2SJ290

2SJ280 L , 2SJ280 S Silicon P Channel MOS FET Application LDPAK High speed power switching 4 4 Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC converter • Avalanche Ratings 1 1 2, 4 2 3 2 3 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body–drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR IAP*** EAR*** Pch** Tch Tstg Ratings –60 ±20 –30 –120 –30 –30 77 75 150 –55 to +150 Unit V V A A A A mJ W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 2SJ280 L , 2SJ280 S Table 2 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min –60 Typ — Max — Unit V Test conditions ID = –10 mA, VGS = 0 IG = ±200 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –50 V, VGS = 0 ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— ——————————————————————————————————————————— ±20 — — V ——————————————————————————————————————————— — — –1.0 — — — — 0.033 ±10 –250 –2.25 0.043 µA µA V Ω Ω ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ID = –15 A VGS = –10 V * ID = –15 A VGS = –4 V * ID = –15 A VDS = –10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = –15 A VGS = –10 V RL = 2 Ω ———————————————————————— — 0.045 0.06 ——————————————————————————————————————————— Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 17 25 — S ——————————————————————————————————————————— Input capacitance Output capacitance Reverse transfer capacitance Turn–on delay time Rise time Turn–off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time * Pulse Test — — — — — — — — 3300 1500 480 30 170 500 390 –1.5 — — — — — — — — pF pF pF ns ns ns ns V IF = –30 A, VGS = 0 IF = –30 A, VGS = 0, diF / dt = 50 A / µs ———————————————————————————————— ———————————————————————————————— ——————————————————————————————————————————— ———————————————————————————————— ———————————————————————————————— ———————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— — 200 — ns ——————————————————————————————————————————— 2SJ280 L , 2SJ280 S Power vs. Temperature Derating 75 Channel Dissipation Pch (W) Drain Current I D (A) Maximum Safe Operation Area –500 –300 10 µs ar O is pe lim ra ite tion d in by t R his on ) –100 –30 –10 –3 ea 10 0 50 D S( µs 1 DC s m 10 s m n PW atio r pe O = c (T 25 0 50 100 150 Case Temperature Tc (°C) Ta = 25°C –1 –0.5 –0.1 –0.3 –1 –3 –10 –30 –100 Drain to Source Voltage VDS (V) Typical Output Characteristics –50 –40 Drain Current I D (A) –30 –20 –10 VGS = –2 V 0 0 –2 –4 –6 –8 –10 Drain to Source Voltage VDS (V) 0 –10 V –6 V –4 V –3.5 V –50 –40 D (A) Typical Transfer Characteristics Tc = 25°C –25°C 75°C = ) °C 25 –3 V Drain Current I Pulse Test –30 V = –10 V GS –20 –10 –2.5 V –1 –2 –3 –4 –5 Gate to Source Voltage VGS (V) 2SJ280 L , 2SJ280 S Drain-Source Saturation Voltage vs. Gate-Source Voltage –2.0 Drain to Source Saturation Voltage V DS (on) (V) –1.6 –1.2 –0.8 –0.4 Pulse Test Static Drain-Source on State Resistance R DS(on) (Ω ) 0.5 0.2 0.1 Static Drain-Source on State Resistance vs. Drain Current I D = –30 A –20 A –10 A 0.05 0.02 0.01 VGS = –4 V –10 V 0 –2 –4 –6 –8 –10 Gate to Source Voltage VGS (V) 0.005 –2 –5 –10 –20 –50 –100 –200 Drain Current I D (A) Static Drain-Source on State Resistance vs. Temperature 0.1 Static Drain-Source on State Resistance RDS(on) ( Ω ) 0.08 0.06 0.04 0.02 0 –40 –10 V I D = –30 A –10 A, –20 A Pulse test I D = –30 A VGS = –4 V –10 A, –20 A Forward Transfer Admittance vs. Drain Current 100 Forward Transfer Admittance |y fs | (s) 50 20 10 5 2 –2 –5 –10 –20 Drain Current I D (A) –50 Pulse Test VDS = –10 V Tc = 25°C –25°C 75°C 0 40 80 120 160 Case Temperature TC (°C) 1 –0.5 –1 2SJ280 L , 2SJ280 S Body-Drain Diode Reverse Recovery Time 500 Reverse Recovery Time t rr (ns) 200 C (pF) 100 50 20 10 5 –1 di/dt = 50 A/ µ s, VGS = 0 Ta = 25°C 10000 Typical Capacitance vs. Drain-Source Voltage Ciss 1000 Coss Crss 100 VGS = 0, f = 1 MHz Capacitance –2 –5 –10 –20 –50 –100 Reverse Drain Current I DR (A) 10 0 –10 –20 –30 Drain to Source Voltage –40 –50 VDS (V) Dynamic Input Characteristics 0 Drain to Source Voltage VDS (V) –20 –40 –60 –80 Gate to Source Voltage VGS (V) VDD = –10 V –25 V –50 V VDS VDD = –10 V –25 V –50 V Switching Characteristics 0 –4 –8 –12 1000 td(off) Switching Time t (ns) 500 200 100 50 20 10 –0.5 –1 tf tr I D = –30 A VGS –16 –20 200 td(on) VGS = –10 V, VDD = –30 V : PW = 2 µs, duty < 1% = –100 0 40 80 120 160 Gate Charge Qg (nc) –2 –5 –10 –20 Drain Current I D (A) –50 2SJ280 L , 2SJ280 S Reverse Drain Current vs. Source to Drain Voltage Repetive Avaranche Energy E AR (mJ) –50 Maxmum Avalanche Energy vs. Channel Temperature Derating 100 Pulse Test –40 VGS = –10 V –30 –20 –10 80 60 Reverse Drain Current I AP = –30 A VDD = –25 V duty < 0.1% Rg >50 Ω = I DR (A) –5 V 0, 5V 40 20 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage VSD (V) 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform VDSS E AR = 1 • L • I AP 2 • 2 VDSS – VDD V(BR)DSS I AP VDD ID 50 Ω 0 VDD VDS VDS Monitor Rg Vin –15 V L I AP Monitor D.U.T 2SJ290 Silicon P-Channel MOS FET Application TO–220AB High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC converter • Avalanche Ratings 2 1 1 2 3 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body–drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR IAP*** EAR*** Pch** Tch Tstg Ratings –60 ±20 –15 –60 –15 –15 19 50 150 –55 to +150 Unit V V A A A A mJ W °C °C ———————————————————————————————————————————– ———————————————————————————————————————————– ———————————————————————————————————————————– ———————————————————————————————————————————– ———————————————————————————————————————————– ———————————————————————————————————————————– ———————————————————————————————————————————– ———————————————————————————————————————————– ———————————————————————————————————————————– ———————————————————————————————————————————– ———————————————————————————————————————————– * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω