2SK973L

2SK973 L , 2SK973 S Silicon N-Channel MOS FET Application DPAK-1 4 4 High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2, 4 12 3 12 3 S type 1. Gate 2. Drain 3. Source 4. Drain 3 L type 1 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature * ** PW ≤ 10 µs, duty cycle ≤ 1 % Value at TC = 25 °C Symbol VDSS VGSS ID ID(peak)* IDR Pch** Tch Tstg Ratings 60 ±20 2 8 2 10 150 –55 to +150 Unit V V A A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— 2SK973 L , 2SK973 S Table 2 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 60 Typ — Max — Unit V Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 1 A, VGS = 10 V * ——————————————————————————————————————————— ——————————————————————————————————————————— ±20 — — V ——————————————————————————————————————————— — — 1.0 — — — — 0.25 0.40 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 1.2 — — — — — — — — 2.0 240 115 35 4 15 80 40 1.0 ±10 100 2.0 0.35 0.50 — — — — — — — — — S pF pF pF ns ns ns ns V IF = 2 A, VGS = 0 IF = 2 A, VGS = 0, diF/dt = 50 A/µs ID = 1 A, VGS = 10 V, RL = 30 Ω µA µA V Ω ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————— ——————————– ID = 1 A, VGS = 4 V * ID = 1 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz ——————————————————————————————————————————— ——————————————————————————————————————————— ———————————————————————————————— ———————————————————————————————— ——————————————————————————————————————————— ———————————————————————————————— ———————————————————————————————— ———————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— — 70 — ns ——————————————————————————————————————————— 2SK973 L , 2SK973 S Power vs. Temperature Derating 15 Channel Dissipation Pch (W) 50 30 Drain Current ID (A) 10 Maximum Safe Operation Area 10 5 t o in S ( n RD tio ra by pe ited 1.0 O lim s hi e ar a is 10 µs n) 10 3 PW 0 µs DC = 1 m s( 1 Op 10 s m Sh ot ) er ati on 0.3 0.1 Ta = 25°C (T C = 25 °C ) 0 50 100 150 0.05 0.1 Case Temperature TC (°C) 0.3 1.0 3 10 30 100 Drain to Source Voltage VDS (V) Typical Output Characteristics 5 10 V 5V 4V 3.5 V Pulse Test 5 Typical Transfer Characteristics –25°C 4 Drain Current ID (A) VDS = 10 V Pulse Test 75°C TC= 25°C 4 Drain Current ID (A) 3 3V 3 2 2 1 2.5 V VGS = 2 V 1 0 6 2 4 8 10 Drain to Source Voltage VDS (V) 0 3 1 2 4 Gate to Source Voltage VGS (V) 5 2SK973 L , 2SK973 S Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) (Ω) 2.0 Drain to Source Saturation Voltage VDS (on) (V) 1.6 5A 1.2 Pulse Test 5 Static Drain to Source on State Resistance vs. Drain Current Pulse Test 2 1.0 0.5 10 V 0.2 0.1 0.05 0.2 VGS = 4 V 0.8 2A 0.4 ID = 1 A 0 6 2 4 8 10 Gate to Source Voltage VGS (V) 0.5 1.0 5 2 10 Drain Current ID (A) 20 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) (Ω) Pulse Test Forward Transfer Admittance yfs (S) 1.0 10 5 Forward Transfer Admittance vs. Drain Current VDS = 10 V –25°C Pulse Test TC = 25°C 0.8 ID = 2 A 0.6 VGS = 4 V 0.4 5A 0.2 VGS = 10 V 1 A, 2 A 1A 2 1.0 0.5 75°C 0.2 0.1 0.05 0 –40 0 40 120 80 Case Temperature TC (°C) 160 0.1 0.2 2 0.5 1.0 Drain Current ID (A) 5 2SK973 L , 2SK973 S Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) di/dt = 50 A/µs, Ta = 25°C VGS = 0 Pulse Test 1000 300 Capacitance C (pF) 100 30 10 3 1 0.5 1.0 2 5 10 Reverse Drain Current IDR (A) 20 0 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss Coss 200 100 50 Crss 20 10 5 0.2 10 20 50 30 40 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 100 Drain to Source Voltage VDS (V) 80 VDD = 50 V 25 V 60 VDS 40 20 VDD = 50 V 25 V 10 V 2 VGS ID = 2 A 8 4 10 V 12 20 Gate to Source Voltage VGS (V) 16 100 Switching Characteristics td (off) 50 Switching Time t (ns) tf 20 tr 10 5 td (on) 2 1 0.05 VGS = 10 V PW = 2µs, duty < 1 % 0.1 0.5 1.0 0.2 2 Drain Current ID (A) 5 0 4 6 8 Gate Charge Qg (nc) 0 10 2SK973 L , 2SK973 S Reverse Drain Current vs. Source to Drain Voltage 5 Reverse Drain Current IDR (A) 4 Pulse Test 3 10 V 15 V 2 5V 1 VGS = 0, –5 V 0 0.8 0.4 1.2 2.0 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 TC = 25°C 1.0 0.2 0.1 0.05 0.02 lse 0.01 ot Pu h 1S θch–c(t) = γS (t) · θch–c θch–c = 12.5°C/W, TC = 25°C PDM PW 1 D = PW T 10 0.03 0.01 10 µ T 1m 10 m Pulse Width PW (s) 100 m 100 µ 2SK973 L , 2SK973 S Switching Time Test Circuit Vin Monitor Wavewforms 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 90 % tr 90 % td (off) 10 % 50 Ω Vin = 10 V . VDD = 30 V . td (on) tf