2SK1835

2SK1835 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • High breakdown voltage (VDSS = 1500V) High speed switching Low drive current No secondary breakdown Suitable for switchingregulator Outline and Equivalent Circuit TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1835 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 1500 ±20 4 10 4 125 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1835 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Symbol V(BR)DSS I GSS Min 1500 — — 2.0 — 0.9 — — — — — — — — — Typ — — — — 4.6 1.4 1700 230 100 25 80 230 80 0.85 2500 Max — ±1 500 4.0 7.0 — — — — — — — — — — Unit V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 4 A, VGS = 0 I F = 4 A, VGS = 0, diF / dt = 100 A / µs Test Conditions I D = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 1200 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 2 A VGS = 15 V*1 ID = 2 A VDS = 20V*1 VDS = 10 V VGS = 0 f = 1 MHz I D = 2A VGS = 10 V RL = 15 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK1835 Maximum Safe Operation Area Power vs. Temperature Derating 200 50 30 µs s 10 0 µ 10 s m 1 10 Pch (W) 150 Drain Current I D (A) 3 1 D C PW O pe ra Channel Dissipation = n 10 (T 100 tio m s (1 c = sh 0.3 50 Operation in this area is ilmited by R DS (on) Ta = 25°C 25 ot ) °C ) 0.1 0.05 10 0 50 100 Case Temperature 150 Tc (°C) 200 30 100 300 1000 3000 10000 Drain to Source Voltage VDS (V) Typical Output Characteristics 5 10 V Pulse Test 4 Drain Current I D (A) Drain Current I D (A) 6V 3 8V 4 5 Typical Transfer Characteristics Tc = –25°C VDS = 20 V Pulse Test 25°C 3 75°C 2 5V 2 1 V GS = 4 V 1 0 10 20 30 40 50 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 4 2SK1835 Drain to Source Saturation Voltage vs. Gate to Source Voltage 25 Pulse Test Drain to Source Saturation Voltage V DS (on) (V) 20 Static Drain–Source on State Resistance R DS (on) ( Ω) 20 10 5 15 V Pulse Test VGS = 10 V 50 Static Drain to Source on State Resistance vs. Drain Current 15 3A 10 2A 2 1 0.5 0.2 5 ID = 1 A 0 4 8 12 16 20 0.5 1 2 5 10 20 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature 25 10 Pulse Test V GS = 15 V 5 Forward Transfer Admittance |yfs| (S) Forward Transfer Admittance vs. Drain Current Static Drain–Source on State Resistance R DS (on) (Ω ) 20 Pulse Test V DS = 20 V Tc = –25°C 15 ID= 3 A 10 2A 5 1A 2 1 25°C 75°C 0.5 0.2 0 –40 0.1 0.05 0 40 80 120 160 0.1 0.2 0.5 1 2 5 Case Temperature T C (°C) Drain Current I D (A) 5 2SK1835 Body to Drain Diode Reverse Recovery Time 5000 10000 Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) 2000 Capacitance C (pF) 1000 500 1000 Ciss di / dt = 100 A / µs VGS = 0, Ta = 25°C Coss 200 100 5 0.1 100 Crss V GS = 0 f = 1 MHz 10 0 0.2 0.5 1 2 5 10 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS Dynamic Input Characteristics 1000 ID =4A Drain to Source Voltage V DS (V) Gate to Source Voltage VGS (V) 800 VGS 600 V DS V DD = 600 V 400 400 V 250 V 200 V DD = 600 V 400 V 250 V 0 40 80 120 160 0 200 4 8 12 16 20 1000 500 Switching Characteristics td (off) Switching Time t (ns) 200 100 50 tr td (on) tf 20 VGS = 10 V, duty PW = 5 µ s 0.1 0.2 1% 10 0.05 0.5 1 2 5 Gate Charge Qg (nc) Drain Current I D (A) 6 2SK1835 Reverse Drain Current vs. Source to Drain Voltage 5 Pulse Test Reverse Drain Current I DR (A) 4 3 2 1 V GS = 15 V 0,–5 V 0 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Normalized Transien Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.02 1 sh ot P ulse 1.0 Tc = 25°C θ ch – c(t) = γ s(t) . θ ch – c θ ch – c = 1.0°C / W, Tc = 25°C PW D= T P DM T PW 0.03 0.01 10 µ 0.01 100 µ 1m 10 m Pulse Width PW (S) 100 m 1 10 7 2SK1835 Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vout Vin 10 V 50 Ω 10 % 10 % Vin 10 % 90 % Waveforms . . V DD = 30 V td (on) 90 % tr 90 % td (off) tf 8 Unit: mm 5.0 ± 0.3 15.6 ± 0.3 1.0 φ3.2 ± 0.2 4.8 ± 0.2 1.5 0.5 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 18.0 ± 0.5 1.0 ± 0.2 2.0 0.6 ± 0.2 3.6 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P — Conforms 5.0 g 0.3 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.