2SK1157

2SK1157, 2SK1158 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1157, 2SK1158 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1157 2SK1158 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 7 28 7 60 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1157, 2SK1158 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1157 V(BR)DSS 2SK1158 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 4.0 — — — — — — — — — — 0.6 0.7 6.5 1050 280 40 15 55 95 40 0.95 320 3.0 0.8 0.9 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 7 A, VGS = 0 I F = 7 A, VGS = 0, diF/dt = 100 A/µs I D = 4 A, VGS = 10 V, RL = 7.5 Ω I D = 4 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 4 A, VGS = 10 V *1 Typ — Max — Unit V Test conditions I D = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1157 I DSS 2SK1158 Gate to source cutoff voltage Static Drain to source 2SK1157 RDS(on) on state resistance 2SK1158 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test 3 2SK1157, 2SK1158 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) 50 ea Maximum Safe Operation Area 10 0 µs 20 O is per Lim at ite ion d in by th R is Drain Current ID (A) DS 10 5 2 1.0 0.5 0.2 0.1 (o n) 10 PW C O pe ra µs Ar 40 D = 1 10 (T m s s sh °C m tio n (1 25 20 C ot = ) ) Ta = 25°C 1 0.05 0 50 100 Case Temperature TC (°C) 150 2SK1157 2SK1158 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 20 10 V 16 Pulse Test 12 5V 7V 6V 16 Drain Current ID (A) 20 Typical Transfer Characteristics –25°C VDS = 20 V Pulse Test TC = 25°C Drain Current ID (A) 12 75°C 8 8 4 VGS = 4 V 0 10 30 40 20 Drain to Source Voltage VDS (V) 50 4 0 2 6 8 4 10 Gate to Source Voltage VGS (V) 4 2SK1157, 2SK1158 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) (Ω) 10 Pulse Test 10 A 6 5 Pulse Test VGS = 10 V Static Drain to Source on State Resistance vs. Drain Current 8 2 1.0 0.5 15 V 4 5A 2 ID = 2 A 0.2 0.1 0.05 0.5 0 4 12 16 8 Gate to Source Voltage VGS (V) 20 1.0 10 2 5 20 Drain Current ID (A) 50 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) (Ω) VGS = 10 V Pulse Test Forward Transfer Admittance yfs (S) 2.0 50 Forward Transfer Admittance vs. Drain Current VDS = 20 V Pulse Test 1.6 20 10 5 –25°C TC = 25°C 75°C 1.2 ID = 10 A 0.8 2, 5 A 2 1.0 0.5 0.1 0.4 0 –40 0 80 120 40 Case Temperature TC (°C) 160 0.2 0.5 1.0 2 Drain Current ID (A) 5 10 5 2SK1157, 2SK1158 Body to Drain Diode Reverse Recovery Time 5,000 Reverse Recovery Time trr (ns) di/dt = 100 A/µs, Ta = 25°C VGS = 0 Pulse Test Typical Capacitance vs. Drain to Source Voltage 5,000 VGS = 0 f = 1 MHz 2,000 1,000 500 200 100 50 0.2 Capacitance C (pF) 1,000 Ciss Coss 100 10 5 0.5 1.0 2 5 10 Reverse Drain Current IDR (A) 20 0 Crss 20 10 30 40 Drain to Source Voltage VDS (V) 50 Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) 20 Gate to Source Voltage VGS (V) Switching Characteristics 500 VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1% • • Switching Time t (ns) 400 VDS 300 VDD = 100 V 250 V 400 V VGS 16 200 td (off) 100 50 tr tf td (on) 12 200 ID = 7 A 100 VDD = 400 V 250 V 100 V 8 24 32 16 Gate Charge Qg (nc) 40 8 20 10 5 0.2 4 0 0 0.5 5 1.0 2 Drain Current ID (A) 10 20 6 2SK1157, 2SK1158 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 12 8 4 5, 10 V VGS = 0, –10 V 0 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.03 θch–c (t) = γS (t) · θch–c θch–c = 2.08°C/W, TC = 25°C PDM PW 1 D = PW T 1 0.01 10 µ 0.01 ulse P ot Sh 100 µ 1m 10 m Pulse Width PW (s) 100 m T 10 Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vin Vout 50 Ω Vin = 10 V . VDD = 30 V . td (on) 90 % tr 90 % td (off) tf 10 % 10 % 10 % Wavewforms 90 % 7 Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 -0.08 +0.1 4.44 ± 0.2 1.26 ± 0.15 6.4 +0.2 –0.1 18.5 ± 0.5 15.0 ± 0.3 1.27 2.7 MAX 14.0 ± 0.5 1.5 MAX 7.8 ± 0.5 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220AB Conforms Conforms 1.8 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: (408) 433-1990 Fax: (408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.