2SB1390

2SB1390 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter ID 4 kΩ (Typ) 200 Ω (Typ) 3 12 3 2SB1390 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Tj Tstg ID* 1 1 Ratings –60 –60 –7 –8 –12 2 25 150 –55 to +150 8 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –60 –60 –7 — — 1000 — — — — — Typ — — — — — — — — — — — Max — — — –10 –10 20000 –1.5 –3.0 –2.0 –3.5 3.0 V V V Unit V V V µA Test conditions I C = –0.1 mA, IE = 0 I C = –25 mA, RBE = ∞ I E = –50 mA, IC = 0 VCB = –50 V, IE = 0 VCE = –50 V, RBE = ∞ VCE = –3 V, IC = –4 A*1 I C = –4 A, IB = –8 mA*1 I C = –8 A, IB = –80 mA*1 I C = –4 A, IB = –8 mA*1 I C = –8 A, IB = –80 mA*1 I D = 8 A*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD See switching characteristic curve of 2SB1103. 2 2SB1390 Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) –30 iC(peak) Collector current IC (A) –10 IC(max) –3 –1.0 –0.3 –0.1 Ta = 25°C 1 Shot Pulse 20 Area of Safe Operation 1 µs ) µs 5°C 100 s =2 s 1m n(T C 0m = 1 eratio Op DC PW 10 0 50 100 Case temperature TC (°C) 150 –0.03 –0.3 –1.0 –3 –10 –30 –100 –300 Collector to emitter voltage VCE (V) Typical Output Characteristics –10 –5 DC Current Transfer Ratio vs. Collector Current 10000 VCE = –3 V DC current transfer ratio hFE 5000 TC = 25°C –4.5 –4 –3 Collector current IC (A) –8 .5 –3 –2.5 –2 TC =7 5° C 25 °C –1.5 –6 P 2000 1000 500 °C –25 C =2 –1.0 –4 5W IB = –0.5 mA –2 IB = 0 0 –3 –4 –5 –1 –2 Collector to emitter voltage VCE (V) 200 100 –0.1 –0.2 –5 –0.5 –1.0 –2 Collector current IC (A) –10 3 2SB1390 Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) –10 –5 TC = 25°C 200 –2 –1.0 –0.5 VCE(sat) VBE(sat) 500 IC/IB = 200 –0.2 –0.1 –0.2 –0.5 –1.0 –2 –5 Collector current IC (A) –10 Transient Thermal Resistance 10 Thermal resistance θj-c (°C/W) 3 TC = 25°C 1.0 0.3 0.1 1m 10 m 100 m 1.0 Time t (s) 10 100 1000 4 10.0 ± 0.3 7.0 ± 0.3 φ 3.2 ± 0.2 2.8 ± 0.2 2.5 ± 0.2 Unit: mm 0.6 5.0 ± 0.3 2.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 12.0 ± 0.3 4.45 ± 0.3 2.5 14.0 ± 1.0 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220FM — Conforms 1.8 g 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 17.0 ± 0.3 Cautions 1. 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