2SK3212

2SK3212 Silicon N Channel MOS FET High Speed Power Switching ADE-208-752 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G 12 S 1. Gate 2. Drain 3. Source 3 2SK3212 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 100 ±20 10 40 10 10 10 20 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min 100 ±20 — — 1.0 — — 4.5 — — — — — — — — — Typ — — — — — 100 130 7.5 420 185 100 12 60 105 70 0.9 90 Max — — ±10 10 2.5 130 180 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = 10 A, VGS = 0 I F = 10 A, VGS = 0 diF/ dt = 50 A/ µs Test Conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 5 A, VGS = 10 VNote4 I D = 5 A, VGS = 4 V Note4 I D = 5 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz I D = 5 A, VGS = 10 V RL = 10 Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2 2SK3212 Main Characteristics Power vs. Temperature Derating 40 100 50 Maximum Safe Operation Area Pch (W) I D (A) 30 20 10 5 2 1 0.5 0.2 DC 10 PW Op er 10 =1 ion 0 µs 1 0 m s( m µs Channel Dissipation 20 Drain Current s t) at 1s ho (T 10 25 Operation in °C ) this area is limited by R DS(on) c= 0 0.1 50 100 150 Tc (°C) 200 Case Temperature Ta = 25 °C 1 2 5 10 20 Drain to Source Voltage 50 100 200 V DS (V) Typical Output Characteristics 10 10 V 10 Pulse Test 3.5 V 6V 6 4V Typical Transfer Characteristics V DS = 10 V Pulse Test I D (A) ID 3V (A) Drain Current 8 8 6 Drain Current 4 4 Tc = 75°C –25°C 25°C 2 VGS =2.5 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 2 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 3 2SK3212 Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 500 Pulse Test 200 100 10 V 50 VGS = 4 V Drain to Source Saturation Voltage V DS(on) (V) Pulse Test 2.0 1.5 1.0 ID=5A 2A 0 12 4 8 Gate to Source Voltage 1A 16 20 V GS (V) 0.5 Drain to Source On State Resistance R DS(on) (mΩ ) 2.5 20 10 0.1 0.2 0.5 1 2 5 10 20 Drain Current I D (A) 50 Static Drain to Source on State Resistance R DS(on) ( mΩ) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 500 Pulse Test 400 1, 2 A 300 5A 200 V GS = 4 V Forward Transfer Admittance vs. Drain Current 50 20 Tc = –25 °C 10 5 75 °C 2 1 0.5 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 Drain Current I D (A) 100 25 °C 100 10 V 0 –40 5A 1, 2 A 0 40 80 120 160 Case Temperature Tc (°C) 4 2SK3212 Body–Drain Diode Reverse Recovery Time 1000 5000 di / dt = 50 A / µs V GS = 0, Ta = 25 °C 2000 1000 500 200 100 50 20 10 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 0 VGS = 0 f = 1 MHz 10 20 30 40 50 Coss Crss Ciss Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) 200 100 50 20 10 0.1 Capacitance C (pF) 500 Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics V DS (V) ID=5A V DD = 100 V 50 V 25 V V GS V GS (V) 200 20 500 300 Switching Time t (ns) 160 16 t d(off) 100 tf 30 10 t d(on) 3 1 0.1 V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % 0.3 3 1 Drain Current 10 I D (A) 30 100 tr Drain to Source Voltage 120 12 80 8 40 V DD = 100 V 50 V 25 V 4 V DS 0 40 0 8 16 24 32 Gate Charge Qg (nc) Gate to Source Voltage 5 2SK3212 Reverse Drain Current vs. Source to Drain Voltage Repetive Avalanche Energy E AR (mJ) Maximun Avalanche Energy vs. Channel Temperature Derating 10 I AP = 10 A V DD = 50 V duty < 0.1 % Rg > 50 Ω 10 Reverse Drain Current I DR (A) 8 8 6 10 V 6 4 5V V GS = 0, –5 V 4 2 2 0 25 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) 50 75 100 125 150 Channel Temperature Tch (°C) Avalanche Test Circuit Avalanche Waveform VDSS VDSS – V DD V DS Monitor L I AP Monitor EAR = 1 2 • L • I AP • 2 V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50 Ω 0 VDD 6 2SK3212 Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.02 1 0.0 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 6.25 °C/W, Tc = 25°C PDM D= PW T 0.03 PW T 0.01 10 µ 1s h p ot uls e 100 µ 1m 10 m 100 m Pulse Width PW (S) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 Ω V DD = 30 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr 7 2SK3212 Package Dimensions Unit: mm 10.0 ± 0.3 7.0 ± 0.3 φ 3.2 ± 0.2 2.8 ± 0.2 2.5 ± 0.2 2.0 ± 0.3 5.0 ± 0.3 2.7 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Hitachi Code TO–220FM SC–67 EIAJ — JEDEC 8 14.0 ± 1.0 1.2 ± 0.2 1.4 ± 0.2 12.0 ± 0.3 4.45 ± 0.3 17.0 ± 0.3 0.6 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. 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Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: (408) 433-1990 Fax: (408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.