2SK2795

2SK2795 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-466 A (Z) 2nd. Edition November. 1996 Features • • High power output, High gain, High effeciency PG = 11dB, Pout = 24dBm, ηD = 40 %min. (f = 836.5MHz) Compact package capable of surface mounting Outline UPAK 3 2 1 4 1. Gate 2. Source 3. Drain 4. Source This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. 2SK2795 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID ID(pulse)*1 Pch*2 Tch Tstg Ratings 10 ±6 0.17 0.3 1 150 –45 to +150 Unit V V A A W °C °C 1. PW ≤ 10ms, duty cycle ≤ 50 % 2. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Zero gate voltege drain current Gate to source leak current Symbol IDSS IGSS Min — — 0.3 — Typ — — — 9.5 Max 10 ±5.0 1.0 — Unit µA µA V pF Test Conditions VDS = 10 V, VGS = 0 VGS = ±6V, VDS = 0 ID = 1mA, VDS = 5V VGS = 2V, VDS = 0 f = 1MHz Output capacitance Coss — 4.5 — pF VDS = 5, VGS = o f = 1MHz Output Power Pout 24 — — dBm VDS = 4.7V f =836.5MHz Pin = 13dBm Drain Rational ηD 40 — — % VDS = 4.7V f =836.5MHz Pin = 13dBm Note: 3. Marking is “ DX “. Gate to source cutoff voltage VGS(off) Input capacitance Ciss 2SK2795 Main Characteristics Maximum Channel Power Dissipation Curve Pch (W) Typical Output Characteristics 1.0 6V 5V 0.8 4.5 V 4V 0.6 3.5 V 2.0 3V 2.5 V Channel Power Dissipation Drain Current 1.0 I D (A) 1.5 0.4 2V 0.5 0.2 Pulse Test 1.5 V V GS = 1 V 0 50 100 150 Tc (°C) 200 0 Case Temperature 2 3 4 5 6 1 Drain to Source Voltage V DS (V) Typical Transfer Characteristics V DS = 5 V Pulse Test (A) Forward Transfer Admittance |y fs | (S) 0.20 1 0.5 0.2 0.1 Forward Transfer Admittance vs. Drain Current 0.16 25°C Tc = –25°C ID Drain Current 0.12 Tc = –25°C 75°C 25°C 0.08 0.05 75°C 0.04 0.02 0.01 0.001 0.003 0.01 0.3 V DS = 5 V Pulse Test 0.1 0.3 1 0 0.4 0.8 1.2 1.6 V GS (V) 2.0 Gate to Source Voltage Drain Current I D (A) 2SK2795 Drain to Source Saturation Voltage vs. Drain Current 1.0 Gate to Source Cutoff Voltage VGS(off) (V) Drain to Source Saturation Voltage VDS(sat) (V) 10 3 1 Gate to Source Cutoff Voltage vs. Ambient Temperature 0.8 10 mA 1 mA 0.1 m A 25°C 75°C 0.6 ID= 0.3 0.1 Tc = –25°C V DS = 6 V Pulse Test 1 3 10 30 100 300 1000 0.4 0.03 0.01 0.2 0 –25 V DS = 5 V 0 25 50 75 100 125 Drain Current I D (mA) Ambient Temperature Ta (°C) Input Capacitance vs. Gate to Source Voltage 10 Output Capacitance Coss (pF) Input Capacitance Ciss (pF) Output Capacitance vs. Drain to Source Voltage 100 50 V GS = 0 f = 1 MHz 9 20 10 5 8 7 V DS = 0 f = 1 MHz 6 –6 –2 0 2 4 6 –4 Gate to Source Voltage VGS (V) 2 1 0.1 0.2 0.5 1 2 5 10 Drain to Source V DS (V) 2SK2795 Reverse Transfer Capacitance vs. Gate to Source Votage 100 500 V GS = 0 f = 1 MHz Output Power, Drain Rational vs. Input Power 100 Po ηD Reverse Transfer Capacitance Crss (pF) Output Power Po (mW) 50 20 10 5 300 60 200 V DS = 4.7 V I DO = 50 mA f = 836.5MHz 10 20 30 40 40 2 1 0.1 100 20 0 50 0.2 0.5 1 2 5 (V) 10 0 Gate to Source Voltege V GS Input power Pin (mW) Drain Rational η D (%) 400 80 2SK2795 Package Dimensions Unit: mm 4.5 ± 0.1 φ 1.0 1.5 1.5 3.0 0.8 min 0.53 max 0.48 max 1 2 3 2.5 ± 0.1 4.25 max 4 0.4 1.8 max 1.5 ± 0.1 0.44 max 0.44 max Hitachi Code EIAJ JEDEC UPAK SC–62 —