2SD1606

2SD1606 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 2.6 kΩ (Typ) 160 Ω (Typ) 3 1 23 2SD1606 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID* 1 1 Ratings 120 120 7 6 12 40 150 –55 to +150 6 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Symbol Min 120 7 — — 1000 — — — — — — — — Typ — — — — — — — — — — 0.6 7.0 2.0 Max — — 100 10 20000 1.5 3.0 2.0 3.5 3.0 — — — V V V V V µs µs µs Unit V V µA µA Test conditions I C = 25 mA, RBE = ∞ I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 3 A*1 I C = 3 A, IB = 6 mA*1 I C = 6 A, IB = 60 mA*1 I C = 3 A, IB = 6 mA*1 I C = 6 A, IB = 60 mA*1 I D = 6 A*1 I C = 3 A, IB1 = –IB2 = 6 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Storage time Fall time Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t stg tf 2 2SD1606 Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W) 10 iC (peak) Collector current IC (A) IC (max) 3 PW Area of Safe Operation 1 µs 10 0µ s 40 1m s 1.0 0.3 0.1 Ta = 25°C 1 shot pulse 0.03 DC C s 5° =2 0m TC =1 n( tio era Op 20 ) 0 50 100 Case temperature TC (°C) 150 3 10 30 100 300 Collector to emitter voltage VCE (V) Typical Output Characteristics 10 DC current transfer ratio hFE 2.5 30,000 DC Current Transfer Ratio vs. Collector Current Collector current IC (A) 8 3.0 10,000 3,000 1,000 300 100 30 0.1 2.0 1.5 1.0 6 =7 Ta 25 5 –2 5°C 4 0.5 mA 2 Ta = 25°C IB = 0 VCE = 3 V Pulse 0 1 2 3 4 Collector to emitter voltage VCE (V) 5 0.3 1.0 3 Collector current IC (A) 10 3 2SD1606 Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) Saturation Voltage vs. Collector Current –10 3 1.0 VCE (sat) 0.3 0.1 Ta = 25°C 0.03 0.01 0.1 500 lC/lB = 200 500 200 3 Switching time t (µs) 1.0 0.3 0.1 0.03 0.01 0.1 VCC = 30 V IC = 100 IB1 = –100 IB2 0.3 1.0 3 Collector current IC (A) 10 tf ton 10 VBE (sat) Switching Time vs. Collector Current tstg Ta = 25°C 0.3 1.0 3 Collector current IC (A) 10 Transient Thermal Resistance 10 Thermal resistance θj-c (°C/W) 1 s to 1,000 s 3 1.0 0.3 0.1 0.03 0.01 1 1 10 10 Time t 100 100 1,000 (s) 1,000 (ms) TC = 25°C 1 ms to 1 s 4 Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 -0.08 +0.1 4.44 ± 0.2 1.26 ± 0.15 6.4 +0.2 –0.1 18.5 ± 0.5 15.0 ± 0.3 1.27 2.7 MAX 14.0 ± 0.5 1.5 MAX 7.8 ± 0.5 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220AB Conforms Conforms 1.8 g Cautions 1. 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