2SK1404

2SK1404 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220FM D G 1 23 1. Gate 2. Drain 3. Source S 2SK1404 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 600 ±30 5 20 5 35 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1404 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 600 ±30 — — 2.0 — 3.0 — — — — — — — — — Typ — — — — — 1.1 5.0 1000 250 45 12 45 105 55 0.9 500 Max — — ±10 250 3.0 1.5 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 5 A, VGS = 0 I F = 5 A, VGS = 0, diF/dt = 100 A/µs I D = 2.5 A, VGS = 10 V, RL = 12 Ω Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 500 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 2.5 A, VGS = 10 V *1 I D = 2.5 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK1404 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) 50 30 Drain Current ID (A) 10 3 1 0.3 0.1 0.05 0 50 100 Case Temperature TC (°C) 150 1 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Ta = 25°C ea Maximum Safe Operation Area 10 ar O is per lim at ite ion d in by th R is 40 DS 10 µs (o n) 0 1 µs PW = pe O ra tio n D C m s 10 s m (1 20 Sh ot ) = 25 °C ) Typical Output Characteristics 10 10 V 8 Drain Current ID (A) 6V 5V Drain Current ID (A) Pulse Test 8 4.5 V 10 Typical Transfer Characteristics VDS = 20 V Pulse Test (T C 6 6 4 4V VGS = 3 V 0 3.5 V 4 2 2 TC = 75°C 25°C –25°C 10 30 40 20 50 Drain to Source Voltage VDS (V) 0 2 6 8 4 10 Gate to Source Voltage VGS (V) 4 2SK1404 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 Pulse Test 8 ID = 5 A Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance RDS (on) (Ω) 50 Pulse Test 20 10 5 2 1 15 V 0.5 0.2 0.5 1 2 5 10 Drain Current ID (A) 20 VGS = 10 V 6 4 2A 2 1A 0 8 20 4 12 16 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance yfs (S) 5 VGS = 10 V Pulse Test 10 Forward Transfer Admittance vs. Drain Current VDS = 20 V Pulse Test 5 2 1 0.5 0.2 0.1 0.05 75°C –25°C TC = 25°C 4 3 ID = 5 A 2 1A 2A 1 0 –40 40 0 80 120 Case Temperature TC (°C) 160 0.1 2 0.2 0.5 1 Drain Current ID (A) 5 5 2SK1404 Body to Drain Diode Reverse Recovery Time 1,000 Reverse Recovery Time trr (ns) 500 Capacitance C (pF) 1,000 10,000 VGS = 0 f = 1 MHz Ciss Typical Capacitance vs. Drain to Source Voltage 200 100 50 20 10 0.05 di/dt = 50 A/µs, Ta = 25°C VGS = 0 Pulse Test 0.1 0.2 2 1 0.5 Reverse Drain Current IDR (A) 5 100 Coss Crss 10 0 20 50 10 30 40 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 1,000 Drain to Source Voltage VDS (V) 20 Gate to Source Voltage VGS (V) Switching Characteristics 500 . . VGS = 10 V, VDD = 30 V PW = 2 µs, duty < 0.1% td (off) 100 50 tr td (on) 10 5 0.1 tf VDD = 100 V 250 V 400 V VGS 600 12 400 VDS ID = 5 A VDD = 400 V 250 V 100 V 8 Switching Time t (ns) 800 16 200 20 200 4 0 0 8 24 32 16 Gate Charge Qg (nc) 40 0.2 2 5 0.5 1 Drain Current ID (A) 10 6 2SK1404 Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current IDR (A) Pulse Test 8 6 4 VGS = 5 V, 10 V 2 0, –5 V 0 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 1.0 0.5 0.3 0.2 TC = 25°C 0.1 0.1 0.05 θch–c (t) = γS (t) · θch–c θch–c = 3.57°C/W, TC = 25°C PDM PW D = PW T 0.03 0.02 0.01 ulse P hot 1S 100 µ 1m 10 m 100 m Pulse Width PW (s) T 0.01 10 µ 1 10 Switching Time Test Circuit Vin Monitor Waveforms 90% Vout Monitor D.U.T. RL Vin 10 V 50 Ω Vin Vout VDD . = 30 V . td (on) 10% 10% 10% 90% td (off) 90% tr tf 7 10.0 ± 0.3 7.0 ± 0.3 φ 3.2 ± 0.2 2.8 ± 0.2 2.5 ± 0.2 Unit: mm 0.6 5.0 ± 0.3 2.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 12.0 ± 0.3 4.45 ± 0.3 2.5 14.0 ± 1.0 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220FM — Conforms 1.8 g 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 17.0 ± 0.3 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.