2SD2104

2SD2104 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 2 kΩ (Typ) 200 Ω (Typ) 3 2SD2104 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg 1 Rating 120 120 7 8 12 2 25 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 7 — — 1000 — — — — Typ — — — — — — — — — — Max — — — 10 10 20000 1.5 3.0 2.0 3.5 V V Unit V V V µA Test conditions I C = 0.1 mA, IE = 0 I C = 25 mA, RBE = ∞ I E = 50 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 4 A*1 I C = 4 A, IB = 8 mA*1 I C = 8 A, IB = 80 mA*1 I C = 4 A, IB = 8 mA*1 I C = 8 A, IB = 80 mA*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 2 2SD2104 Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) 20 10 Collector current IC (A) 5 2 1.0 0.5 0.2 0.1 0.05 0.02 0 50 100 Case temperature TC (°C) 150 1 3 10 30 100 300 Collector to emitter voltage VCE (V) Ta = 25°C 1 Shot Pulse IC(max) 20 iC(peak) Area of Safe Operation 1 µs 10 PW =1 0m Op er DC 0µ s 1m s s ion (T C = ) °C 25 at 10 Typical Output Characteristics 10 TC = 25°C 10,000 PC DC Current Transfer Ratio vs. Collector Current Collector current IC (A) 8 0 2.1.8 DC current transfer ratio hFE = 25 W 1..6 14 6 1.2 1.0 0.8 3,000 TC = 75 0.6 m 4 A °C °C 25 °C 5 –2 1,000 VCE = 3 V 300 2 IB = 0 0 1 2 3 4 5 Collector to emitter voltage VCE (V) 100 0.1 3 1.0 0.3 Collector current IC (A) 10 3 2SD2104 Saturation Voltage vs. Collector Current 10 Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) 3 VBE(sat) 1.0 VCE(sat) 0.3 IC/IB = 200 500 200 0.1 0.1 0.3 3 1.0 Collector current IC (A) 10 Transient Thermal Resistance 10 Thermal resistance θj-c (°C/W) 3 TC = 25°C 1.0 0.3 0.1 1m 10 m 100 m 1.0 Time t (s) 10 100 1000 4 10.0 ± 0.3 7.0 ± 0.3 φ 3.2 ± 0.2 2.8 ± 0.2 2.5 ± 0.2 Unit: mm 0.6 5.0 ± 0.3 2.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 12.0 ± 0.3 4.45 ± 0.3 2.5 14.0 ± 1.0 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220FM — Conforms 1.8 g 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 17.0 ± 0.3 Cautions 1. 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