2SC4702

2SC4702 Silicon NPN Epitaxial Application High voltage amplifier Features • High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ. Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4702 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 50 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Note: Marking is “XV–”. Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO VCE(sat) hFE fT Cob Min 300 300 5 — — 60 — — Typ — — — — — — 80 1.5 Max — — — 0.1 0.5 150 — — MHz pF Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 250 V, IE = 0 I C = 30 mA, IB = 3 mA VCE = 6 V, IC = 2 mA VCE = 6 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz 2 2SC4702 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 Collector Current IC (mA) Typical Output Characteristics 10 100 80 Pulse Test 60 50 6 40 4 30 20 IB = 10 µA 0 50 100 Ambient Temperature Ta (°C) 150 0 20 40 60 80 100 Collector to Emitter Voltage VCE (V) 8 100 50 2 Typical Transfer Characteristics 100 Collector Current IC (mA) Ta = 75°C DC Current Transfer Ratio hFE 25 –25 1,000 DC Current Transfer Ratio vs. Collector Current Ta = 75°C 100 25 10 –25 1.0 VCE = 6 V Pulse Test 0.1 10 VCE = 6 V Pulse Test 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) 1.0 10 Collector Current IC (mA) 100 3 2SC4702 Collector to Emitter Saturation Voltage vs. Collector Current 10 IC/IB = 10 Pulse Test 1.0 Ta = 75°C 25 –25 0.1 Gain Bandwidth Product fT (MHz) Gain Bandwidth Product vs. Collector Current 1,000 VCE = 6 V Collector to Emitter Saturation Voltage VCE (sat) (V) 100 10 0.01 0.1 1.0 10 Collector Current IC (mA) 100 1 0.1 1.0 10 Collector Current IC (mA) 100 Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 100 f = 1 MHz IE = 0 10 1.0 0.1 0.1 1.0 10 100 Collector to Base Voltage VCB (V) 4 Unit: mm 0.65 0.10 3 – 0.4 + 0.05 – 0.16 – 0.06 + 0.10 1.5 ± 0.15 + 0.2 – 0.6 0 – 0.1 0.95 0.95 1.9 ± 0.2 2.95 ± 0.2 0.3 + 0.2 1.1 – 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK — Conforms 0.011 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.