2SJ351

2SJ351, 2SJ352 Silicon P-Channel MOS FET ADE-208-143 1st. Edition Application Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221 Features • • • • • • • High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Ordering Information Type No. 2SJ351 2SJ352 VDSX –180 V –200 V 2SJ351, 2SJ352 Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SJ351 2SJ352 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C VGSS ID I DR Pch* Tch Tstg 1 Symbol VDSX Ratings –180 –200 ±20 –8 –8 100 150 –55 to +150 Unit V V A A W °C °C 2 2SJ351, 2SJ352 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SJ351 2SJ352 V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss t on t off Symbol Min V(BR)DSX –180 –200 ±20 –0.15 — 0.7 — — — — — Typ — — — — — 1.0 800 1000 18 320 120 Max — — — –1.45 –12 1.4 — — — — — V V V S pF pF pF ns ns VDD = –30 V, ID = –4 A I G = ±100 µA, VDS = 0 I D = –100 mA, VDS = –10 V I D = –8 A, VGD = 0*1 I D = –3 A, VDS = –10 V*1 VGS = 5 V, VDS = –10 V, f = 1 MHz Unit V Test conditions I D = –10 mA, VGS = 10 V Gate to source breakdown voltage Gate to source cutoff voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note: 1. Pulse test 3 2SJ351, 2SJ352 Power vs. Temperature Derating 150 Pch (W) –20 –10 Drain Current ID (A) –5 IDmax (Continuous) Ta = 25°C Maximum Safe Operation Area ot Sh ot 1 Sh s m s1 10 m ) 0 = ot °C 10 Sh 25 PW = = 1 s TC PW 1 ( = on ti PW era p O C 100 D Channel Dissipation –2 –1.0 –0.5 50 2SJ351 2SJ352 –500 0 50 100 Tc (°C) 150 –0.2 –5 Case Temperature –10 –20 –50 –100 –200 Drain to Source Voltage VDS (V) Typical Output Characteristics –10 –10 Typical Output Characteristics TC = 25°C –8 Drain Current ID (A) –8 –6 –7 –6 –4 –5 –4 –2 –3 –2 –1 –50 0 –2 –4 –6 –8 Drain to Source Voltage VDS (V) –10 0V –9 TC = 25°C = –1 VGS = –10 V –8 Drain Current ID (A) –8 –7 –6 –5 Pc –9 –6 VG S h= –4 12 –4 –3 5W –2 –2 –1 0 0 –10 –20 –30 –40 Drain to Source Voltage VDS (V) 4 2SJ351, 2SJ352 Typical Transfer Characteristics Typical Transfer Characteristics –1.0 –10 VDS = –10 V VDS = –10 V °C Drain Current ID (A) Drain Current ID (A) C –6 75 –0.6 T –4 –0.4 –2 –0.2 0 –2 –4 –6 –8 Gate to Source Voltage VGS (V) 0 –0.4 –0.8 –1.2 –1.6 Gate to Source Voltage VGS (V) –10 T C 25 °C 25 75 –2.0 –8 –0.8 =– 25 Forward Transfer Admittance vs. Frequency 5 Switching Time vs. Drain Current 500 ton Switching Time ton, toff (ns) Forward Transfer Admittance yfs (S) 1.0 200 100 50 toff 100 m 10 m TC = 25°C VDS = –10 V ID = –2 A 20 10 5 –0.1 1m 0.5 m 2k 10 k 100 k 1M Frequency f (Hz) 10 M 20 M =– 25 –0.2 –0.5 –1.0 –2 Drain Current ID (A) –5 –10 5 2SJ351, 2SJ352 Switching Time Test Circuit Output RL Input ton 90% Output 10% Input 90% VDD . . = –30V 50 Ω toff 10% Waveforms PW = 50 µs duty ratio = 1% 6 Unit: mm 5.0 ± 0.3 15.6 ± 0.3 1.0 φ3.2 ± 0.2 4.8 ± 0.2 1.5 0.5 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 18.0 ± 0.5 1.0 ± 0.2 2.0 0.6 ± 0.2 3.6 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P — Conforms 5.0 g 0.3 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.