2SK2939L

2SK2939(L),2SK2939(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-562D (Z) 5th. Edition Jun 1998 Features • Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D G 1 2 1 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2939(L),2SK2939(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 35 140 35 35 105 50 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50Ω 2 2SK2939(L),2SK2939(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min 60 ±20 — — 1.5 — — 14 — — — — — — — — — Typ — — — — — 0.020 0.032 23 1100 540 200 15 180 175 195 0.95 40 Max — — ±10 10 2.5 0.026 0.050 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 35A, VGS = 0 I F = 35A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1mA, VDS = 10V I D = 15A, VGS = 10VNote4 I D = 15A, VGS = 4V Note4 I D = 15A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz I D = 15A, VGS = 10V RL = 2Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK2939(L),2SK2939(S) Main Characteristics Power vs. Temperature Derating 80 Pch (W) I D (A) Maximum Safe Operation Area 200 100 10 0 10 PW D C O µs 60 50 20 10 5 2 1 0.5 Ta = 25 °C 1 = 10 m s( µs s m Drain Current Channel Dissipation 1s n tio ra pe 40 ho t) (T c= °C 25 ) 20 Operation in this area is limited by R DS(on) 0 50 100 150 200 0.2 0.1 0.3 1 3 10 30 (V) DS 100 Case Temperature Tc (°C) Drain to Source Voltage V Typical Output Characteristics 50 10 V 6V 5V 4.5 V Pulse Test 4V I D (A) Typical Transfer Characteristics 50 V DS = 10 V Pulse Test 40 I D (A) 40 30 3.5 V 20 VGS = 3 V 30 Tc = 75°C 25°C 20 –25°C Drain Current 10 Drain Current 10 0 2 4 6 Drain to Source Voltage V 8 (V) DS 10 0 1 2 3 Gate to Source Voltage V 4 (V) GS 5 4 2SK2939(L),2SK2939(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 0.8 Static Drain to Source on State Resistance vs. Drain Current Pulse Test 0.2 1.0 0.5 0.6 I D = 20A 10 A 0.2 5A 0 4 8 12 16 20 Drain to Source On State Resistance R DS(on) (W) Drain to Source Saturation Voltage V DS(on) (V) 0.1 0.4 0.05 VGS = 4 V 10 V 0.02 0.01 0.1 0.3 1 3 10 30 100 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) ( W) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0.08 50 20 10 5 2 1 0.5 0.1 Forward Transfer Admittance vs. Drain Current Tc = –25 °C 25 °C 75 °C 0.06 V GS = 4 V 20 A 5,10 A 0.04 0.02 0 –40 10 V 5, 10,20 A V DS = 10 V Pulse Test 0.3 1 3 10 30 Drain Current I D (A) 100 0 40 80 Case Temperature 120 160 Tc (°C) 5 2SK2939(L),2SK2939(S) Body–Drain Diode Reverse Recovery Time di / dt = 50 A / µs V GS = 0, Ta = 25 °C Typical Capacitance vs. Drain to Source Voltage 1000 5000 2000 Reverse Recovery Time trr (ns) 500 Capacitance C (pF) Ciss 1000 500 Coss 200 100 50 20 10 VGS = 0 f = 1 MHz 0 10 20 30 40 50 Crss 200 100 50 20 10 0.1 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics V DS (V) I D = 35 A V DD = 50 V 25 V 10 V V GS (V) 100 20 1000 80 16 Switching Time t (ns) 300 100 30 10 3 1 0.1 t d(off) tf tr t d(on) V GS = 10 V, V DD = 3 0 V PW = 5 µs, duty < 1 % 0.3 1 3 10 30 Drain Current I D (A) 100 Drain to Source Voltage 60 V DS V GS 40 12 8 20 V DD = 50 V 25 V 10 V 20 40 60 80 Gate Charge Qg (nc) 4 0 100 0 6 Gate to Source Voltage 2SK2939(L),2SK2939(S) Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy E AR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating 125 I AP = 35 A V DD = 25 V duty < 0.1 % Rg > 50 W 50 Reverse Drain Current I DR (A) 40 10 V 5V 100 30 V GS = 0, –5 V 75 20 50 10 Pluse Test 0 0.4 0.8 1.2 1.6 V SD (V) 2.0 Source to Drain Voltage 25 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Avalanche Test Circuit EAR = Avalanche Waveform 1 2 • L • I AP • 2 VDSS VDSS – V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50 W 0 VDD 7 2SK2939(L),2SK2939(S) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance g s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 q ch – c(t) = g s (t) • q ch – c q ch – c = 2.5 °C/W, Tc = 25 °C PDM PW T 0.03 0.02 1 lse 0.0 t pu o h 1s D= PW T 0.01 10 µ 100 µ 1m 100 m 10 m Pulse Width PW (S) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 W V DD = 30 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr 8 2SK2939(L),2SK2939(S) Package Dimentions Unit: mm (1.4) 10.2 ± 0.3 4.44 ± 0.2 1.3 ± 0.2 8.6 ± 0.3 10.0 +0.3 –0.5 11.3 ± 0.5 (1.4) 10.2 ± 0.3 4.44 ± 0.2 1.3 ± 0.2 (1.5) 11.0 ± 0.5 (1.5) 0.76 ± 0.1 (1.5) 8.6 ± 0.3 10.0 +0.3 –0.5 1.2 ± 0.2 0.86 +0.2 –0.1 1.27 ± 0.2 2.59 ± 0.2 0.1 +0.2 –0.1 3.0 +0.3 –0.5 1.27 ± 0.2 1.2 ± 0.2 2.54 ± 0.5 0.86 +0.2 –0.1 2.54 ± 0.5 2.59 ± 0.2 0.4 ± 0.1 0.4 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 L type S type Hitachi Code EIAJ JEDEC LDPAK — — 9 Cautions 1. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.