2SK2802

2SK2802 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-537C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0. 2 Ω typ. (VGS = 4 V, I D = 100 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK2802 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse) Pch Tch Tstg Note1 Note2 Ratings 30 ±10 0.5 1.0 150 150 –55 to +150 Unit V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min 30 ±10 — — 0.5 — — 0.7 — — — — — — — Typ — — — — — 0.2 0.3 1.2 14.0 68 3.0 0.27 1.5 2.2 2.15 Max — — 1.0 ±10 1.5 0.28 0.5 — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF µs µs µs µs Test Conditions I D = 100µA, VGS = 0 I G = ±100µA, VDS = 0 VDS = 30 V, VGS = 0 VGS = ±6.5V, VDS = 0 I D = 10µA, VDS = 5V I D = 100 mA VGS = 4V Note2 I D = 40 mA VGS = 2.5V Note2 I D = 250 mA VDS = 10V Note2 VDS = 10V VGS = 0 f = 1MHz VGS = 4V, ID = 250 mA RL = 40Ω Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance |yfs| Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Note: 2. Pulse test 3. Marking is “ZV–” t d(on) tr t d(off) tf 2 2SK2802 Main Characteristics Power vs. Temperature Derating 200 Pch (mW) I D (A) Maximum Safe Operation Area 1 ms 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 150 PW DC Channel Dissipation Drain Current 100 Op = (1 10 m sh s ot ) er at 50 Operation in this area is limited by R DS(on) ion 0 50 100 150 200 0.002 0.001 Ta = 25 °C 0.0005 0.05 0.1 0.2 0.5 1 2 5 10 20 50 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) 0.5 Typical Output Characteristics 4V 2V Typical Transfer Characteristics 0.5 25°C 75°C Tc = –25°C I D (A) 0.3 Pulse Test I D (A) Drain Current 0.4 1.8 V 0.4 0.3 Drain Current 0.2 1.6 V VGS = 1.4 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0.2 0.1 0.1 V DS = 10 V Pulse Test 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 3 2SK2802 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( W) 0.20 Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 2 1 0.5 0.16 0.12 0.08 VGS = 2.5 V 4V 0.2 0.1 0.04 I D = 0.2 A 0.1 A 6 2 4 Gate to Source Voltage 8 V GS (V) 10 0 0.05 0.1 0.2 Drain Current 0.5 I D (A) 1 Static Drain to Source on State Resistance R DS(on) ( W) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.5 I D = 0.1 A, 0.2 A 0.4 VGS = 2.5 V 0.3 Forward Transfer Admittance vs. Drain Current 5 2 1 0.5 25 °C 0.2 0.1 0.05 0.01 75 °C V DS = 10 V Pulse Test Tc = –25 °C 0.2 4V 0.1 0 –40 0.1 A, 0.2 A Pulse Test 0 40 80 120 160 Case Temperature Tc (°C) 0.02 0.05 0.1 0.2 Drain Current I D (A) 0.5 4 2SK2802 Typical Capacitance vs. Drain to Source Voltage 500 200 Capacitance C (pF) Switching Characteristics 10000 3000 Switching Time t (ns) VGS = 0 f = 1 MHz Coss t d(off) tf tr t d(on) 100 50 20 10 5 1000 300 100 30 10 0.05 Ciss Crss 2 1 0 4 8 12 16 20 Drain to Source Voltage V DS (V) V GS = 4 V, V DD = 10 V PW = 5 µs, duty < 1 % 0.1 0.2 Drain Current 0.5 I D (A) 1 Reverse Drain Current vs. Source to Drain Voltage 0.5 Reverse Drain Current I DR (A) 0.4 5V V GS = 0 0.3 0.2 0.1 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) 5 2SK2802 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 4V 50 W V DD = 10 V Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Waveform 90% 6 2SK2802 Package Dimensions Unit: mm + 0.1 – 0.3 0.65 0.4 + 0.10 – 0.05 0.16 + 0.10 – 0.06 + 0.2 – 0.6 1.5 0 ~ 0.15 0.95 1.9 0.95 + 0.3 2.8 – 0.1 0.3 0.65 1.1 – 0.1 + 0.2 + 0.1 – 0.3 2.8 MPAK Hitachi Code SC–59A EIAJ TO–236Mod. JEDEC 7 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.