2SJ517

2SJ517 Silicon P Channel MOS FET High Speed Power Switching ADE-208-575B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS =–4V, ID =–1A) • Low drive current • High speed switching • 2.5V gate drive devices. Outline UPAK 3 D 2 1 4 G S 1. Gate 2. Drain 3. Source 4. Drain 2SJ517 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings –20 ±10 –2 –4 –2 1 150 –55 to +150 Unit V V A A A W °C °C 1. PW ≤ 100 µs, duty cycle ≤ 10 % 2. When using aluminium ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min –20 ±10 — — –0.5 — — 1.8 — — — — — — — — — Typ — — — — — 0.18 0.27 3.0 320 190 90 14 75 90 90 –0.95 70 Max — — –10 ±10 –1.5 0.24 0.43 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –2A, VGS = 0 I F = –2A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = –20 V, VGS = 0 VGS = ±8V, VDS = 0 I D = –1mA, VDS = –10V I D = –1A, VGS = –4VNote3 I D = –1A, VGS = –2.5V Note3 I D = –1A, VDS = –10V Note3 VDS = –10V VGS = 0 f = 1MHz I D = –1A, RL = 10Ω VGS = –4V Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf Body–drain diode forward voltage VDF Body–drain diode reverse recovery time Note: 3. Pulse test 4. Marking is “YY”. t rr 2 2SJ517 Main Characteristics Power vs. Temperature Derating 2.0 –10 Maximum Safe Operation Area Pch (W) I D (A) Test Condition : When using the aliminium Ceramic board (12.5 x 20 x 70 mm) 1.5 –3 10 PW = µs t) ho µs s (1 s 0 10 1 m s m –1 10 Channel Dissipation Drain Current D C 1.0 –0.3 0.5 Operation in –0.1 this area is limited by R DS(on) –0.03 0 50 100 150 Ta (°C) 200 Ambient Temperature Ta = 25 °C –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Drain to Source Voltage V DS (V) Typical Output Characteristics –5 –10 V –4 V –3 V –4 –5 Pulse Test –2.5 V Typical Transfer Characteristics O n tio ra pe I D (A) (A) –4 –25°C Tc = 75°C –3 25°C –3 Drain Current –2 –2 V Drain Current ID VGS = –1.5 V –2 –1 –1 V DS = –10 V Pulse Test 0 –1 –2 –3 Gate to Source Voltage –4 –5 V GS (V) 0 –2 –4 –6 Drain to Source Voltage –8 –10 V DS (V) 3 2SJ517 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( Ω ) –1.0 Static Drain to Source on State Resistance vs. Drain Current 1 0.5 VGS = –2.5 V 0.2 –4 V 0.1 –0.8 –0.6 –0.4 I D = –2 A –0.2 –1 A –0.5 A –4 –2 –6 Gate to Source Voltage –8 –10 V GS (V) 0.05 0.02 0 Pulse Test 0.01 –0.1 –0.2 –0.5 –1 –2 –5 Drain Current I D (A) –10 Static Drain to Source on State Resistance R DS(on) ( Ω) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test I D = –2 A 0.4 VGS = –2.5 V –1 A –0.5 A Forward Transfer Admittance vs. Drain Current 10 5 Tc = –25 °C 2 1 0.5 25 °C 0.3 75 °C 0.2 –4 V –0.5, –1, –2 A 0.1 0 –40 0.2 0.1 –0.1 –0.2 V DS = –10 V Pulse Test –0.5 –1 –2 –5 Drain Current I D (A) –10 0 40 80 120 160 Case Temperature Tc (°C) 4 2SJ517 Body–Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) Typical Capacitance vs. Drain to Source Voltage 1000 Capacitance C (pF) 200 100 50 500 Ciss 200 100 50 Coss Crss 20 10 di / dt = 50 A / µs V GS = 0, Ta = 25 °C 20 10 0 5 –0.1 –0.2 –0.5 –1 –2 –5 –10 Reverse Drain Current I DR (A) VGS = 0 f = 1 MHz –4 –8 –12 –16 –20 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) Switching Characteristics 0 500 V GS (V) 0 V DD = –5 V –10 V –10 V DS Switching Time t (ns) –4 200 t d(off) 100 tf 50 tr Drain to Source Voltage –20 V DD = –5 V –10 V V GS –40 –50 0 4 8 12 16 Gate Charge Qg (nc) –8 –30 –12 Gate to Source Voltage 20 10 5 –0.1 –0.2 t d(on) V GS = –4 V, V DD = –10 V duty < 1 % –0.5 –1 –2 –5 Drain Current I D (A) –10 –16 –20 20 5 2SJ517 Reverse Drain Current vs. Source to Drain Voltage –5 Reverse Drain Current I DR (A) –4 –4 V V GS = 0, 5V –2.5 V –3 –2 –1 Pulse Test 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) Switching Time Test Circuit Vin Monitor D.U.T. RL Vout Monitor Vin 10% Waveform 90% Vin 4V 50 Ω V DD = –10 V Vout td(on) 90% 10% tr td(off) 90% 10% tf 6 2SJ517 Package Dimensions Unit: mm 4.5 ± 0.1 0.4 1.8 max 1.5 ± 0.1 0.44 max f1 1.5 1.5 3.0 0.8 min 0.53 max 0.48 max 1 2 3 2.5 ± 0.1 4.25 max 4 0.44 max Hitachi Code EIAJ JEDEC UPAK SC–62 UPAK 7 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.