2SC4934
Silicon NPN Epitaxial
Application
High voltage amplifier
TO–126FM
Ordering Information
hFE
1
2
3
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2SC4934D 2SC4934E 250 to 500 400 to 800
1. Emitter 2. Collector 3. Base
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Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC PC PC*1 Tj Tstg Rating 120 120 5 0.2 1.5 8 150 –55 to +150 Unit V V V A W W °C °C
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2SC4934
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE hFE VBE VCE(sat) fT Cob Min 120 Typ — Max — Unit V Test Conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 80 V, IE = 0 VCE = 5 V, IC = 10 mA V VCE = 5 V, IC = 10 mA IC = 200 mA, IB = 20 mA VCE = 10 V, IE = 50 mA VCB = 30 V, IE = 0, f = 1 MHz
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120 — — V
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5 — — V
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— — 10 µA
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DC current transfer ratio 2SC4934D 2SC4934E Base to emitter voltage 250 400 — — — — 500 800 1.0
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Collector to emitter saturation voltage Gain bandwidth product — — 1.0 V
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— 350 — MHz
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Collector output capacitance — 3.5 — pF
——————————————————————————————————————————— See characteristic curves of 2SC4046.
2SC4934
Maximum Collector Power Dissipation Curve 8 Collector Power Dissipation Pc (W) Tc
6
4
2
Ta
0
50 100 150 Temperature T (°C)
200
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