2SK2729

2SK2729 Silicon N Channel MOS FET High Speed Power Switching ADE-208-455 A 2nd. Edition Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2729 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 500 ±30 20 80 20 20 22 150 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR* Pch* Tch Tstg 2 2SK2729 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 500 ±30 — — 2.5 — 9 — — — — — — — — — — — — Typ — — — — — 0.24 15 3300 900 120 55 14 17 45 140 150 85 1.0 400 Max — — ±10 10 3.5 0.29 — — — — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF nc nc nc ns ns ns ns V ns I D = 20A, VGS = 0 I F = 20A, VGS = 0 diF/ dt = 100A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±25V, VDS = 0 VDS = 500 V, VGS = 0 I D = 1mA, VDS = 10V*1 I D = 10A, VGS = 10V*1 I D = 10A, VDS = 10V*1 VDS = 10V VGS = 0 f = 1MHz VDD = 400V VGS = 10V I D = 20A VGS = 10V, ID = 10A RL = 3Ω Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance |yfs| Ciss Coss Reverse transfer capacitance Crss Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 3 2SK2729 Main Characteristics Power vs. Temperature Derating 200 Pch (W) Maximum Safe Operation Area 1000 I D (A) 300 100 30 10 3 150 Channel Dissipation Drain Current PW DC Op er 100 = 10 10 10 µs 0 1 m µs s ms 50 0 50 100 150 Tc (°C) 200 Case Temperature (1 sh ion ot) Operation in (T c= 1 this area is 25 limited by R DS(on) °C ) 0.3 Ta = 25 °C 0.1 30 1 10 100 300 1000 3 Drain to Source Voltage V DS (V) at Typical Output Characteristics 50 10 V 8V 50 Pulse Test 6.5 V 6V (A) 40 Typical Transfer Characteristics V DS = 10 V Pulse Test I D (A) 40 30 5.5 V 20 5V 4.5 V VGS = 4 V 0 10 20 30 Drain to Source Voltage 40 50 V DS (V) ID Drain Current 30 Drain Current 20 Tc = 75°C –25°C 25°C 2 4 6 Gate to Source Voltage 8 10 V GS (V) 10 10 0 4 2SK2729 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( Ω ) 10 Static Drain to Source on State Resistance vs. Drain Current 2 Pulse Test 1 8 6 I D = 20 A 0.5 VGS = 10 V, 15 V 0.2 4 10 A 2 5A 0 0.1 1 2 5 10 20 50 Drain Current I D (A) 100 12 4 8 Gate to Source Voltage 16 20 V GS (V) Static Drain to Source on State Resistance R DS(on) ( Ω) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 1.0 Pulse Test 0.8 I D = 20 A Forward Transfer Admittance vs. Drain Current 50 Tc = –25 °C 20 10 5 2 1 0.5 0.2 0.1 0.1 0.2 V DS = 10 V Pulse Test 2 0.5 1 5 10 20 Drain Current I D (A) 50 75 °C 25 °C 0.6 0.4 10 A V GS = 10 V 5A 0.2 0 –40 0 40 80 120 160 Case Temperature Tc (°C) 5 2SK2729 Body to Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 500 200 100 50 10000 5000 Typical Capacitance vs. Drain to Source Voltage Ciss Capacitance C (pF) 2000 1000 500 200 100 50 20 10 5 Coss 20 10 0.1 di / dt = 100 A / µs V GS = 0, Ta = 25 °C 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) VGS = 0 f = 1 MHz 0 10 20 30 Crss 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V GS (V) 500 VDS V DD = 100 V 250 V 400 V VGS 200 V DD = 400 V 250 V 100 V 8 20 1000 500 Switching Time t (ns) Switching Characteristics V GS = 10 V, V DD = 30 V PW = 10 µs, duty < 1 % t d(off) tf tr 400 16 Drain to Source Voltage 300 12 Gate to Source Voltage 200 100 50 t d(on) 20 10 0.1 100 I D = 20 A 4 0 20 40 60 80 Gate Charge Qg (nc) 0 100 0.3 1 3 Drain Current 10 30 I D (A) 100 6 2SK2729 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current I DR (A) Pulse Test Repetive Avalanche Energy E AR (mJ) 25 I AP = 20 A V DD = 50 V duty < 0.1 % Rg > 50 Ω Maximun Avalanche Energy vs. Channel Temperature Derating 40 20 30 5, 10 V V GS = 0 V 15 20 10 10 5 0 25 0 0.4 0.8 1.2 1.6 2.0 50 75 100 125 150 Source to Drain Voltage V SD (V) Channel Temperature Tch (°C) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 0.83 °C/W, Tc = 25 °C PDM PW T 0.03 0.02 1 lse 0.0 t pu o h 1s D= PW T 0.01 10 µ 100 µ 1m 10 m Pulse Width 100 m PW (S) 1 10 7 2SK2729 Avalanche Test Circuit EAR = Avalanche Waveform 1 2 • L • I AP • 2 VDSS VDSS – V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50 Ω 0 VDD Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 Ω V DD = 30 V Vout Monitor Switching Time Waveform 90% 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout 8 2SK2729 Package Dimentions Unit: mm 5.0 ± 0.3 φ 3.2 ± 0.2 0.5 typ 16.0 max 1.0 typ 5.0 max 1.5 typ 14.9 ± 0.2 2.0 typ 20.1 max 1.6 typ 1.4 max 2.0 typ 18.0 ± 0.5 2.8 typ 1.0 ± 0.2 3.6 typ 0.9 typ 1.0 typ 0.6 ± 0.2 0.3 typ 5.45 ± 0.2 5.45 ± 0.2 Hitachi Code EIAJ JEDEC TO–3P SC–65 — 9 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: (408) 433-1990 Fax: (408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.