2SJ245

2SJ245 L , 2SJ245 S SILICON P-CHANNEL MOS FET Application DPAK–1 High speed power switching 4 4 Features 1 23 • • • • Low on–resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC converter 12 3 2, 4 1 3 1. Gate 2. Drain 3. Source 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body–drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings –60 ±20 –5 –20 –5 20 150 –55 to +150 Unit V V A A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc=25°C 2SJ245 L , 2SJ245 S Table 2 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min –60 Typ — Max — Unit V Test conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –50 V, VGS = 0 ID = –1 mA, VDS = –10 V ———————————————————————————————————————————– ———————————————————————————————————————————– ±20 — — V ———————————————————————————————————————————– — — –1.0 — — — — 0.2 ±10 –100 –2.0 0.25 µA µA V Ω Ω ———————————————————————————————————————————– ———————————————————————————————————————————– ———————————————————————————————————————————– ID = –3 A VGS = –10 V * ID = –3 A VGS = –4 V * ID = –3 A VDS = –10 V * VDS = –10 V VGS = 0 f = 1 MHz ID = –3 A VGS = –10 V RL = 10 Ω ————————————————————————– — 0.28 0.38 ———————————————————————————————————————————– Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 2.2 3.7 — S ———————————————————————————————————————————– Input capacitance Output capacitance Reverse transfer capacitance Turn–on delay time Rise time Turn–off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time — — — — — — — — 610 315 95 12 45 170 90 –1.1 — — — — — — — — pF pF pF ns ns ns ns V IF = –5 A, VGS = 0 IF = –5 A, VGS = 0, diF / dt = 50 A / µs ———————————————————————————————— ———————————————————————————————— ———————————————————————————————————————————– ———————————————————————————————— ———————————————————————————————— ———————————————————————————————— ———————————————————————————————————————————– ———————————————————————————————————————————– — 160 — ns ———————————————————————————————————————————– 2SJ245 L , 2SJ245 S Power vs. Temperature Derating 30 Channel Dissipation Pch (W) Maximum Safe Operation Area –100 I D (A) Operation in this area is limited by RDS(on) –30 –10 PW = 10 µs 10 0 Drain Current 20 1 10 m µs m s D –3 –1 C O s (1 pe ra °C ) ot 25 sh = c (T tio 10 n –0.3 Ta = 25°C 0 50 100 Case Temperature Tc (°C) 150 –0.1 –1 –10 –30 –100 –0.3 –3 Drain to Source Voltage V DS (V) –10 Typical Output Characteristics –10 V –6 V –5 V –4 V I D (A) Typical Transfer Characteristics –5 Tc = –25°C 25°C 75°C Pulse test –3 V DS = –10 V –2 ) I D (A) –8 Pulse test –6 –3.5 V –4 –3 V –2 VGS = –2.5 V –2 –4 –6 Drain to Source Voltage –8 –10 V DS (V) –4 Drain Current Drain Current –1 0 0 –1 –2 –3 Gate to Source Voltage –4 –5 V GS (V) 2SJ245 L , 2SJ245 S –1.0 Drain to Source Saturation Voltage V DS(on) (V) Static Drain to Source on State Resistance R DS(on) ( Ω) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 5 Pulse test 2 1 –0.8 I D = –3 A –0.6 –2 A 0.5 VGS = –4 V –10 V –0.4 –1 A Pulse test 0 –2 –4 –6 Gate to Source Voltage –8 V GS (V) –10 0.2 0.1 –0.2 0.05 –0.5 –1 –2 –5 Drain Current –10 –20 I D (A) –50 Static Drain to Source on State Resistance R DS(on) ( Ω) Forward Transfer Admittance |yfs | (S) Static Drain to Source on State Resistance vs. Temperature 1.0 Pulse test 0.8 Forward Transfer Admittance vs. Drain Current 10 5 Tc = –25°C 25°C 0.6 –3 A VGS = –4 V –3 A –1, –2 A 2 1 75°C 0.4 0.5 0.2 –10 V 0 –40 –I D = –1, –2 A 160 0.2 0.1 –0.1 –0.2 –0.5 –1 Drain Current Pulse test VDS = –10 V –2 –5 I D (A) –10 0 40 80 120 Case Temperature Tc (°C) 2SJ245 L , 2SJ245 S Body to Drain Diode Reverse Recovery Time 1000 t rr (ns) 500 Typical Capacitance vs. Drain to Source Voltage 2000 1000 C (pF) 500 Ciss Reverse Recovery Time 200 100 50 di/dt = 50 A/µs V GS = 0 Ta = 25°C Pulse test 200 100 Coss Capacitance Crss 50 V GS = 0 f = 1 MHz 20 0 –10 –20 –30 –40 –50 Drain to Source Voltage V DS (V) 20 10 –0.1 –0.2 –0.5 –1 –2 –5 –10 Reverse Drain Current I DR (A) V DS (V) 0 Dynamic Input Characteristics V DD = –10 V –25 V –50 V V DD = –50 V –25 V –10 V V DS 0 V GS (V) 500 Switching Characteristics t (ns) –20 –4 200 100 V GS = –10 V 50 V DD = –30 V PW = 2 µ s duty ≤ 1% 20 10 tf t d (off) Drain to Source Voltage –60 VGS I D = –5 A 8 16 24 32 Gate Charge Qg (nc) –12 Switching Time –40 –8 Gate to Source Voltage tr t d (on) –80 –16 –20 40 –100 0 5 –0.1 –0.2 –0.5 –1 Drain Current –2 –5 I D (A) –10 2SJ245 L , 2SJ245 S –5 I DR (A) Reverse Drain Current vs. Source to Drain Voltage –4 Reverse Drain Current –3 –10 V –2 –5 V VGS = 0, 5 V –1 Pulse test 0 –0.4 –0.8 –1.2 Source to Drain Voltage –1.6 –2.0 V SD (V) 2SJ245 L , 2SJ245 S Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.2 0.1 0.05 0.02 0.0 1 0.3 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 6.25 °C/W, Tc = 25 °C Pu lse PDM PW T 0.03 1s t ho D= PW T 0.01 10 µ 100 µ 1m 10 m Pulse Width 100 m PW (S) 1 10 Vin Monitor D.U.T. RL Vout Monitor Vin 10% 90% Vin 10 V 50 Ω V DD = 30 V Vout td(on) 90% 10% tr td(off) 90% 10% tf