2SK2220

2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • • • • • • • High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S 2SK2220, 2SK2221 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2220 2SK2221 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1. Value at Tc = 25 °C VGSS ID I DR Pch* Tch Tstg 1 Symbol VDSX Ratings 180 200 ±20 8 8 100 150 –55 to +150 Unit V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SK2220 2SK2221 V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss t on t off Symbol V(BR)DSX Min 180 200 ±20 0.15 — 0.7 — — — — — Typ — — — — — 1.0 600 800 8 250 90 Max — — — 1.45 12 1.4 — — — — — V V V S pF pF pF ns ns I G = ±100 µA, VDS = 0 I D = 100 mA VDS = 10 V I D = 8 A, VGD = 0 V*1 ID = 3 A VDS = 10 V*1 VGS = –5 V VDS = 10 V f = 1 MHz VDD = 30 V ID = 4 A Unit V Test conditions I D = 10 mA, VGS = –10 V Gate to source breakdown voltage Gate to source cutoff voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note 1. Pulse Test 2 2SK2220, 2SK2221 Power vs. Temperature Derating 150 Pch (W) 20 Ta = 25°C 10 Drain Current ID (A) PW = Maximum Safe Operation Area 100 PW 10 5 C D m = Channel Dissipation s 10 O pe ra tio (1 o Sh (1 0 s m 2 1.0 0.5 t) n = (T C o Sh t) 50 2SK2220 25 ) °C 2SK2221 0 50 100 Tc (°C) 150 0.2 5 10 20 50 100 200 500 Drain to Source Voltage VDS (V) Case Temperature Typical Output Characteristics 10 VGS = 10 V 9 8 7 Drain Current ID (A) 6 6 5 4 4 3 2 2 0 0 1 50 0 Pch = 125 W TC = 25°C 10 Typical Output Characteristics TC = 25°C 9 7 6 6 5 4 4 3 2 1 2 6 8 4 Drain to Source Voltage VDS (V) 0 10 VGS = 10 V 8 8 Drain Current ID (A) 8 2 10 30 40 20 Drain to Source Voltage VDS (V) 3 2SK2220, 2SK2221 Typical Transfer Characteristics 10 1.0 Typical Transfer Characteristics =– Drain Current ID (A) 25 Drain Current ID (A) 25 =– 0.4 0.2 °C 0.8 0.4 1.2 1.6 Gate to Source Voltage VGS (V) 8 25° VDS = 10 V C 0.8 75 VDS = 10 V TC 4 2 0 4 2 6 8 Gate to Source Voltage VGS (V) 10 T C 6 0.6 75 25 0 2.0 Forward Transfer Admittance vs. Frequency Forward Transfer Admittance yfs (S) 5 1.0 Switching Time t on, t off (ns) 500 Switching Time vs. Drain Current t on 200 100 50 0.1 TC = 25°C VDS = 10 V ID = 2 A t off 0.01 20 10 5 0.1 0.001 0.0005 2k 10 k 1M 100 k Frequency f (Hz) 10 M 20 M 0.2 2 0.5 1.0 Drain Current ID (A) 5 10 4 2SK2220, 2SK2221 Switching Time Test Circuit Output RL Input Input 10% t on PW = 50 µs duty ratio = 1% 30 V 50 Ω Output 90% t off 10% Waveforms 90% 5 Unit: mm 5.0 ± 0.3 15.6 ± 0.3 1.0 φ3.2 ± 0.2 4.8 ± 0.2 1.5 0.5 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 18.0 ± 0.5 1.0 ± 0.2 2.0 0.6 ± 0.2 3.6 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P — Conforms 5.0 g 0.3 Cautions 1. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.