2SK1151

2SK1151(L)(S), 2SK1152(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 23 2SK1151(L)(S), 2SK1152(L)(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1151 2SK1152 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 1.5 6 1.5 20 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1151(L)(S), 2SK1152(L)(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1151 V(BR)DSS 2SK1152 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 100 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 0.6 — — — — — — — — — — 3.5 4.0 1.1 160 45 5 5 10 20 10 1.0 220 3.0 5.5 6.0 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 1.5 A, VGS = 0 I F = 1.5 A, VGS = 0, diF/dt = 100 A/µs I D = 1 A, VGS = 10 V, RL = 30 Ω I D = 1 A, VDS = 20 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 1 A, VGS = 10 V *1 Typ — Max — Unit V Test conditions I D = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1151 I DSS 2SK1152 Gate to source cutoff voltage Static Drain to source 2SK1151 RDS(on) on stateresistance 2SK1152 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test 3 2SK1151(L)(S), 2SK1152(L)(S) Power vs. Temperature Derating 30 Channel Dissipation Pch (W) 10 10 Maximum Safe Operation Area O a pe by rea rat R is ion DS lim in (o it n) ted his 3 Drain Current ID (A) 20 1.0 0.3 0.1 0.03 10 D µs 0 1 µs PW = O pe ra tio n C m s s m 10 (1 ) ot Sh 25 (T C 10 = °C ) 2SK1151 Ta = 25°C 2SK1152 0.01 0 50 100 Case Temperature TC (°C) 150 1 10 1,000 100 Drain to Source Voltage VDS (V) Typical Output Characteristics 2.0 Pulse Test 15 V 2.0 5V 6V 10 V 4.5 V 1.2 1.6 Drain Current ID (A) Typical Transfer Characteristics VDS = 20 V Pulse Test 1.6 Drain Current ID (A) 1.2 0.8 4V 0.4 VGS = 3.5 V 0 4 8 12 16 Drain to Source Voltage VDS (V) 20 0.8 75°C 0.4 TC = 25°C 0 2 4 6 8 Gate to Source Voltage VGS (V) 10 –25°C 4 2SK1151(L)(S), 2SK1152(L)(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage 20 Drain to Source Saturation Voltage VDS (on) (V) Pulse Test Static Drain to Source on State Resistance RDS (on) (Ω) 100 50 Pulse Test VGS = 10 V Static Drain to Source on State Resistance vs. Drain Current 16 12 2A 8 1A ID = 0.5 A 0 4 8 12 16 Gate to Source Voltage VGS (V) 20 20 10 5 15 V 4 2 1 0.05 0.1 0.2 0.5 1.0 2 Drain Current ID (A) 5 Static Drain to Source on State Resistance vs. Temperature Static Drain-Source on State Resistance RDS (on) (Ω) 10 ID = 2 A 8 VGS = 10 V Pulse Test Forward Transfer Admittance yfs (S) 5 2 1.0 Forward Transfer Admittance vs. Drain Current VDS = 20 V Pulse Test –25°C 6 1A 0.5 A TC = 25°C 0.5 0.2 0.1 75°C 4 2 0 –40 0 40 80 120 Case Temperature TC (°C) 160 0.05 0.1 0.5 1.0 0.2 2 Drain Current ID (A) 5 5 2SK1151(L)(S), 2SK1152(L)(S) Body to Drain Diode Reverse Recovery Time 1,000 Reverse Recovery Time trr (ns) 500 di/dt = 100A/µs, Ta = 25°C VGS = 0 Pulse Test 1,000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss 100 Coss 10 200 100 50 20 10 0.05 1 0 Capacitance C (pF) Crss 0.1 0.2 0.5 1.0 2 Reverse Drain Current IDR (A) 5 10 20 30 40 Drain to Source Voltage VDS (V) 50 Dynamic Input Characteristics 500 100 V Drain to Source Voltage VDS (V) 250 V 400 VDS 400 V 16 Gate to Source Voltage VGS (V) 50 Switching Time t (ns) 20 100 Switching Characteristics VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1% • • td (off) 20 tf 10 5 td (on) tr 2 1 0.05 300 VGS 200 VDD = 400 V 250 V 100 V 2 ID = 1.5 A 12 8 100 4 0 4 6 8 Gate Charge Qg (nc) 0 10 0.1 0.2 0.5 1.0 2 Drain Current ID (A) 5 6 2SK1151(L)(S), 2SK1152(L)(S) Reverse Drain Current vs. Source to Drain Voltage 2.0 Reverse Drain Current IDR (A) 1.6 Pulse Test 1.2 0.8 0.4 5 V,10 V VGS=0, –10V 0 0.4 0.8 1.2 1.6 Source to Drain Voltage VSD (V) 2.0 Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 1.0 TC = 25°C 0.05 0.02 θch–c(t) = γS (t) · θch–c θch–c = 6.25°C/W, TC = 25°C PDM D = PW T 0.03 ls 0.01 ot Pu Sh 1 e PW T 1m 10 m 100 m Pulse Width PW (s) 1 0.01 10 µ 100 µ 10 Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vin Vout 50 Ω Vin = 10 V . VDD = 30 V . td (on) 90 % tr 90 % td (off) tf 10 % 10 % 10 % Wavewforms 90 % 7 Unit: mm 6.5 ± 0.5 5.4 ± 0.5 1.7 ± 0.5 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 1.2 ± 0.3 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 16.2 ± 0.5 2.29 ± 0.5 2.29 ± 0.5 0.55 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) DPAK (L)-(1) — Conforms 0.42 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: (408) 433-1990 Fax: (408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.