2SC458K

2SC458(K) Silicon NPN Epitaxial Application • Low frequency amplifier • Medium speed switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458 (K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 30 30 5 100 –100 200 150 –55 to +150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 30 5 — — 1 Typ — — — — — — — — — — 80 300 260 Max — — — 0.5 1.0 500 0.4 1.0 — 4 — — — Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 18 V, IE = 0 VEB = 4 V, IC = 0 VCE = 1 V, IC = 10 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Turn on time Turn off time Storage time Note: B 100 to 200 V(BR)EBO I CBO I EBO hFE* 100 — — 100 — — — — VCE(sat) VBE(sat) fT Cob t on t off t stg V V MHz pF ns ns ns I C = 10 mA, IB = 1 mA I C = 10 mA, IB = 1 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz I C = 10 IB1 = –10 IB2 = 10 mA, VCC = 10 V I C = IB1 = –IB2 = 20 mA, VCC = 5 V 1. The 2SC458 (K) is grouped by hFE as follows. C 160 to 320 D 250 to 500 2 2SC458 (K) Small Signal h Parameters Item Input impedance Voltage feedback ratio Current transfer ratio Output admittance Symbol hie hre hfe hoe Typ 16.5 70 130 11 µS Unit kΩ × 10 –6 Test conditions VCE = 5 V, IC = 0.1 mA, f = 270 Hz Switching Time Test Circuit ton, toff Test Circuit Switching Time Test Circuit tstg Test Circuit 6k P.G. tr, tf < 20 ns = PW > 2 µs = 6k D.U.T 0.005 µ 0.005 µ CRT 1k P.G. tr < 10 ns = PW > 1 µs = D.U.T 0.5 µ 220 100 200 7V 0.002 µ 0.002 µ CRT 240 50 –6 V –+ 50 µ –+ 50 µ 10 V Unit R:Ω C:F –+ 50 µ –+ 50 µ 5V Unit R:Ω C:F Response Waveform 13 V Input 0 90% Output 10% ton toff Response Waveform 0 Input –9 V Output 10% tstg 10% IC 10 mA IB1 1 mA IB2 –1 mA VCC 10 V VBB –6 V Vin 13 V IC IB1 IB2 VCC 5V VBB 7V Vin –9 V 20 mA 20 mA –20 mA 3 2SC458 (K) Collector Cutoff Current vs. Collector to Base Voltage Maximum Collector Dissipation Curve Collector power dissipation PC (mW) Collector cutoff current ICBO (nA) 250 200 150 100 50 100 30 10 3 1.0 0.3 0.1 0.03 0 50 100 Ambient Tmperature Ta (°C) 150 0 5 10 15 20 25 30 Collector to Base Voltage VCB (V) Ta = 25°C 75 125 100 50 Typical Output Characteristics (1) 100 Collector Current IC (mA) 2.0 .8 1 .6 1 1.4 1.2 1.0 0.8 0.6 0.4 Typical Output Characteristics (2) 2.0 14 12 10 Collector Current IC (mA) 80 1.8 60 1.2 8 6 0.8 4 40 0.2 20 0.1 mA 0.4 IB = 0 0 1.6 0.4 0.8 1.2 2.0 Collector to Emitter Voltage VCE (V) 0 2 1 µA IB = 0 20 40 60 80 100 Collector to Emitter Voltage VCE (V) 4 2SC458 (K) Collector to Emitter Saturation Voltage vs. Base Current Collector to Emitter Saturation Voltage VCE(sat) (V) 1.0 DC Current Transfer Ratio hFE 240 200 160 120 80 40 0 0.5 DC Current Transfer Ratio vs. Collector Current 0.8 0.6 0.4 00°C Ta = 1 75 50 25 0 –25 –50 VCE = 1 V IC = 5 mA 0.2 0 0.02 0.05 0.1 0.2 0.5 1.0 2 Base Current IB (mA) 100 10 20 50 5 10 20 1.0 2 5 10 20 Collector Current IC (mA) 50 100 Base to Emitter Saturation Voltage VBE (sat) (V) Base to Emitter Saturation Voltage vs. Collector Current IC = 10 IB –25 25 °C Ta = 75 Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage VCE(sat) (V) 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0 1 2 5 10 20 50 100 Collector Current IC (mA) Ta = 25°C –50 IC = 10 IB 1.2 1.0 0.8 0.6 0.4 0.2 0 1 2 5 10 20 50 Collector Current IC (mA) 100 5 2SC458 (K) Gain Bandwidth Product vs. Collector Current 500 Gain Bandwidth Product fT (MHz) VCE = 10 V Input and Output Capacitance vs. Voltage Collector output Capacitance Cob (pF) Emitter Input Capacitance Cib (pF) 8 7 f = 1 MHz 400 C ib 6 5 (I C = 0) 300 C 4 3 2 0.3 ob 200 (I E =0 ) 100 0 0.5 1.0 2 5 10 Collector Current IC (mA) 20 1.0 3 10 30 Collector to Base Voltage VCB (V) Emitter to Base Voltage VEB (V) Switching Time vs. Collector Current VCC = 10.3 V IC = 10 IB1 = –10 IB2 toff tstg ton td Percentage of Relative to IC = 0.1 mA 1.0 0.5 Switching Time t (µs) 100 50 20 10 5 h Parameter vs. Collector Current VCE = 6 V f = 270 Hz hie hre hfe 0.2 0.1 0.05 h 2 h ie re 1.0 hfe 0.5 hoe 0.2 0.1 0.05 hie 0.02 0.01 1 2 5 10 20 50 Collector Current IC (mA) 100 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2 5 10 Collector Current (mA) 6 2SC458 (K) h Parameter vs. Collector to Emitter Voltage 1.8 Percentage of Relative to VCE = 5 V IC = 0.1mA f = 270 Hz 1.6 hre 1.4 hoe 1.2 hoe 1.0 hfe hie hre hfe hie 0.8 0.5 1.0 2 5 10 20 Collector to Emitter Voltage VCE (V) 7 Unit: mm 4.8 ± 0.3 3.8 ± 0.3 2.3 Max 0.5 ± 0.1 0.7 0.60 Max 12.7 Min 5.0 ± 0.2 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. 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