2SK1299S

2SK1299(L), 2SK1299(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 23 2SK1299(L), 2SK1299(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 100 ±20 3 12 3 20 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1299(L), 2SK1299(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 100 ±20 — — 1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2.4 — — — — — — — — — Typ — — — — — 0.25 0.30 4.0 400 165 45 5 35 160 60 1.0 135 Max — — ±10 100 2.0 0.35 0.45 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 3 A, VGS = 0 I F = 3 A, VGS = 0, diF/dt = 50 A/µs I D = 2 A, VGS = 10 V, RL = 15 Ω Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 80 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 2 A, VGS = 10 V *1 I D = 2 A, VGS = 4 V 1* I D = 2 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static Drain to source on state resistance VGS(off) RDS(on) 3 2SK1299(L), 2SK1299(S) Power vs. Temperature Derating 30 Channel Dissipation Pch (W) Maximum Safe Operation Area 50 Operation in this area 20 is limited by RDS (on) 10 Drain Current ID (A) 10 µs 0 10 20 5 2 1 0.5 0.2 0.1 0.05 PW µs = 10 1 m m s s n tio ra C) pe ° O 25 C= D TC ( (1 10 Sh ot ) Ta = 25°C 1 2 5 10 20 50 100 200 500 1000 Drain to Source Voltage VDS (V) 0 50 100 Case Temperature TC (°C) 150 Typical Output Characteristics 10 10 V 5V 4.5 V 4V 4 3.5 V Drain Current ID (A) 5 Typical Transfer Characteristics VDS = 10 V Pulse Test 8 Drain Current ID (A) 6 3 4 3V VGS = 2.5 V Pulse Test 2 2 1 25°C 75°C TC = –25°C 0 2 4 6 8 10 Drain to Source Voltage VDS (V) 0 3 1 2 4 Gate to Source Voltage VGS (V) 5 4 2SK1299(L), 2SK1299(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) (Ω) 2.0 Drain to Source Saturation Voltage VDS (on) (V) Pulse Test 1.6 ID = 5 A 1.2 5 Pulse Test 2 1 0.5 VGS = 4 V 0.2 0.1 0.05 0.2 10 V Static Drain to Source on State Resistance vs. Drain Current 0.8 2A 0.4 1A 0 6 2 4 8 10 Gate to Source Voltage VGS (V) 0.5 1 5 2 10 Drain Current ID (A) 20 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance yfs (S) 0.5 ID = 5 A 2A 1A 5A 1A 0.2 10 V 2A 10 Forward Transfer Admittance vs. Drain Current VDS = 10 V 5 Pulse Test TC = –25°C 0.4 VGS = 4 V 0.3 2 75°C 1 0.5 25°C 0.1 Pulse Test 0 –40 0 40 120 80 Case Temperature TC (°C) 160 0.2 0.1 0.05 1.0 2 0.2 1 0.5 Drain Current ID (A) 5 5 2SK1299(L), 2SK1299(S) Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) 200 Capacitance C (pF) 100 50 100 Coss 1000 Ciss Typical Capacitance vs. Drain to Source Voltage Crss 10 VGS = 0 f = 1 MHz 1 0 10 20 30 40 50 Drain to Source Voltage VDS (V) 20 10 5 0.1 di/dt = 50 A/µs VGS = 0, Ta = 25°C Pulse Test 0.2 1 0.5 2 5 Reverse Drain Current IDR (A) 10 Dynamic Input Characteristics 200 Drain to Source Voltage VDS (V) 160 VDD = 80 V 50 V 25 V VGS VDS 20 Gate to Source Voltage VGS (V) 16 500 Switching Characteristics Switching Time t (ns) 200 100 50 tf tr 20 10 td (on) 5 0.1 0.2 td (off) 120 12 80 40 8 4 VDD = 25 V 50 V 80 V 8 ID = 3 A VGS = 10 V, VDD = 30 V . PW = 2µs, duty < 0.1 % 5 10 . 0 16 24 32 Gate Charge Qg (nc) 0 40 0.5 1 2 Drain Current ID (A) 6 2SK1299(L), 2SK1299(S) Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current IDR (A) Pulse Test 8 6 5V 4 2 VGS = 10 V VGS = 0, – 5 V 0 0.8 0.4 1.2 2.0 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 TC = 25°C 0.02 01 Pulse 0.03 0. hot 1S θch–c (t) = γs (t) · θch–c θch–c = 6.25°C/W, TC = 25°C PDM T 100 µ 1m 10 m Pulse Width PW (s) 100 m PW 1 D =PW T 10 0.01 10 µ Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vin Vout 50 Ω Vin = 10 V . VDD = 30 V . td (on) 90 % tr 90 % td (off) tf 10 % 10 % 10 % Wavewforms 90 % 7 Unit: mm 6.5 ± 0.5 5.4 ± 0.5 1.7 ± 0.5 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 1.2 ± 0.3 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 16.2 ± 0.5 2.29 ± 0.5 2.29 ± 0.5 0.55 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) DPAK (L)-(1) — Conforms 0.42 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.