2SK3151

2SK3151 Silicon N Channel MOS FET High Speed Power Switching ADE-208-747A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS (on) = 11.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–3P D 2 1 G 1 3 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK3151 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 100 ±20 50 200 50 50 250 125 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min 100 ±20 — — 1.0 — — 30 — — — — — — — — — Typ — — — — — 11.5 16 50 4000 1650 590 30 280 830 450 0.95 100 Max — — ±10 10 2.5 15 25 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = 50 A, VGS = 0 I F = 50 A, VGS = 0 diF/ dt = 50 A/ µs Test Conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 25 A, VGS = 10 VNote4 I D = 25 A, VGS = 4 V Note4 I D = 25 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz I D = 25 A, VGS = 10 V RL = 1.2 Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2 2SK3151 Main Characteristics Power vs. Temperature Derating 160 Pch (W) Maximum Safe Operation Area 300 100 1000 300 100 30 10 3 1 DC I D (A) 120 10 PW Op er at 10 0 µs µs Channel Dissipation Drain Current 1 = 10 m m s( s s 80 40 n ho (T t) Operation in c= 25 this area is °C limited by R DS(on) ) io 1 Ta = 25°C 1 50 100 200 2 5 10 20 Drain to Source Voltage V DS (V) 0 50 100 150 Tc (°C) 200 Case Temperature Typical Output Characteristics Typical Transfer Characteristics 50 VGS = 10 V 4V 3V 30 3.5 V (A) 100 Pulse Test 80 V DS = 10 V Pulse Test I D (A) 40 ID Drain Current 60 Drain Current 20 2.5 V 10 2V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 40 75°C Tc = –25°C 20 25°C 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 3 2SK3151 Drain to Source Saturation Voltage vs. Gate to Source Voltage 1.0 Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 VGS = 4 V 0.8 I D = 50 A 0.6 Drain to Source On State Resistance R DS(on) (mΩ ) 20 10 0.4 20 A 0.2 10 A 10 V 5 2 1 0 0 12 4 8 Gate to Source Voltage 16 20 V GS (V) 1 2 5 10 20 50 100 200 Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) (mΩ ) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test 40 10,20 A 30 I D = 50 A 50 A 20 4V 10,20 A 10 0 –50 VGS = 10 V Forward Transfer Admittance vs. Drain Current 500 200 100 50 20 10 5 2 1 0.5 0.1 0.3 1 3 10 30 Drain Current I D (A) 100 75 °C Tc = –25 °C 25 °C V DS = 10 V Pulse Test 0 50 100 150 200 Case Temperature Tc (°C) 4 2SK3151 Body–Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) Typical Capacitance vs. Drain to Source Voltage 30000 VGS = 0 f = 1 MHz Capacitance C (pF) 500 200 100 50 20 10 0.1 10000 Ciss 3000 1000 Coss Crss di / dt = 50 A / µs V GS = 0, Ta = 25°C 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 300 100 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V GE (V) 200 I D = 50 A V DD = 100 V 50 V 25 V V DS V GS 20 5000 Switching Characteristics Switching Time t (ns) 160 16 1000 500 200 100 50 20 10 0.1 0.2 t d(off) tf tr Collector to Emitter Voltage 120 12 80 8 Gate to Emitter Voltage t d(on) V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1% 0.5 1 2 5 10 20 I D (A) 50 Drain Current 40 V DD = 100 V 50 V 25 V 80 160 240 320 Gate Charge Qg (nc) 4 0 400 0 5 2SK3151 Reverse Drain Current vs. Source to Drain Voltage 50 (A) Repetitive Avalanche Energy E AR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating 250 I AP = 50 A V DD = 50 V duty < 0.1 % Rg > 50 Ω 10 V 40 200 Reverse Drain Current I F 30 V GS = 0, –5 V 20 5V 150 100 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 50 0 25 Source to Drain Voltage V SDF (V) 50 75 100 125 150 Channel Temperature Tch (°C) Avalanche Test Circuit EAR = Avalanche Waveform 1 2 • L • I AP • 2 VDSS VDSS – V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50 Ω 0 VDD 6 2SK3151 Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 1.0°C/W, Tc = 25 °C PDM PW T 0.03 0.02 1 lse 0.0 t pu o h 1s D= PW T 0.01 10 µ 100 µ 1m 10 m Pulse Width 100 m PW (S) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 Ω V DD = 30 V Vout 10% Vout Monitor Waveform 90% 10% 90% 90% td(off) 10% td(on) tr tf 7 2SK3151 Package Dimensions Unit: mm φ 3.2 ± 0.2 0.5 typ 16.0 max 1.0 typ 5.0 ± 0.3 5.0 max 1.5 typ 14.9 ± 0.2 2.0 typ 20.1 max 1.6 typ 1.4 max 2.0 typ 18.0 ± 0.5 2.8 typ 1.0 ± 0.2 3.6 typ 0.9 typ 1.0 typ 0.6 ± 0.2 0.3 typ 5.45 ± 0.2 5.45 ± 0.2 Hitachi Code EIAJ JEDEC TO–3P SC–65 — 8 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: (408) 433-1990 Fax: (408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.