2SK1296

2SK1296 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 1 2 3 1 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 60 ±20 30 120 30 75 150 –55 to +150 Unit V V A A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 2SK1296 Table 2 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 60 Typ — Max — Unit V Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 V * ——————————————————————————————————————————— ——————————————————————————————————————————— ±20 — — V ——————————————————————————————————————————— — — 1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 17 — — — — — — — — — — — 0.024 0.030 27 2250 1230 300 20 125 390 225 1.3 ±10 250 2.0 0.028 0.040 — — — — — — — — — S pF pF pF ns ns ns ns V IF = 30 A, VGS = 0 IF = 30 A, VGS = 0, diF/dt = 50 A/µs ID = 15 A, VGS = 10 V, RL = 2 Ω µA µA V Ω ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————— ——————————– ID = 15 A, VGS = 4 V * ID = 15 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz ——————————————————————————————————————————— ——————————————————————————————————————————— ———————————————————————————————— ———————————————————————————————— ——————————————————————————————————————————— ———————————————————————————————— ———————————————————————————————— ———————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— — 160 — ns ——————————————————————————————————————————— 2SK1296 Power vs. Temperature Derating 150 Channel Dissipation Pch (W) Maximum Safe Operation Area 500 200 10 Drain Current ID (A) 100 50 20 10 5 2 1.0 PW µs 10 0 100 µs 1 = s m D C 10 O m pe s ra (1 50 tio Operation in this area is limited by RDS (on) Ta = 25°C n Sh (T ot ) C = 25 °C ) 0 50 100 Case Temperature TC (°C) 150 0.5 0.1 100 0.3 1.0 3 10 30 Drain to Source Voltage VDS (V) Typical Output Characteristics 50 15 V 4V 5V 10 V 50 3.5 V Drain Current ID (A) Pulse Test 40 Typical Transfer Characteristics VDS = 10 V Pulse Test 40 Drain Current ID (A) 30 3V 20 VGS = 2.5 V 30 20 75°C TC = 25°C 10 10 –25°C 0 6 2 4 8 10 Drain to Source Voltage VDS (V) 0 3 1 2 4 Gate to Source Voltage VGS (V) 5 2SK1296 Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) (Ω) 2.0 Drain to Source Saturation Voltage VDS (on) (V) 1.6 Pulse Test ID = 50 A 1.2 0.5 0.2 0.1 Static Drain to Source on State Resistance vs. Drain Current Pulse Test VGS = 4 V 0.05 0.02 0.01 0.005 2 5 10 20 50 100 Drain Current ID (A) 200 10 V 0.8 20 A 0.4 10 A 0 6 2 4 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance yfs (S) 0.05 ID = 20 A 5 A,10 A VGS = 4 V 20 A 5 A,10 A VGS = 10 V 50 20 10 5 2 1.0 Forward Transfer Admittance vs. Drain Current –25°C TC = 25°C 75°C 0.04 0.03 0.02 0.01 Pulse Test VDS = 10 V Pulse Test 0 –40 0 40 120 80 Case Temperature TC (°C) 160 0.5 1.0 20 2 10 5 Drain Current ID (A) 50 2SK1296 Body to Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) di/dt = 50 A/µs, Ta = 25°C VGS = 0 Pulse Test 10000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss Capacitance C (pF) 1000 Coss 500 200 100 50 Crss 100 20 10 0.5 10 2 1.0 5 10 20 Reverse Drain Current IDR (A) 50 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 100 Drain to Source Voltage VDS (V) 80 VDD = 100 V 25 V 50 V VGS 20 Gate to Source Voltage VGS (V) 16 500 Switching Characteristics td (off) 200 Switching Time t (ns) 100 50 td (on) VGS = 10 V PW = 2 µs, duty < 1 % 1.0 5 2 10 20 Drain Current ID (A) 50 tf tr 60 VDS 40 20 12 8 4 ID = 30 A 0 200 20 10 5 0.5 VDD = 50 V 25 V 10 V 0 40 80 120 160 Gate Charge Qg (nc) 2SK1296 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current IDR (A) 40 Pulse Test 30 10 V 5V 20 10 VGS = 0, –5 V 0 0.4 1.2 0.8 2.0 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 D=1 0.5 0.3 0.1 TC = 25°C 0.2 0.1 0.05 0.02 0.01 hot P 1S θch–c (t) = γs (t) · θch–c θch–c = 1.67°C/W, TC = 25°C PDM 0.03 0.01 10 µ uls e T PW 1 D =PW T 100 µ 1m 10 m Pulse Width PW (s) 100 m 10 2SK1296 Switching Time Test Circuit Vin Monitor Wavewforms 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 90 % tr 90 % td (off) 10 % 50 Ω Vin = 10 V . VDD = 30 V . td (on) tf