2SJ117

2SJ117 Silicon P-Channel MOS FET ADE-208-1180 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators. Outline TO-220AB D 1 2 3 1. Gate 2. Drain (Flange) 3. Source G S 2SJ117 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch* Tch Tstg 1 Ratings –400 ±20 –2 –4 –2 40 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS I GSS –400 — — –2.0 — Typ — — — — 5 Max — ±1 –1 –5.0 7 Unit V µA mA V Test conditions I D = –10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = –320 V, VGS = 0 I D = –1 mA, VDS = –10 V I D = –1 A, VGS = –15 V*1 S pF pF pF ns ns ns ns V ns I F = –1 A, VGS = 0 I F = –1 A, VGS = 0, diF/dt = 100 A/µs I D = –2 A, VGS = –15 V, RL = 15 I D = –1 A, VDS = –20 V*1 VDS = –10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr VGS(off) RDS(on) 0.4 — — — — — — — — — 0.7 520 110 15 10 25 45 35 –0.8 300 — — — — — — — — — — 2 2SJ117 Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL 50 Ω Vin –15 V Vout td (on) 90% 10% tr td (off) 90% 90% 10% tf Vin 10% Waveforms VDD . = –30 V . 6