2SJ450
Silicon P-Channel MOS FET
ADE-208-381 1st. Edition
Application
High speed power switching
Features
• • • • Low on-resistance. Low drive power High speed switching 2.5 V gate drive device.
Outline
UPAK 21 4 D 1. Gate 2. Drain 3. Source 4. Drain S
3
G
2SJ450
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Drain peak current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings –60 ±20 –1 –2 –1 1 150 –55 to +150
Unit V V A A A W °C °C
Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10% 2. When using aluminium ceramic board (12.5 × 20 × 70 mm)
2
2SJ450
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min –60 ±20 — — –0.5 — — 0.6 — — — — — — — — — Typ — — — — — 0.85 1.1 1.0 150 72 24 6 9 50 35 –0.9 100 Max — — –50 ±10 –1.5 1.2 1.9 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –1 A, VGS = 0 I F = –1 A, VGS = 0 diF/dt = 50A/µs Test conditions I D = –10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VDS = –50 V, VGS = 0 VGS = ±16 V, VDS = 0 VDS = –10 V, ID = –1 mA I D = –0.5 A VGS = –4 V*1 I D = –0.3 A VGS = –2.5 V*1 I D = –0.5 A VDS = –10 V VDS = –10 V VGS = 0 f = 1 MHz VGS = –10 V, ID = –0.5 A RL = 60 Ω
Zero gate voltage drain current I DSS Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Fowerd transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test Marking is "UY". I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr
3
2SJ450
Power vs. Temperature Derating 2.0 Pch (W) Test Condition : When using the aliminium Ceramic board (12.5 x 20 x 70 mm) 1.5
–10
Maximum Safe Operation Area
I D (A)
–3
10
10 0
µs
–1
µs
1
Channel Dissipation
PW
s m
Drain Current
=
1.0
–0.3 –0.1 –0.03 –0.01
0.5
Operation in this area is limited by R DS(on)
C D O pe ra
10 s m
tio n
Ta = 25 °C 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V)
0
50
100
150 Tc (°C)
200
0.1
Case Temperature
–2.0
Typical Output Characteristics –10 V –6 V –4 V –3 V Pulse Test (A) –2.5 V
Typical Transfer Characteristics –2.0 V DS = –10 V Pulse Test –1.6 –25°C –1.2 Tc = 75°C 25°C
I D (A)
–1.6
–1.2 –2 V
Drain Current
–0.8
Drain Current
ID VGS = –1.5 V –2 –4 –6 Drain to Source Voltage –8 –10 V DS (V)
–0.8
–0.4
–0.4
0
0
–1 –2 –3 Gate to Source Voltage
–4 –5 V GS (V)
4
2SJ450
Drain to Source Saturation Voltage vs. Gate to Source Voltage V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) –2.0 Pulse Test Static Drain to Source on State Resistance vs. Drain Current 20 10 5 2 VGS = –2.5 V 1 –4 V
–1.6 I D = –1.5 A
Drain to Source Voltage
–1.2
–0.8
–1 A –0.5 A
–0.4
0.5
0
–4 –2 –6 Gate to Source Voltage
–8 –10 V GS (V)
Pulse Test 0.2 –5 –0.1 –0.2 –0.5 –1 –2 Drain Current I D (A)
–10
Static Drain to Source on State Resistance R DS(on) ( Ω)
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance vs. Temperature 10 Pulse Test 8 I D = –1.5 A
Forward Transfer Admittance vs. Drain Current 10 3 1 0.3 0.1 0.03 25 °C 75 °C Tc = –25 °C
6
4 V GS = –2.5 V 2 –1.0 A –0.5 A
0 –40
1.5 A –4 V –0.5 A –1.0 A 0 40 80 120 160 Case Temperature Tc (°C)
0.01 –1 –0.01 –0.03 –0.1 –0.3 –3 Drain Current I D (A)
V DS = –10 V Pulse Test –10
5
2SJ450
Body to Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 500 Capacitance C (pF) Typical Capacitance vs. Drain to Source Voltage
500
200 100 50
Ciss
200 100 50 di / dt = 50 A / µs V GS = 0, Ta = 25 °C
Coss
20 10 5 0 VGS = 0 f = 1 MHz –10 –20
Crss
20
10 –0.1 –0.2 –0.5 –1 –2 –5 –10 Reverse Drain Current I DR (A)
–30
–40
–50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics V DS (V) 0 V GS (V) V DD = –10 V –25 V –50 V 0
Switching Characteristics 200 100 Switching Time t (ns) 50 t d(off) tf tr t d(on) 5 2 –0.1 –0.2 V GS = –10 V, V DD = –30 V duty < 1 % –0.5 –1 –2 –5 –10
–20
–4
Drain to Source Voltage
–40
V DS V DD = –50 V –25 V –10 V
V GS
–8
Gate to Source Voltage
20 10
–60
–12
–80 –100 0 I D = –2 A 2 4 6 8 Gate Charge Qg (nc)
–16 –20 10
Drain Current
I D (A)
6
2SJ450
Reverse Drain Current vs. Source to Drain Voltage Pulse Test
–2.0 Reverse Drain Current I DR (A)
–1.6
–1.2
–5 V V GS = 0, 5 V
–0.8
–0.4
0
–0.4
–0.8
–1.2
–1.6
–2.0
Source to Drain Voltage
V SD (V)
Avalanche Test Circuit and Waveform
Vin Monitor D.U.T. RL
Vout Monitor
Vin 10% 90%
Vin 50 Ω –10 V
V DD = –30 V Vout td(on)
90% 10% tr td(off)
90% 10% tf
7
Unit: mm
4.5 ± 0.1
0.4
1.8 Max φ1
1.5 ± 0.1 0.44 Max (2.5)
(1.5)
1.5 1.5 3.0
0.8 Min
0.44 Max
Hitachi Code JEDEC EIAJ Weight (reference value)
(0.4)
0.53 Max 0.48 Max
2.5 ± 0.1 4.25 Max
UPAK — Conforms 0.050 g
(0.2)
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
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URL
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
