2SJ552

2SJ552(L),2SJ552(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-651B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.042 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline LDPAK 4 D 1 G 1 4 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ552(L),2SJ552(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –20 –80 –20 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –20 34 75 150 –55 to +150 EAR Pch Tch Tstg 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min –60 ±20 — — –1.0 — — 10 — — — — — — — — — Typ — — — — — 0.042 0.065 16 1750 800 180 16 100 230 140 –1.0 100 Max — — –10 ±10 –2.0 0.055 0.095 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –20A, VGS = 0 I F = –20A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = –60 V, VGS = 0 VGS = ±16V, VDS = 0 I D = –1mA, VDS = –10V I D = –10A, VGS = –10V Note4 I D = –10A, VGS = –4V Note4 I D = –10A, VDS = –10V Note4 VDS = –10V VGS = 0 f = 1MHz VGS = –10V, I D = –10A RL = 3Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf Body–drain diode forward voltage VDF Body–drain diode reverse recovery time Note: 4. Pulse test t rr 2 2SJ552(L),2SJ552(S) Main Characteristics Power vs. Temperature Derating 80 Maximum Safe Operation Area –1000 –300 Pch (W) I D (A) 60 –100 –30 Channel Dissipation Drain Current 40 –10 –3 –1 –0.3 10 µs 10 0 PW 1 µs = m 10 s DC ms Op 20 Operation in this area is limited by R DS(on) (1 er sh ot) (T atio c= n 25 °C ) 0 50 100 150 Tc (°C) 200 Case Temperature Ta = 25 °C –0.1 –0.1 –0.3 –1 –3 –10 –30 –100 Drain to Source Voltage V DS (V) Typical Output Characteristics –50 –10 V –8 V –4.5 V –50 Typical Transfer Characteristics V DS = –10 V Pulse Test Tc = –25 °C 25 °C (A) ID Drain Current I D (A) –40 –6 V –5 V Pulse Test –4 V –40 –30 –3.5 V –20 –3 V –10 VGS = –2.5 V 0 –2 –4 –6 Drain to Source Voltage –8 –10 V DS (V) –30 Drain Current –20 –10 75 °C 0 –1 –2 –3 Gate to Source Voltage –4 –5 V GS (V) 3 2SJ552(L),2SJ552(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( Ω ) –2.0 Static Drain to Source on State Resistance vs. Drain Current 1 0.5 0.2 0.1 VGS = –4 V –10 V –1.6 –1.2 I D = –20 A –0.8 0.05 –0.4 –10 A –5 A –2 A 0.02 0.01 –1 –2 –5 –10 Pulse Test –20 –50 –100 0 –4 –8 –12 Gate to Source Voltage –16 –20 V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) ( Ω) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.2 Pulse Test 0.16 –10 A 0.12 I D = –20 A –5 A 0.08 V GS = –4 V –20 A 0.04 –10 V 0 –40 0 40 80 120 160 Case Temperature Tc (°C) –5, –10 A Forward Transfer Admittance vs. Drain Current 100 30 Tc = –25 °C 10 3 75 °C 1 0.3 25 °C 0.1 –0.1 –0.3 –1 –3 –10 –30 Drain Current I D (A) V DS = –10 V Pulse Test –100 4 2SJ552(L),2SJ552(S) Body–Drain Diode Reverse Recovery Time 1000 10000 Pulse Test 500 3000 Ciss 1000 300 100 Crss 30 10 –0.3 –1 –3 –10 –30 –100 Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) 200 100 50 di / dt = 50 A / µs VGS = 0, Ta = 25 °C Capacitance C (pF) Coss 20 10 –0.1 VGS = 0 f = 1 MHz 0 –10 –20 –30 –40 –50 Drain to Source Voltage V DS (V) Reverse Drain Current I DR (A) Dynamic Input Characteristics Switching Characteristics V DS (V) V GS (V) 0 V DD = –10 V –25 V –50 V V DS V GS V DD = –10 V –25 V –50 V I D = –20 A 64 16 32 48 Gate Charge Qg (nc) 0 1000 500 V GS = –10 V, V DD = –30 V PW = 10 µs, duty < 1 % td(off) 200 tf 100 50 tr Drain to Source Voltage –40 –8 –60 –12 –80 –100 0 –16 –20 80 Gate to Source Voltage Switching Time t (ns) –20 –4 20 td(on) –10 –30 –100 10 –1 –3 –0.1 –0.3 Drain Current I D (A) 5 2SJ552(L),2SJ552(S) Reverse Drain Current vs. Source to Drain Voltage Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) –50 50 I AP = –20 A V DD = –25 V duty < 0.1 % Rg > 50 Ω Reverse Drain Current I DR (A) –40 –10 V –30 –5 V –20 V GS = 0, 5 V 40 30 20 –10 Pulse Test 0 –0.4 –0.8 –1.2 –1.6 –2.0 10 0 25 50 75 100 125 150 Source to Drain Voltage V SD (V) Channel Temperature Tch (°C) Avalanche Test Circuit EAR = Avalanche Waveform 1 2 • L • I AP • 2 VDSS VDSS – V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin –15 V D. U. T 50 Ω 0 VDD 6 2SJ552(L),2SJ552(S) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 1.67 °C/W, Tc = 25 °C PDM PW T 0.03 0.02 1 lse 0.0 t pu o h 1s D= PW T 0.01 10 µ 100 µ 1m 10 m Pulse Width 100 m PW (S) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. RL Vout Monitor Vin 10% Waveform 90% Vin 50 Ω –10 V V DD = –30 V Vout td(on) 90% 10% tr td(off) 90% 10% tf 7 2SJ552(L),2SJ552(S) Package Dimensions Unit: mm (1.4) 10.2 ± 0.3 4.44 ± 0.2 1.3 ± 0.2 11.3 ± 0.5 8.6 ± 0.3 10.0 +0.3 –0.5 (1.4) 10.2 ± 0.3 4.44 ± 0.2 1.3 ± 0.2 (1.5) 11.0 ± 0.5 (1.5) 0.76 ± 0.1 (1.5) 8.6 ± 0.3 10.0 +0.3 –0.5 1.2 ± 0.2 0.86 +0.2 –0.1 1.27 ± 0.2 2.59 ± 0.2 1.27 ± 0.2 0.4 ± 0.1 1.2 ± 0.2 2.54 ± 0.5 0.86 +0.2 –0.1 2.54 ± 0.5 3.0 +0.3 –0.5 0.1 +0.2 –0.1 2.59 ± 0.2 0.4 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 L type S type Hitachi Code EIAJ JEDEC LDPAK — — 8 Cautions 1. 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