditions I C = –1 mA, RBE = ∞ VCB = –75 V, IE = 0 VCE = –12 V, IC = –2 mA Collector to emitter breakdown V(BR)CEO voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: Grade Mark hFE D PD 250 to 500 E PE 400 to 800 I CBO hFE* VBE VCE(sat) fT Cob 250 — — — — V V MHz pF VCE = –12 V, IC = –2 mA I C = –10 mA, IB = –1 mA VCE = –12 V, IC = –2 mA VCB = –25 V, IE = 0, f = 1 MHz 1. The 2SA1171 is grouped by hFE as follows. See characteristic curves of 2SA872. 2 2SA1171 Maximum Collector Dissipation Curve Collector power dissipation Pc (mW) 150 100 50 0 50 100 150 Ambient Temperature Ta (°C) 3 Unit: mm 0.65 0.10 3 – 0.4 + 0.05 – 0.16 – 0.06 + 0.10 1.5 ± 0.15 + 0.2 – 0.6 0 – 0.1 0.95 0.95 1.9 ± 0.2 2.95 ± 0.2 0.3 + 0.2 1.1 – 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK — Conforms 0.011 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. 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