2SK1618L

2SK1618(L), 2SK1618(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline LDPAK 4 4 12 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK1618(L), 2SK1618(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 600 ±30 3 6 3 30 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1618(L), 2SK1618(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 600 ±30 — — 2.0 — 1.2 — — — — — — — — — Typ — — — — — 3.8 2.0 295 70 12 8 25 65 30 0.9 220 Max — — ±10 250 3.0 5.0 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 2 A, VGS = 0 I F = 2 A, VGS = 0, diF/dt = 100 A/µs I D = 1 A, VGS = 10 V, RL = 30 Ω Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 500 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 1 A, VGS = 10 V *1 I D = 1 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr See characteristic curves of 2SK1572. 3 2SK1618(L), 2SK1618(S) Power vs. Temperature Derating 60 Channel Dissipation Pch (W) 10 5 Drain Current ID (A) 2 1 0.5 0.2 0.1 0.05 0.02 Ta = 25°C 0.01 0 50 100 Case Temperature TC (°C) 150 1 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Maximum Safe Operation Area 10 µs 10 0 PW µs = 10 m s (1 Sh ot Pu lse ) ar n) O is per lim at ite ion d in by th R is ea 1 DS (o m D s C 40 pe O t ra io n = (T C 25 20 °C ) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 θch–c (t) = γS (t) · θch–c θch–c = 4.17°C/W, TC = 25°C PDM se 1.0 TC = 25°C 0.05 0.02 ul 1 0.0 hot P 1S 0.03 T 100 µ 1m 10 m Pulse Width PW (s) 100 m PW 1 D = PW T 0.01 10 µ 10 4 Unit: mm 10.2 ± 0.3 (1.4) 4.44 ± 0.2 1.3 ± 0.2 + 0.3 – 0.5 11.3 ± 0.5 8.6 ± 0.3 10.0 1.27 ± 0.2 0.2 0.86 + 0.1 – 0.76 ± 0.1 2.54 ± 0.5 11.0 ± 0.5 1.2 ± 0.2 2.59 ± 0.2 2.54 ± 0.5 0.4 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) LDPAK (L) — — 1.4 g Cautions 1. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.