2SD1978

2SD1978 Silicon NPN Epitaxial, Darlington Application • Low frequency power amplifier • Complementary pair with 2SB1387 Outline TO-92MOD 2 3 ID 2 kΩ (Typ) 0.5 kΩ (Typ) 1 1. Emitter 2. Collector 3. Base 3 2 1 2SD1978 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature E to C diode forward current Symbol VCBO VCEO VEBO IC ic (peak) PC Tj Tstg ID Ratings 120 120 7 1.5 3.0 0.9 150 –55 to +150 1.5 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 7 — — 2000 — — — — — Typ — — — — — — — — — — — Max — — — 1.0 10 30000 1.5 2.0 2.0 2.5 3.0 V V V V V Unit V V V µA µA Test conditions I C = 0.1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 50 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 1 A*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I D = 1.5 A*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage hFE VCE(sat)1 VCE(sat)2 Base to emitter saturation voltage VBE(sat)1 VBE(sat)2 E to C diode forward voltage Note: 1. Pulse test VD 2 2SD1978 Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) Collector Current IC (A) Area of Safe Operation 10 iC(peak) 3 s 0µ 10 1 µs s s 1 m 10 m = PW 0.8 1.0 0.3 0.1 0.03 0.01 Ta = 25°C 1 Shot Pulse 0.4 0 100 150 50 Ambient Temperature Ta (°C) 3 30 100 300 10 Collector to Emitter Voltage VCE (V) Typical Output Characteristics 2.0 Ta = 25°C PC = 0 DC Current Transfer Ratio vs. Collector Current 30,000 DC Current Transfer Ratio hFE Collector Current IC (A) 1.6 200 180 160 140 120 10,000 °C 75 = 25 5 Ta –2 .9 W 1.2 3,000 0.8 100 µA 1,000 Ta = 25°C Pulse 0.4 IB = 0 0 2 3 4 5 1 Collector to Emitter Voltage VCE (V) 300 0.1 1.0 3 0.3 Collector Current IC (A) 10 3 2SD1978 Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) Saturation Voltage vs. Collector Current 10 3 VBE(sat) 1.0 VCE(sat) 200,500 500 IC /IB = 200 0.3 Ta = 25°C Pulse 0.3 1.0 3 Collector Current IC (A) 10 0.1 0.1 Transient Thermal Resistance 300 Thermal Resistance θj-a (°C/W) 100 30 10 3 1.0 0.3 1m Ta = 25°C 10 m 100 m 1 Time t (s) 10 100 1,000 4 Unit: mm 4.8 ± 0.3 3.8 ± 0.3 0.65 ± 0.1 0.75 Max 0.5 ± 0.1 0.7 0.60 Max 2.3 Max 10.1 Min 8.0 ± 0.5 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 Mod — Conforms 0.35 g Cautions 1. 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