2SK168

2SK168 Silicon N-Channel Junction FET Application VHF Amplifier, Mixer, Local oscillator Outline TO-92 (2) 1. Gate 2. Source 3. Drain 3 2 1 2SK168 Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain voltage Gate to source voltage Gate current Drain current Channel power dissipation Channel temperature Storage temperature Symbol VGDO VGSS IG ID Pch Tch Tstg Ratings –30 –1 10 20 200 150 –55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Gate to drain breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure Note: D 4 to 8 Symbol V(BR)GDO I GSS I DSS* 1 Min –30 — 4 — 8 — — — — Typ — — — — 10 6.8 0.1 27 1.7 Max — –10 20 –3.0 — — — — — Unit V nA mA V mS pF pF dB dB Test conditions I G = –100 µA, IS = 0 VGS = –0.5 V, VDS = 0 VDS = 5 V, VGS = 0 VDS = 5 V, ID = 10 µA VDS = 5 V, VGS = 0, f = 1 kHz VDS = 5 V, VGS = 0, f = 1 MHz VDS = 5 V, VGS = 0, f = 1 MHz VDS = 5 V, VGS = 0, f = 100 MHz VDS = 5 V, VGS = 0, f = 100 MHz VGS(off) |yfs| Ciss Crss PG NF 1. The 2SK168 is grouped by I DSS as follows. E 6 to 12 F 10 to 20 2 2SK168 Maximum Channel Power Dissipation Curve Channel Power Dissipation Pch (mW) 300 Typical Output Characteristics (1) 10 VGS = 0 Drain Current ID (mA) 8 –0.2 V 6 –0.4 4 –0.6 2 –0.8 –1.0 0 30 40 10 20 Drain to Source Voltage VDS (V) 50 Pc h = 200 20 0 m W 100 0 100 150 50 Ambient Temperature Ta (°C) Typical Output Characteristics (2) 10 VGS = 0 Drain Current ID (mA) Drain Current ID (mA) 8 –0.2 V 6 –0.4 4 –0.6 2 –0.8 –1.0 3 4 1 2 Drain to Source Voltage VDS (V) 5 15 Typical Transfer Characteristics VDS = 5 V 10 F 5 E D 0 –3.0 0 –2.0 –1.0 Gate to Source Voltage VGS (V) 0 3 2SK168 Forward Transfer Admittance vs. Drain to Source Voltage Forward Transfer Admittance yfs (mS) 15 Forward Transfer Admittance yfs (mS) Ta = –25°C 25°C 10 75°C 50 20 10 5 2 1.0 0.5 0.2 VDS = 5 V f = 1 kHz Forward Transfer Admittance vs. Drain Current 5 VGS = 0 f = 1 kHz 0 10 5 Drain to Source Voltage VDS (V) 15 5 10 0.5 1.0 2 Drain Current ID (mA) 20 20 Input Capacitance Ciss (pF) VGS = 0 f = 1 MHz 10 Reverse Transfer Capacitance Crss (pF) Input Capacitance vs. Drain to Source Voltage Reverse Transfer Capacitance vs. Drain to Source Voltage 5 VGS = 0 f = 1 MHz 2 1.0 0.5 5 0.2 0.1 0.05 0.1 2 0.1 2 5 10 0.2 0.5 1.0 Drain to Source Voltage VDS (V) 2 5 0.2 0.5 1.0 Drain to Source Voltage VDS (V) 10 4 2SK168 Output Capacitance vs. Drain to Source Voltage 200 Output Capacitance Coss (pF) 100 50 VGS = 0 f = 1 MHz Power Gain PG (dB) 20 VGS = 0 f = 100 MHz 10 30 Power Gain vs. Drain to Source Voltage 20 10 5 2 0.1 0.2 0.5 1.0 2 5 Drain to Source Voltage VDS (V) 10 0 10 5 Drain to Source Voltage VDS (V) 15 Power Gain vs. Drain Current 30 E Power Gain PG (dB) D 20 F Noise Figure NF (dB) 6 8 Noise Figure vs. Drain to Source Voltage VGS = 0 f = 100 MHz 4 10 VDS = 5 V f = 100 MHz VGS Variable 2 0 2 4 6 8 10 12 14 Drain Current ID (mA) 16 0 4 8 12 Drain to Source Voltage VDS (V) 16 5 2SK168 Input and Output Admittance vs. Frequency yis = gis+jbis yos = gos+jbos VDS = 5 V ID = 10 mA gis bis×10 bos×10 gos Forward Transfer Admittance yfs (mS) Reverse Transfer Admittance yrs (mS) 5 Input Admittance yis (mS) Output Admittance yos (mS) 2 1.0 0.5 50 VDS = 5 V ID = 10 mA gfs 10 5 yfs = gfs+jbfs yrs = grs+jbfs –bfs –10 brs 10 grs Transfer Admittance vs. Frequency 20 0.2 0.1 0.05 50 2 1.0 0.5 50 100 200 Frequency f (MHz) 500 100 200 Frequency f (MHz) 500 Input and Output Admittance vs. Drain Current Forward Transfer Admittance yfs (mS) Reverse Transfer Admittance yrs (mS) 5 Input Admittance yis (mS) Output Admittance yos (mS) bos 2 1.0 0.5 VDS = 5 V f = 100 MHz yis = gis+jbis yos = gos+jbos gis bis×10 50 Transfer Admittance vs. Drain Current VDS = 5 V f = 100 MHz gfs 10 5 –bfs –100 brs 2 100 grs 1.0 0.5 0.5 yfs = gfs+jbfs yrs = grs+jbrs 1.0 2 5 10 20 Drain Current ID (mA) 50 20 0.2 0.1 0.05 0.5 gos is Negligible Small at This Frequency 1.0 2 5 10 20 Drain Current ID (mA) 50 6 2SK168 Power Gain and Noise Figure Test Circuit Shield 5.4 50 SG Output Impedance C1 S.G. L1 D.U.T. 3.0 L2 4,700 50 1,000 V.V C2 VDD Unit R : Ω C : pF C1, C2 : 0 to 30 pF Variable Air L1 : 3.5 T 1 mmφ Copper Ribbon, Tin plated 10 mm Inside dia. L2 : 4.5 T 1 mmφ Copper Ribbon, Tin plated 10 mm Inside dia. 7 Unit: mm 4.8 ± 0.3 3.8 ± 0.3 2.3 Max 0.45 ± 0.1 0.7 0.60 Max 12.7 Min 5.0 ± 0.2 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (2) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. 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