2SK3233

2SK3233 Silicon N Channel MOS FET High Speed Power Switching ADE-208-1369 (Z) 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on) = 1.1 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A) Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A) Avalanche ratings Outline TO–220CFM D G 12 3 1. Gate 2. Drain 3. Source S 2SK3233 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Tehrmal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID Note1 (pulse) Ratings 500 ±30 5 20 5 Unit V V A A A A A W °C/W °C °C I DR I DR I AP Note1 (pulse) 20 5 30 4.17 150 –55 to +150 Note3 Note2 Pch θ ch-c Tch Tstg 2 2SK3233 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS I GSS 500 — — 3.0 — 3.0 — — — — — — — — — — — — — Typ — — — — 1.1 4.5 580 70 13 20 15 65 15 15 3 8 0.85 400 1.5 Max — ±0.1 1 4.0 1.5 — — — — — — — — — — — 1.3 — — Unit V µA µA V Ω S pF pF pF ns ns ns ns nC nC nC V ns µC Test Conditions I D = 10 mA, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 500 V, VGS = 0 VDS = 10 V, ID = 1 mA I D = 2.5 A, VGS = 10 V Note4 I D = 2.5 A, VDS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz I D = 2.5 A VGS = 10 V RL = 100 Ω Rg = 10 Ω VDD = 400 V VGS = 10 V ID = 5 A I F = 5 A, VGS = 0 I F = 5 A, VGS = 0 diF/dt = 100 A/µs Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note: 4. Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr 3 2SK3233 Main Characteristics Power vs. Temperature Derating 40 Channel Dissipation Pch (W) ID (A) 100 30 30 10 3 1 0.3 Operation in Maximum Safe Operation Area 10 10 PW DC Op er Drain Current = 1m 10 m s( 1s 0µ µs s s 20 at ion (T ho ) c= t) 10 0.1 this area is 0.03 0.01 limited by RDS(on) 25 °C Ta = 25°C 1 30 3 10 100 300 1000 Drain to Source Voltage VDS (V) 0 50 100 150 Tc (°C) 200 Case Temperature Typical Output Characteristics 10 Pulse Test 8V 10 V ID (A) 6V 5.5 V 10 Typical Transfer Characteristics V DS = 10 V 8 Pulse Test ID (A) 8 6 Drain Current 5V Drain Current 6 4 4 Tc = 75°C 25°C –25°C 2 4 6 Gate to Source Voltage 8 10 VGS (V) 2 4.5 V VGS = 4V 2 0 10 20 30 Drain to Source Voltage 40 50 VDS (V) 0 4 2SK3233 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (V) Pulse Test Drain to Source on State Resistance RDS(on) (Ω) 20 Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 2 1 VGS = 10 V, 15 V 16 12 8 ID=5A 0.5 4 2A 1A 6 2 4 Gate to Source Voltage 8 VGS (V) 10 0.2 0 0.1 0.1 0.2 0.5 1 2 Drain Current 5 10 20 ID (A) 50 Static Drain to Source on State Resistance RDS(on) (Ω) Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 5 Pulse Test 4 V GS = 10 V Forward Transfer Admittance vs. Drain Current 50 20 10 5 2 1 0.5 0.2 0.1 0.1 0.2 0.5 1 2 V DS = 10 V Pulse Test 5 10 20 50 Drain Current ID (A) 25°C 75°C Tc = –25°C 3 ID=5A 2 2A 1 0 –40 1A 0 40 80 120 Case Temperature Tc (°C) 160 5 2SK3233 Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 500 Capacitance C (pF) 200 100 50 5000 2000 1000 500 200 100 50 20 10 5 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss Coss 20 10 0.1 di / dt = 100 A / µs V GS = 0, Ta = 25°C 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) Crss 0 50 100 150 200 VDS (V) 250 Drain to Source Voltage Dynamic Input Characteristics VDS (V) VGS (V) 1000 I D= 5 A VGS V DD = 100 V 250 V 400 V VDS 20 1000 500 Switching Time t (ns) Switching Characteristics V GS = 10 V, V DD = 250 V PW = 10 µs, duty < 1 % R G =10 Ω 800 16 Gate to Source Voltage Drain to Source Voltage 200 100 50 20 10 0.1 t d(on) tr 0.3 1 3 Drain Current 10 30 ID (A) 100 tf t d(off) 600 12 400 8 200 V DD = 400 V 250 V 100 V 10 20 30 40 4 0 50 0 Gate Charge Qg (nC) 6 2SK3233 Reverse Drain Current vs. Source to Drain Voltage 10 IDR (A) Gate to Source Cutoff Voltage VGS(off) (V) 5 Gate to Source Cutoff Voltage vs. Case Temperature V DS = 10 V 8 5, 10 V 6 V GS = 0 V 4 I D = 10mA 3 1mA 0.1mA 2 Reverse Drain Current 4 2 Pulse Test 0 0.4 0.8 1.2 1.6 VSD (V) 2.0 Source to Drain Voltage 1 0 -50 0 50 100 150 Case Temperature Tc (°C) 200 Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Ω Vin 10 V V DD = 250 V Vin Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr 7 2SK3233 Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 Normalized Transient Thermal Impedance γ s (t) D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.03 0.02 1 0.0 tp ul se 0.01 ho θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 4.17°C/W, Tc = 25°C PDM PW T 0.003 0.001 10 µ 1s D= PW T 100 µ 1m 10 m Pulse Width PW (s) 100 m 1 10 8 2SK3233 Package Dimensions As of January, 2001 Unit: mm 10.0 ± 0.3 φ 3.2 ± 0.2 4.5 ± 0.3 2.7 ± 0.2 15.0 ± 0.3 2.5 ± 0.2 0.7 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 0.6 ± 0.1 2.54 2.54 4.1 ± 0.3 13.60 ± 1.0 1.0 ± 0.2 1.15 ± 0.2 12.0 ± 0.3 TO-220CFM — — 1.9 g 9 2SK3233 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. 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