2SK1629

2SK1628, 2SK1629 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1628, 2SK1629 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1628 2SK1629 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 30 120 30 200 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1628, 2SK1629 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol 2SK1628 V(BR)DSS 2SK1629 V(BR)GSS I GSS Min 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 12 — — — — — — — — — — 0.20 0.22 20 2800 780 90 32 140 200 100 1.1 600 3.0 0.25 0.27 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 30 A, VGS = 0 I F = 30 A, VGS = 0, diF/dt = 100 A/µs I D = 15 A, VGS = 10 V, RL = 2 Ω I D = 15 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 15 A, VGS = 10 V *1 Typ — Max — Unit V Test conditions I D = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1628 I DSS 2SK1629 Gate to source cutoff voltage Static Drain to source 2SK1628 RDS(on) on state resistance 2SK1629 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test See characteristics curves of 2SK1169, 2SK1170 3 2SK1628, 2SK1629 Power vs. Temperature Derating 300 Channel Dissipation Pch (W) 500 200 Maximum Safe Operation Area ar ea Drain Current ID (A) 200 50 20 10 5 2 1 0.5 O i s pe lim ra ite tion d in by t R hi s D S (o n) 100 DC PW 1 1 10 0 µ 0s µs m s Op = er 100 ati 10 C on m s (T (1 = 25 Sh Ta = 25°C °C ot ) ) 2SK1628 2SK1629 1 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) 0 50 100 Case Temperature TC (°C) 150 Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θch–c (t) = γS (t) · θch–c θch–c = 0.625°C/W, TC = 25°C PDM °C/W PW D = PW T 0.02 0.03 1 0.01 10 µ 0.01 lse t Pu Sho T 100 µ 1m 10 m Pulse Width PW (s) 100 m 1 10 4 Unit: mm 6.0 ± 0.2 5.0 ± 0.2 φ3.3 ± 0.2 20.0 ± 0.3 26.0 ± 0.3 20.0 ± 0.6 2.5 ± 0.3 1.4 3.0 2.2 1.2 +0.25 –0.1 5.45 ± 0.5 1.0 0.6 +0.25 –0.1 2.8 ± 0.2 5.45 ± 0.5 3.8 7.4 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3PL — — 9.9 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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