2SK3140

2SK3140 Silicon N Channel MOS FET High Speed Power Switching ADE-208-767C (Z) 4th. Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220CFM D G 12 3 S 1. Gate 2. Drain 3. Source 2SK3140 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR Pch Tch Tstg Note 3 Note 3 Note 2 Note 1 Ratings 60 ±20 60 240 60 50 214 35 150 –55 to +150 Unit V V A A A A mJ W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω 2 2SK3140 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS I GSS I DSS Min 60 — — 1.0 — — |yfs| Ciss Coss 45 — — — — — — — — — — — — Typ — — — — 6.0 8.0 75 7100 1000 280 125 25 25 60 250 540 320 1.0 80 Max — ±0.1 10 2.5 7.5 12 — — — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns I F = 60 A, VGS = 0 I F = 60 A, VGS = 0 diF/ dt = 50 A/ µs Test Conditions I D = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1 mA, VDS = 10 V Note 1 I D = 30 A, VGS = 10 V Note 1 I D = 30 A, VGS = 4 V Note 1 I D = 30 A, VDS = 10 V Note 1 VDS = 10 V VGS = 0 f = 1 MHz VDD = 25 V VGS = 10 V I D = 60 A VGS = 10 V, ID = 30 A RL = 1Ω Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Crss Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 1. Pulse test Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 3 2SK3140 Main Characteristics Power vs. Temperature Derating 40 Pch (W) Maximum Safe Operation Area 1000 I D (A) 300 100 30 10 3 1 0.3 DC Op 30 PW er ati 10 = 10 (T 10 0µ µs s 1m m s( s sh ot ) Channel Dissipation Drain Current 20 on 1 10 Operation in this area is limited by R DS(on) Ta = 25°C c= ) 25 °C 0 50 100 150 Tc (°C) 200 Case Temperature 0.1 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 100 VGS = 10 V 5V 4V 100 Pulse Test (A) I D (A) 80 3.5 V 80 V DS = 10 V Pulse Test 60 ID Drain Current 60 Drain Current 40 3V 20 2.5 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 40 25°C 75°C Tc = –25°C 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 20 4 2SK3140 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) (mΩ ) 2.0 Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 1.6 1.2 20 10 5 VGS = 4 V 10 V 0.8 0.4 10 A 0 I D = 50 A 20 A 16 20 V GS (V) 2 1 12 4 8 Gate to Source Voltage 1 2 5 10 20 50 100 200 Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) (mΩ ) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 I D = 50 A 12 4V 10, 20, 50 A VGS = 10 V 10 A 20 A Forward Transfer Admittance vs. Drain Current 500 200 100 50 20 10 5 2 1 0.5 0.1 0.3 1 3 10 30 Drain Current I D (A) 100 25 °C 75 °C Tc = –25 °C V DS = 10 V Pulse Test 8 4 0 –50 0 50 100 150 200 Case Temperature Tc (°C) 5 2SK3140 Body–Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 500 200 100 50 20 10 0.1 30000 VGS = 0 f = 1 MHz Capacitance C (pF) 10000 Ciss Typical Capacitance vs. Drain to Source Voltage 3000 1000 Coss di / dt = 50 A / µs V GS = 0, Ta = 25 °C 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 300 100 0 Crss 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V CE (V) V GE (V) 100 I D = 60 A V GS VDD = 50 V 25 V 10 V 20 1000 500 Switching Time t (ns) Switching Characteristics t d(off) 80 16 Collector to Emitter Voltage 60 V DS 40 12 Gate to Emitter Voltage 200 100 50 20 tf tr t d(on) 8 20 VDD = 50 V 25 V 10 V 80 160 240 320 Gate Charge Qg (nc) 4 0 400 V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % 50 100 0 10 2 5 10 20 0.1 0.2 0.5 1 Drain Current I D (A) 6 2SK3140 Reverse Drain Current vs. Source to Drain Voltage 100 (A) 10 V 80 Reverse Drain Current I F 5V Repetitive Avalanche Energy E AR (mJ) 250 I AP = 50 A V DD = 25 V duty < 0.1 % Rg > 50 Ω Maximum Avalanche Energy vs. Channel Temperature Derating 200 60 V GS = 0, –5 V 40 150 100 20 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 50 0 25 Source to Drain Voltage V SDF (V) 50 75 100 125 150 Channel Temperature Tch (°C) Avalanche Test Circuit EAR = Avalanche Waveform 1 2 • L • I AP • 2 VDSS VDSS – V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50 Ω 0 VDD 7 2SK3140 Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.02 1 lse 0.0 pu ot h 1s θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 3.57°C/ W, Tc = 25°C PDM PW T D= 0.03 PW T 0.01 10 µ 100 µ 1m 10 m 100 m Pulse Width PW (S) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 Ω V DD = 30 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr 8 2SK3140 Package Dimensions Unit: mm 10.0 ± 0.3 2.7 ± 0.2 φ 3.2 ± 0.2 0.6 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 4.1 ± 0.3 2.5 ± 0.2 0.7 ± 0.1 Hitachi Code TO–220CFM — EIAJ — JEDEC 13.6 ± 1.0 1.0 ± 0.2 1.15 ± 0.2 12.0 ± 0.3 4.5 ± 0.3 15.0 ± 0.3 9 2SK3140 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: (408) 433-1990 Fax: (408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 10