2SK1518

2SK1517, 2SK1518 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1517, 2SK1518 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1517 2SK1518 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 20 80 20 120 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1517, 2SK1518 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1517 V(BR)DSS 2SK1518 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 10 — — — — — — — — — — 0.20 0.22 16 3050 940 140 35 130 240 105 1.0 120 3.0 0.25 0.27 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 20 A, VGS = 0 I F = 20 A, VGS = 0, diF/dt = 100 A/µs I D = 10 A, VGS = 10 V, RL = 3 Ω I D = 10 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 10 A, VGS = 10 V *1 Typ — Max — Unit V Test conditions I D = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1517 I DSS 2SK1518 Gate to source cutoff voltage Static Drain to source 2SK1517 RDS(on) on state resistance 2SK1518 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test 3 2SK1517, 2SK1518 Power vs. Temperature Derating 150 Channel Dissipation Pch (W) 100 O is per lim at ite ion d in by th R is ar DS ea (o n Maximum Safe Operation Area 30 Drain Current ID (A) 100 10 3 1 0.3 D C PW O pe 10 = 1 10 n m s m s 10 0 µs ) µs ra tio (T (1 = C 50 Sh ot 25 ) °C ) Ta = 25°C 0.1 0 50 100 Case Temperature TC (°C) 150 1 2SK1518 2SK1517 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 50 10 V 40 Drain Current ID (A) Pulse Test 30 Drain Current ID (A) 7V 6V 16 20 Typical Transfer Characteristics VDS = 20 V Pulse Test 12 20 5V 8 75°C 25°C TC = – 25°C 10 VGS = 4 V 0 10 30 40 20 50 Drain to Source Voltage VDS (V) 4 0 2 6 8 4 10 Gate to Source Voltage VGS (V) 4 2SK1517, 2SK1518 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) (Ω) 10 Pulse Test 5 Static Drain to Source on State Resistance vs. Drain Current 8 2 1 0.5 Pulse Test 6 20 A 4 10 A 2 ID = 5 A VGS = 10 V 15 V 0.2 0.1 0.05 1 2 0 4 12 16 8 20 Gate to Source Voltage VGS (V) 5 10 20 50 Drain Current ID (A) 100 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) (Ω) Pulse Test VGS = 10 V 0.8 Forward Transfer Admittance yfs (S) 1.0 5 Forward Transfer Admittance vs. Drain Current VDS = 20 V Pulse Test –25°C TC = 25°C 75°C 2 1 0.5 0.6 ID = 20 A 0.4 10 A 5A 0.2 0.2 0.1 0.05 0.2 0 –40 0 80 120 40 Case Temperature TC (°C) 160 0.5 1 2 5 Drain Current ID (A) 10 20 5 2SK1517, 2SK1518 Body to Drain Diode Reverse Recovery Time 5,000 Reverse Recovery Time trr (ns) di/dt = 100 A/µs, Ta = 25°C VGS = 0 Pulse Test 10,000 Ciss Capacitance C (pF) VGS = 0 f = 1 MHz Typical Capacitance vs. Drain to Source Voltage 2,000 1,000 500 1,000 Coss 200 100 50 0.5 100 Crss 10 1 2 5 10 20 Reverse Drain Current IDR (A) 50 0 20 10 30 40 Drain to Source Voltage VDS (V) 50 Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) VDD = 100 V 250 V 400 V VDS 300 VGS 20 500 Switching Characteristics td (off) Switching Time t (ns) 200 100 50 tf tr 400 16 12 td (on) 200 VDD = 400 V 250V 100 V ID = 20 A 8 20 VGS = 10 V VDD = 30 V 10 PW = 2 µs, duty < 1% • • 100 4 0 40 120 160 80 Gate Charge Qg (nc) 0 200 5 0.5 1 2 5 10 20 Drain Current ID (A) 50 6 2SK1517, 2SK1518 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) 16 Pulse Test 12 5V 8 10 V 4 VGS = 0, –10 V 0 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 θch–c (t) = γS (t) · θch–c θch–c = 1.08°C/W, TC = 25°C PDM TC = 25°C 1.0 0.05 0.02 0.03 0.01 ho 1S tP ulse T 100 µ 1m 10 m Pulse Width PW (s) 100 m PW 1 D = PW T 0.01 10 µ 10 Switching Time Test Circuit Waveforms Vin Monitor Vout Monitor D.U.T RL Vout 50 Ω Vin 10 V VDD . = 30 V . td (on) 90% tr 90% td (off) tf 10% 10% Vin 10% 90% 7 Unit: mm 5.0 ± 0.3 15.6 ± 0.3 1.0 φ3.2 ± 0.2 4.8 ± 0.2 1.5 0.5 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 18.0 ± 0.5 1.0 ± 0.2 2.0 0.6 ± 0.2 3.6 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P — Conforms 5.0 g 0.3 Cautions 1. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.