2SJ506L

2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st. Edition Features • Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices. Outline DPAK–2 4 D 4 12 G 3 12 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ506(L), 2SJ506(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings –30 ±20 –10 –40 –10 20 150 –55 to +150 Unit V V A A A W °C °C 2 2SJ506(L), 2SJ506(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min –30 ±20 — — –1.0 — — 10 — — — — — — — — — Typ — — — — — 65 110 16 660 440 140 12 65 85 65 –1.05 65 Max — — –10 ±10 –2.0 85 180 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = –10A, VGS = 0 I F = –10A, VGS = 0 diF/ dt = 50A/µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = –30 V, VGS = 0 VGS = ±16V, VDS = 0 I D = –1mA, VDS = –10V I D = –5A, VGS = –10VNote3 I D = –5A, VGS = –4V Note3 I D = –5A, VDS = –10V Note3 VDS = –10V VGS = 0 f = 1MHz I D = –5A, RL = 2Ω VGS = –10V Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test t d(on) tr t d(off) tf VDF t rr 3 2SJ506(L), 2SJ506(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area Ta = 25 °C 10 PW 40 Pch (W) –500 –200 I D (A) 30 –100 –50 –20 –10 –5 –2 –1 –0.5 –0.2 –0.1 10 µs Channel Dissipation Drain Current 20 DC =1 Op 10 Operation in this area is limited by R DS(on) –0.5 –1 –2 0m s( 1s er ho (T atio t) n c= 25 °C ) 0 1 m µs s 0 50 100 150 Tc (°C) 200 –0.1 –0.2 –5 –10 –20 –50 Case Temperature Drain to Source Voltage V DS (V) I D (A) ID (A) Typical Output Characteristics –10 V –8 V –20 –4.5 V Pulse Test –5 V –6 V –16 –4 V –12 Typical Transfer Characteristics –20 V DS = –10 V Pulse Test 25 °C –16 –12 Drain Current Drain Current –3.5 V –8 –3 V –4 VGS = –2.5 V 0 –4 –8 –12 Drain to Source Voltage –16 –20 V DS (V) –8 –4 75 °C Tc = –25 °C –1 –2 –3 –4 V GS (V) –5 0 Gate to Source Voltage 4 2SJ506(L), 2SJ506(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage –2 Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Static Drain to Source on State Resistance vs. Drain Current 1000 500 200 100 50 VGS = –4 V –10 V –1.6 –1.2 –0.8 I D = –10 A –0.4 –5 A –2 A 0 –4 –8 –12 –16 V GS (V) –20 Drain to Source On State Resistance R DS(on) ( Ω ) 20 10 –1 –2 –5 –10 Pulse Test –20 –50 –100 Gate to Source Voltage Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) ( Ω) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 200 –5 A Pulse Test 160 V GS = –4 V 120 I D = –10 A –2 A –10 A –2,–5 A V GS = –10 V 100 50 20 10 5 2 1 Forward Transfer Admittance vs. Drain Current Tc = –25 °C 25 °C 75 °C V DS = –10 V Pulse Test –5 –10 –20 –50 80 40 0 –40 0 40 80 Tc 120 (°C) 160 0.5 –0.1–0.2 –0.5 –1 –2 Case Temperature Drain Current I D (A) 5 2SJ506(L), 2SJ506(S) Body to Drain Diode Reverse Recovery Time 100 Reverse Recovery Time trr (ns) 5000 2000 50 Capacitance C (pF) 1000 500 200 100 50 20 10 0 –10 –20 –30 –40 –50 Drain to Source Voltage V DS (V) Crss Ciss Coss VGS = 0 f = 1 MHz Typical Capacitance vs. Drain to Source Voltage 20 di / dt = 50 A / µs VGS = 0, Ta = 25 °C 10 –0.1 –0.2 –0.5 –1 –2 –5 –10 –20 I DR (A) Reverse Drain Current Dynamic Input Characteristics V DS (V) V GS (V) 0 VDD = –5 V –10 V –25 V V DS –4 0 1000 500 Switching Time t (ns) 200 100 50 20 10 Switching Characteristics V GS = –10 V, V DD = –10 V PW = 10 µs, duty < 1 % = –10 Drain to Source Voltage Gate to Source Voltage –20 –30 V DD = –25 V –10 V –5 V V GS –8 t d(off) tf tr t d(on) –12 –40 I = –10 A –50 D 0 8 –16 –20 40 16 Gate Charge 32 24 Qg (nc) 5 –0.1 –0.2 –0.5 –1 –2 –5 –10 –20 Drain Current I D (A) –50 6 2SJ506(L), 2SJ506(S) Reverse Drain Current vs. Source to Drain Voltage –20 Reverse Drain Current I DR (A) Pulse Test –16 –10 V –12 V GS = 0.5 V –5 V –8 –4 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.05 0.02 0.0 1 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 6.25 °C/W, Tc = 25 °C P ot uls e PDM PW T D= 0.03 1s h PW T 0.01 10 µ 100 µ 1m 10 m Pulse Width 100 m PW (S) 1 10 7 2SJ506(L), 2SJ506(S) Switching Time Test Circuit Vin Monitor D.U.T. RL 90% Vin 50 Ω –10 V V DD = –10 V Vout td(on) 90% 10% tr td(off) 90% 10% tf Vout Monitor Vin 10% Waveforms 8 2SJ506(L), 2SJ506(S) Package Dimensions Unit: mm 1.7 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 1.7 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 3.1 ± 0.5 16.2 ± 0.5 4.7 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 2.3 ± 0.5 0.55 ± 0.1 5.5 ± 0.5 9.5 ± 0.5 1.2 Max 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 1.2 typ 0 ~ 0.25 0.55 ± 0.1 2.5 ± 0.5 2.29 ± 0.5 2.29 ± 0.5 0.55 ± 0.1 2.29 ± 0.5 L type S type Hitachi EIAJ ( L type) EIAJ ( S type) JEDEC DPAK–2 SC–63 SC–64 — 9 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.