2SJ244

2SJ244 Silicon P-Channel MOS FET Application High speed power switching Low voltage operation Features • Very Low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline UPAK 21 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ244 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* Pch* Tch Tstg 2 1 Ratings –12 ±7 ±2 ±4 1 150 –55 to +150 Unit V V A A W °C °C Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10% 2. Value on the alumina ceramic board (12.5×20×0.7 mm) 3. Marking is “JY”. Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source cutoff current Symbol Min V(BR)DSS V(BR)GSS I GSS –12 ±7 — — –0.4 — — — — — — — — — Typ — — — — — 0.65 0.5 1.8 130 50 260 365 1450 — Max — — ±5 –1 –1.4 0.9 — — — — — — — 7 Unit V V µA µA V Ω Ω S pF pF pF ns ns V I D = –0.2 A*1, Vin = –4 V, RL = 51 Ω I F = 4 A*1, VGS = 0 Test conditions I D = –1 mA, VGS = 0 I G = ±10 µA, VDS = 0 VGS = ±6 V, VDS = 0 VDS = –8 V, VGS = 0 I D = –100 µA, VDS = –5 V I D = –0.5 A*1, VGS = –2.5 V I D = –1 A*1, VGS = –4 V I D = –1 A*1, VDS = –5 V VDS = –5 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Turn-off delay time Body to drain diode forward voltage Note: 1. Pulse test VGS(off) RDS(on)1 RDS(on)2 |yfs| Ciss Coss Crss t (on) t (off) VDF 2 2SJ244 Maximum Safe Operation Area Maximum Channel Power Dissipation Curve 2.0 -3 -10 Operation in this Area is limited by R DS(on) PW = 1 ms 1 shot Channel Power Dissipation Pch ( W ) (on the alumina ceramic board) Drain Current I D ( A ) D -1.0 C O 1.5 pe ra tio n -0.3 (T a= 25 °C ) 1.0 -0.1 -0.03 0.5 -0.01 -0.1 -0.3 -1.0 -3 -10 -30 -100 Drain to Source Voltage V DS (V) 0 50 100 Ambient Temperature 150 Ta ( °C ) 200 **on the alumina ceramic board Typical Output Characteristics -5 -5 -4 (A) -4 - 4.5 -3 ID -3 -2.5 -2 -2 -1 Pulse Test V GS = -1.5 V -3.5 Typical Forward Transfer Characteristics -5 VDS = -5 V -4 Ta = -25 °C +25 +75 -3 Pulse Test Drain Current Drain Current ID (A) -2 -1 0 -6 -4 -2 Drain to Source Voltage -8 V DS (V) -10 0 -1 -2 -3 -4 -5 Gate to Source Voltage V GS (V) 3 2SJ244 Forward Transfer Admittance vs. Drain Current 20 Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance R DS(on) (Ω ) 10 Pulse Test Forward Transfer Admittance |Yfs| ( S ) VDS = -5 V 10 Pulse Test 5 5 Ta = -25 °C 2 +25 +75 1.0 2 -2 V 1.0 -3 V 0.5 VGS = -4 V 0.5 0.2 0.2 -0.1 -0.2 -0.5 -1.0 -2 -5 -10 0.1 -0.1 -0.2 Drain Current ID (A) -1.0 -2 -0.5 Drain Current I D (A) -5 -10 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) ( V ) Drain to Source On State Resistance R DS(on) (Ω ) -1.0 Pulse Test -0.8 Drain to Source on State Resistance vs. Case Temperature 1.0 Pulse Test I D = -1 A 0.8 VGS = -2.5 V -0.5 A 0.6 -0.5 A 0.4 I D = -1 A -0.6 I D = -1 A -0.4 -0.5 -0.2 VGS = -4 V -0.2 -0.1 0.2 0 -1 -2 -3 -4 -5 0 -25 0 25 50 75 100 Gate to Source Voltage V GS (V) Case Temperature Tc ( °C ) 4 2SJ244 Reverse Recovery Time vs. Reverse Drain Current 2000 2000 Switching Time vs. Drain Current VGS = - 4 V, V DD = - 10 V PW = 2 µs, Duty Cycle = 1 % t rr ( ns ) di/dt = 10 A/µs PW = 10 µs 1000 1000 td(off) tf tr Reverse Recovery Time t ( ns ) Switching Time 500 500 200 200 100 100 td(on) 50 50 20 -0.1 -0.2 -0.5 -1.0 -2 -5 20 -10 -0.1 -0.2 -0.5 -1.0 -2 -5 -10 Reverse Drain Current I DR (A) Drain Current I D (A) Dynamic Input Characteristics 1000 -25 -10 Typical Capacitance vs. Drain to Source Voltage VGS = 0 I D = -4 A (V) Pulse Test -20 -5 V V DD = -10 V -8 V GS ( V ) ( pF ) 500 Coss f = 1 MHz V DS C Typical Capacitance 200 100 50 Ciss Drain to Source Voltage Gate to Source Voltage -15 V GS -6 -10 -4 Crss -5 V DD = -10 V -5 V -2 20 10 V DS 0 6 8 10 0 2 4 -0.1 Gate Charge Qg ( nc ) -0.2 -0.5 -1.0 -2 -5 Drain to Source Voltage V DS (V) -10 5 2SJ244 Reverse Drain Current vs. Source to Drain Voltage -4 (A) Pulse Test Reverse Drain Current I DR -3 -2 -4 V -2.5 V -1 VGS = 0 0 -0.5 -1.0 -1.5 Source to Drain Voltage VSD (V) -2.0 6 Unit: mm 4.5 ± 0.1 0.4 1.8 Max φ1 1.5 ± 0.1 0.44 Max (2.5) (1.5) 1.5 1.5 3.0 0.8 Min 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) (0.4) 0.53 Max 0.48 Max 2.5 ± 0.1 4.25 Max UPAK — Conforms 0.050 g (0.2) Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.