2SC4964

2SC4964 Silicon NPN Epitaxial ADE-208-005 1st. Edition Application VHF / UHF RF switch Features • Low Ron and high performance for RF switch. • Capable of high density mounting. Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4964 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 12 8 3 100 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Collector output capacitance On resistance Note: Marking is “YV–”. I EBO hFE VCE(sat) Cob Ron Min 12 — — — 100 — — — Typ — — — — 250 200 1.2 2.0 Max — 1 1 10 600 300 1.6 — mV pF Ω Unit V µA mA µA Test conditions I C = 10 µA, IE = 0 VCB = 10 V, IE = 0 VCE = 8 V, RBE = ∞ VEB = 3 V, IC = 0 VCE = 5 V, IC = 5 mA I C = 80 mA, IB = 5 mA VCB = 5 V, IE = 0, f = 1 MHz I B = 2.5 mA, f = 1 kHz 2 2SC4964 DC Current Transfer Ratio vs. Collector Current 500 DC Current Transfer Ratio h FE VCE = 5V Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 400 100 300 200 50 100 0 1 0 50 100 Ambient Temperature Ta (°C) Collector Output Capacitance vs. Collector to Base Voltage 150 2 5 10 20 50 Collector Current I C (mA) Gain Bandwidth Product vs. Collector Current 100 Collector Output Capacitance Cob (pF) 2.8 2.0 Gain Bandwidth Product f T (GHz) IE = 0 f = 1 MHz VCE = 5V 1.6 2.4 2.0 1.2 1.6 0.8 1.2 0.8 0.5 0.4 0 1 2 5 10 20 Collector to Base Voltage V CB (V) 1 2 5 10 20 50 Collector Current I C (mA) 100 3 2SC4964 On Resistance vs. Base Current 10 8 On Resistance Ron (Ω ) 6 Ron test circuit 4 3 2.7k Ω 2 D.U.T. 2nF 1 0.1 0.2 0.5 1 2 5 Base Current I B (mA) 10 VB Vin 100µF R1(1k Ω) 100µF Vout f = 1kHz Ron= Vout R1 Vin-Vout Signal Reduction vs. Frequency 0 VB = 0 Signal Reduction Rs (dB) - 10 INPUT - 20 V B = 5V - 30 D.U.T. 2nF - 40 VB - 50 50 100 200 500 Frequency f (MHz) 1000 L1 : Inside dia ø 3 mm , ø 0.5 mm Enameled Copper Wire 7 Turns. 2.7k Ω L1 Signal Reduction test circuit 33pF 33pF OUTPUT 4 2SC4964 Signal Reduction vs. Frequency 0 V B = 5V Signal Reduction Rt (dB) - 10 Signal Reduction test circuit INPUT 33pF VB = 0 L1 2.7k Ω - 40 2nF VB L1 , L2 : Inside dia ø 3 mm , ø 0.5 mm Enameled Copper Wire 7 Turns. L2 D.U.T. 33pF OUTPUT - 20 - 30 - 50 50 100 200 500 Frequency f (MHz) 1000 5 Unit: mm 0.65 0.10 3 – 0.4 + 0.05 – 0.16 – 0.06 + 0.10 1.5 ± 0.15 + 0.2 – 0.6 0 – 0.1 0.95 0.95 1.9 ± 0.2 2.95 ± 0.2 0.3 + 0.2 1.1 – 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK — Conforms 0.011 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: (408) 433-1990 Fax: (408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.