2SD1135

2SD1135 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB859 Outline TO-220AB 1 23 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Ratings 100 80 5 4 8 40 150 –45 to +150 Unit V V V A A W °C °C 2SD1135 Electrical Characteristics (Ta = 25°C) Item Symbol Min 80 5 — 1 Typ — — — — — — — 10 40 Max — — 0.1 200 — 1.5 2 — — Unit V V mA Test conditions I C = 50 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 80 V, IE = 0 VCE = 5 V, IC = 1 A*2 VCE = 5 V, IC = 0.1 A*2 VCE = 5 V, IC = 1 A*2 I C = 2 A, IB = 0.2 A*2 VCE = 5 V, IC = 0.5 A*2 VCB = 20 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance VBE VCE(sat) fT Cob 60 35 — — — — V V MHz pF Notes: 1. The 2SD1135 is grouped by h FE1 as follows. 2. Pulse test. B 60 to 120 C 100 to 200 Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W) 5 Area of Safe Operation (10 V, 4 A) IC max (Continuous) D (33 V, 1.2 A) 2 (T C O C pe = 25 rat 1.0 °C ion ) 0.5 40 20 Collector current IC (A) 0.2 0.1 (80 V, 0.06 A) 0.05 0 50 100 Case temperature TC (°C) 150 1 2 5 10 20 50 100 Collector to emitter voltage VCE (V) 2 2SD1135 Typical Output Characteristics 5 TC = 25°C PC = 40 W 10 160 140 100 80 Typical Transfer Characteristics Collector current IC (A) Collector current IC (A) 4 3 1.0 0.3 0.1 0.03 VCE = 5 V 3 60 40 2 20 mA 1 IB = 0 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 Base to emitter voltage VBE (V) 1.4 Collector to emitter saturation voltage VCE (sat) (V) DC Current Transfer Ratio vs. Collector Current 1,000 DC current transfer ratio hFE 300 100 30 10 3 1 0.01 0.03 0.1 0.3 1.0 3 Collector current IC (A) TC = 75°C 25 –25 Collector to Emitter Saturation Voltage vs. Collector Current 10 3 1.0 0.3 0.1 –25 0.03 25 IC = 10 IB TC = 75°C VCE = 5 V 10 0.01 0.01 0.03 0.1 0.3 1.0 3 Collector current IC (A) TC = 75°C 25 –25 10 3 Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 -0.08 +0.1 4.44 ± 0.2 1.26 ± 0.15 6.4 +0.2 –0.1 18.5 ± 0.5 15.0 ± 0.3 1.27 2.7 MAX 14.0 ± 0.5 1.5 MAX 7.8 ± 0.5 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220AB Conforms Conforms 1.8 g Cautions 1. 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