2SJ496

2SJ496 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-482 1st. Edition Features • Low on-resistance R DS(on) = 0.12Ω typ. (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A Outline TO-92 Mod D G 32 1 1. Source 2. Drain 3. Gate S 2SJ496 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings –60 ±20 –5 –20 –5 –5 2.14 0.9 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR* Pch* Tch Tstg 2 2SJ496 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min –60 ±20 — — –1.0 — — 3 — — — — — — — — — Typ — — — — — 0.12 0.17 5 600 290 80 10 25 95 55 –1.0 65 Max — — –10 ±10 –2.0 0.16 0.24 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I D = –5A, VGS = 0 I F = –5A, VGS = 0 diF/ dt = 50A/µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = –60 V, VGS = 0 VGS = ±16V, VDS = 0 I D = –1mA, VDS = –10V I D = –2.5A VGS = –10V*1 I D = –2.5A VGS = –4V*1 I D = 2.5A, VDS = 10V*1 VDS = –10V VGS = 0 f = 1MHz VGS = –10V, ID = –2.5A RL = 12Ω Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance RDS(on) Forward transfer admittance Input capacitance Output capacitance |yfs| Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test t d(on) tr t d(off) tf VDF t rr 3 2SJ496 Main Characteristics Power vs. Temperature Derating 1.6 Pch (W) Maximum Safe Operation Area –100 –30 I D (A) 1.2 –10 –3 Channel Dissipation Drain Current 0.8 –1 –0.3 –0.1 0.4 Op er at Operation in ion this area is limited by R DS(on) DC 10 10 µs PW 1 0 µ = ms s (1 10 m sh s ot) –0.03 0 50 100 150 Ta (°C) 200 Ta = 25 °C –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Drain to Source Voltage V DS (V) Ambient Temperature Typical Output Characteristics –10 –10 V –5 V –4 V –10 –3.5 V (A) Ta = 25°C Pulse Test –3 V –4 –8 Typical Transfer Characteristics V DS = –10 V Pulse Test I D (A) –8 ID Drain Current –6 –6 Drain Current –4 Tc = 75 °C 25 °C –25 °C –2 –2.5 V VGS = –2 V –2 0 –2 –4 –6 Drain to Source Voltage –8 –10 V DS (V) 0 –1 –2 –3 Gate to Source Voltage –4 –5 V GS (V) 4 2SJ496 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( Ω ) –1.0 Static Drain to Source on State Resistance vs. Drain Current 1 0.5 0.2 0.1 VGS = –4 V –10 V –0.8 I D = –5 A –0.6 –0.4 –2 A –0.2 –1 A 0.05 0.02 0.01 –0.1 –0.3 –1 –3 Pulse Test –10 –30 –100 0 –4 –8 –12 Gate to Source Voltage –16 –20 V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) ( Ω) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 I D = –5 A –2 A V GS = –4 V –1 A –5 A –1, –2 A –10 V 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 20 10 5 2 1 0.5 0.1 –0.1 –0.2 V DS = –10 V Pulse Test –0.5 –1 –2 –5 Drain Current I D (A) –10 Ta = –25 °C 25 °C 75 °C 0.3 0.2 0.1 0 –40 5 2SJ496 Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss 500 200 100 50 Crss 10 di / dt = 50 A / µs VGS = 0, Ta = 25 °C 20 10 0 –10 –20 –30 –40 –50 Drain to Source Voltage V DS (V) Coss 2000 1000 Capacitance C (pF) 200 100 50 20 5 –0.1 –0.2 –0.5 –1 –2 –5 –10 Reverse Drain Current I DR (A) Dynamic Input Characteristics V DS (V) V DD = –10 V –25 V –50 V I D = –5 A V GS (V) 0 0 1000 300 100 30 10 3 Switching Characteristics V GS = –10 V, V DD = –30 V Pw = 5 µs, duty < 1 % t d(off) tf tr t d(on) Drain to Source Voltage –40 V DS V DD = –50 V –25 V –10 V V GS –8 –60 –12 –80 –100 0 –16 –20 40 Gate to Source Voltage Switching Time t (ns) –20 –4 32 8 16 24 Gate Charge Qg (nc) 1 –0.1 –0.2 –0.5 –1 –2 –5 Drain Current I D (A) –10 6 2SJ496 Reverse Drain Current vs. Source to Drain Voltage Repetive Avalanche Energy E AR (mJ) –10 Reverse Drain Current I DR (A) 2.5 I AP = –5 A V DD = –25 V duty < 0.1 % Rg > 50 Ω Maximum Avalanche Energy vs. Channel Temperature Derating –8 2.0 –6 –10 V –4 V GS = 0, 5 V –5 V 1.5 1.0 –2 Pulse Test 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) 0.5 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Avalanche Test Circuit EAR = Avalanche Waveform 1 2 • L • I AP • 2 VDSS VDSS – V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50 Ω 0 VDD 7 2SJ496 Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) 1 D=1 Ta = 25°C 0.3 0.1 0.5 0.2 0.1 0.05 0.03 0.01 0.02 0.01 1sho se t pul θ ch – a(t) = γ s (t) • θ ch – a θ ch – a = 139 °C/W, Ta = 25 °C PDM PW T D= PW T 0.003 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width 1 10 PW (S) 100 1000 10000 Switching Time Test Circuit Vin Monitor D.U.T. RL Vout Monitor Vin Switching Time Waveforms 10% 90% Vin 10 V 50 Ω V DD = –30 V Vout td(on) 90% 10% tr td(off) 90% 10% tf 8 2SJ496 Package Dimensions Unit: mm 5.2 max 4.2 max 0.70 max 0.75 max 0.60 max 0.55 max 10.1 min 2.3 max 0.7 8.5 max 0.5 max 1.27 2.54 Hitachi Code TO–92Mod. SC–51 EIAJ — JEDEC 9 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.