2SC4829

2SC4829 Silicon NPN Epitaxial Application High frequency amplifier Features • High frequency characteristics fT = 1100 MHz Typ • High voltage and small output capacitance VCEO = 100 V, Cob = 4.2 pF Typ • Suitable for wide band video amplifier Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SC4829 Ordering Information hFE 2SC4829B 2SC4829C 60 to 120 100 to 200 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC (peak) PC Tj Tstg Ratings 100 100 3 0.2 0.5 0.9 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter cutoff current Collector cutoff current DC current transfer ratio 2SC4829B 2SC4829C Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO I EBO I CBO hFE hFE VBE VCE(sat) fT Cob Min 100 100 — — 60 100 — — 800 — Typ — — — — — — — — 1100 4.2 Max — — 10 1.0 120 200 1.0 1.0 — 6.0 V V MHz pF VCE = 10 V, IC = 10 mA I C = 100 mA, IB = 10 mA VCE = 10 V, IE = 100 mA VCB = 30 V, IE = 0, f = 1 MHz Unit V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ VEB = 3 V, IC = 0 VCB = 80 V, IE = 0 VCE = 10 V, IC = 10 mA 2 2SC4829 Maximum Collector Dissipation Curve 1.6 Collector Power Dissipation Pc (W) 50 I C (mA) 400 µA 350 µA 300 µA 250 µA 200 µA 20 150 µA 100 µA 50 µA Typical Output Characteristics 40 1.2 0.8 0.4 Collector Current 50 100 150 Ambient Temperature Ta (°C) 200 30 10 0 IB = 0 4 6 8 10 2 0 Collector to Emitter Voltage V CE (V) DC Current Transfer Ratio vs. Collector Current VCE = 10 V Pulse test Collector to Emitter Saturation Voltage VCE(sat) (V) 1000 DC Current Transfer Ratio h FE 500 1.0 0.5 Collector to Emitter Saturation Voltage vs. Collector Current I C / I B = 10 Pulse test 200 100 50 Ta = 75°C 25 °C –25°C 0.2 0.1 Ta = 75°C 25 °C 0.05 –25°C 20 10 1 10 100 1000 Collector Current I C (mA) 0.02 0.01 1 10 100 1000 Collector Current I C (mA) 3 2SC4829 Collector Current vs. Base to Emitter Voltage f T (MHz) 1000 I C (mA) VCE = 10 V Pulse test 5000 VCE = 10 V Pulse test 2000 1000 500 Gain Bandwidth Product vs. Collector Current Ta = 75°C 25°C 10 –25°C Gain Bandwidth Product 100 Collector Current 200 100 50 1 10 100 1000 Collector Current I C (mA) 1 0 0.2 0.4 0.6 Base to Emitter Voltage 0.8 V BE (V) 1.0 Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 100 50 20 10 5 IE = 0 f = 1 MHz 2 1 2 5 10 20 50 100 Collector to Base Voltage V CB (V) 4 Unit: mm 4.8 ± 0.3 3.8 ± 0.3 0.65 ± 0.1 0.75 Max 0.5 ± 0.1 0.7 0.60 Max 2.3 Max 10.1 Min 8.0 ± 0.5 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 Mod — Conforms 0.35 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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