2SK1859

2SK1859 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low Drive Current No secondary breakdown Suitable for Switching regulator Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1859 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 900 ±30 6 15 6 60 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1859 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 900 ±30 — — 2.0 — 2.3 — — — — — — — — — Typ — — — — — 2.0 3.7 980 400 195 20 80 125 100 0.9 1000 Max — — ±10 250 3.0 3.0 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 6 A, VGS = 0 IF = 6 A, VGS = 0, diF / dt = 100 A / µs Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 720 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 3 A VGS = 10 V*1 ID = 3 A VDS = 20 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 3 A VGS = 10 V RL = 10 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr See characteristic curves of 2SK1341 3 2SK1859 Power vs. Temperature Derating 90 Channel Dissipation Pch (W) 50 30 Drain Current I D (A) 10 3 1 0.3 0.1 0.05 0 50 100 150 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Maximum Safe Operation Area 60 30 PW 1 m ion is n) = s at ea (o D 10 er ar DS C ps R m O hi y O s pe tb (1 in ed ra Sh it tio im ot n l ) (T c = 25 °C ) 10 µs 0 10 µs Ta = 25°C Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.01 θ ch – c(t) = γ s(t). θ ch – c θ ch – c = 2.08°C/W, Tc = 25°C PDM 0.03 0.01 10 µ 1S h ul ot P se PW T D= PW T 10 100 µ 1m 10 m 100 m 1 Pulse Width PW (S) 4 Unit: mm 5.0 ± 0.3 15.6 ± 0.3 φ3.2 + 0.4 – 0.2 5.5 ± 0.3 2.7 1.0 ± 0.2 5.45 ± 0.5 5.45 ± 0.5 21.0 ± 0.5 4.0 2.6 1.4 Max 5.0 19.9 ± 0.3 3.2 1.6 1.4 Max 0.6 ± 0.2 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3PFM — — 5.6 g Cautions 1. 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