2SC1515K

2SC1515(K) Silicon NPN Triple Diffused Application High voltage switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1515 (K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Symbol VCBO VCES VCEO Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature VEBO IC PC Tj Tstg Ratings 200 200 150 5 50 200 150 –55 to +150 Unit V V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 200 150 5 — 30 — — 60 — Typ — — — — — — — — — Max — — — 0.1 300 1.0 1.5 — 10 V V MHz pF Unit V V V µA Test conditions I C = 10 µA, RBE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 6 V, IC = 10 mA I C = 10 mA, IB = 1 mA I C = 10 mA, IB = 1 mA VCE = 6 V, IC = 10 mA VCB = 6 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CES voltage V(BR)CEO Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CBO hFE VCE(sat) VBE(sat) fT Cob 2 2SC1515 (K) Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300 Collector Current IC (mA) Typical Output Characteristics 20 200 180 16 160 140 12 120 100 8 80 60 4 40 20 µA IB = 0 0 100 150 50 Ambient Temperature Ta (°C) 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) P C = 200 20 0 m W 100 Collector Cutoff Current vs. Ambient Temperature 1,000 Collector Cutoff Current ICBO (nA) VCB = 20 V 100 100 DC Current Transfer Ratio vs. Collector Current VCE = 6 V DC Current Transfer hFE 80 60 10 40 1.0 20 0.1 0 0 120 160 200 40 80 Ambient Temperature Ta (°C) 1 3 10 30 Collector Current IC (mA) 100 3 2SC1515 (K) DC Current Transfer Ratio vs. Ambient Temperature 200 DC Current Transfer Ratio hFE VCE = 6 V IC = 10 mA Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current 1.2 1.0 0.8 0.6 0.4 0.2 0 0.5 IC = 10 IB 160 120 80 40 0 60 80 100 20 40 Ambient Temperature Ta (°C) 5.0 10 20 1.0 2.0 Collector Current IC (mA) 50 4 Unit: mm 4.8 ± 0.3 3.8 ± 0.3 2.3 Max 0.5 ± 0.1 0.7 0.60 Max 12.7 Min 5.0 ± 0.2 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: (408) 433-1990 Fax: (408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.